• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.293-293
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• 2013

최근 디스플레이산업이 발달하면서 투명전도성 물질에 대한 산업의 요구도가 높아지고 있다. ITO투명전도성 박막은 낮은 비저항과 우수한 식각특성을 가지고 있어 평면표시소자, 광소자, 터치패널 그리고 가스 센서 등 다양한 분야에 응용되고 있으며 디스플레이 소자가 소형화 되어감에 따라 박막의 다기능화가 요구되고 있다. 본 실험에서는 전기적 특성과 친, 발수특성을 동시에 가지는 다기능성 ITO 박막을 연구하였다. RIE방식으로 식각을 통하여 Poly Si-wafer 표면에 미세구조를 만든 기판과 Slide Glass기판에 RF-magnetron sputtering 방법을 이용해 ITO박막을 증착하여 비교분석 하였다. ITO박막 증착시 $100{\sim}400^{\circ}C$ 열처리와 산소를 사용하지 않고 Ar 가스만을 사용하여 실험한 후 열처리온도에 따른 전기적 특성 및 접촉각에 대하여 조사하였다. 3 uL의 Di-water를 사용하여 접촉각을 측정한 결과 $400^{\circ}C$ 열처리가 된 Poly si-wafer 위에 증착된 ITO 박막에서 초-친수 특성을 나타냈으며, 그 위에 PTFE을 증착하였을 경우 12 uL의 Di-water를 사용하여 약 $150^{\circ}$ 이상의 초-발수 특성을 나타내었다. 전기적 특성은 $5.8{\times}10^{-4}$의 비 저항을 나타내었다. 이러한 전기적 특성과 친 발수 특성을 동시에 가지는 ITO 박막은 Anti-Fogging, self-Cleaning, Solar cell 및 디스플레이소자 등 다양한 산업에 이용 가능할 것으로 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.389-389
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• 2011

Transparent conductive oxide (TCO) 박막은 디스플레이 및 태양전지 등 광범위한 분야에서 적용되고 있으며, 특히 indium tin oxide (ITO)는 낮은 전기적 저항과 우수한 광투과도를 가지고 있어서 이미 많은 분야에 적용되고 있다. 본 연구는 RF와 DC를 혼용한 마그네트론 스퍼터링 공정을 활용하여 ITO 박막 특성 및 이를 활용한 유기태양전지 적용에 관한 것이다. UV-O3 처리된 glass 기판위에 thermal evaporation 방식으로 밀착력을 높이기 위하여 Cr을 5 nm 두께로 증착한 후 Al을 95 nm 증착하였다. 그 위에 스퍼터링 공정으로 ITO 박막을 In2O3:SnO2 target (10wt% SnO2)을 사용하여 1.0 mTorr의 공정압력(Ar:O2=30:1), 50W의 RF power 및 0.11kW의 DC power에서 50~250 nm의 두께로 증착하였다. ITO 박막의 결정구조 및 표면 형상은 x-ray diffraction (XRD) 및 scanning electron microscope (SEM)을 사용하여 분석하였으며, 전기적 특성은 four-point probe법으로 비저항값을 측정하였다. 또한 높은 광변환효율을 가지는 태양전지 제작을 위하여, 다양한 두께의 ITO 박막을 사용하여 ITO/ZnO/P3HT:PCBM/PEDOT/Ag 구조의 유기태양전지를 제작하여 소자 특성을 최적화 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.329-329
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• 2013

본 연구에서는 PEDOT:PSS와 crystalline-ITO (c-ITO) 박막 계면에서의 화학적 반응을(박리 및 용해 특성)을 관찰하기위해 spin-coating 및 droplet dropping을 통하여 PEDOT:PSS 용액을 코팅하고 이후 화학적 거동에 따른 전기적, 광학적 및 구조적 특성 변화를 관찰하였다. 강산성을 띄는 PEDOT:PSS (Al 4083) 박막의 코팅 전, 0.4T sodalime glass 위에 열처리를 통하여 성막된 c-ITO 투명전극을 15분 동안 상압 오존 공정을 통하여 계면처리함으로써 다른 변수의 영향을 배제하였으며, 표면 처리 후 spin-coating 및 droplet dropping method를 통하여 PEDOT:PSS를 코팅하여 c-ITO와 PEDOT:PSS 계면사이의 화학적 반응의 영향을 시간 경과에 따라 분석하였다. PEDOT:PSS 코팅 후 솔밴트 제거를 위해 hot plate를 이용하여 $110^{\circ}C$로 열처리되었다. Spin-coating 방법과는 달리 droplet dropping 방법을 통해 형성된 c-ITO 투명전극/PEDOT:PSS 계면에서는 spin coating에서 적용된 동일한 공정변수적용에도 불구하고 PEDOT:PSS의 산성으로 인한 ITO 투명전극 표면에서의 화학적 조성변화가(In, Sn, O의 조성의 변화) 발생됨을 x-ray photoelectron spectroscopy 결과를 통해 확인하였다. 뿐만 아니라 계면 조성반응 변화에 따른 전기적 특성 및 광학적 투과율의 열화가 발생됨을 Hall measurement 측정과 UV/Vis spectrometer 결과를 통하여 도출하였다. 본 결과를 통해 c-ITO/PEDOT:PSS 사이에서 발생되는 내산특성/계면 화학변화가 유기태양전지에서의 산화물 투명전극과 유기물 계면 열화현상에 영향을 받을 수 있음을 나타낸다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.28-28
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• 2008

We have demonstrated the combinatorial synthesis of a variety of transparent conducting oxides using a combinatorial sputter system. The effects of a wide range of Nb or Zn doping rate on the optical and electrical properties of Indium-tin oxides (ITO) films were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates, using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and $Nb_2O_5$ or ITO and ZnO. We have examined the work-function, resistivity, and optical properties of the Nb or Zn-doped ITO films. Furthermore, the effects of Hz plasma treatment on the physical properties of Ga or Zn doped ITO films synthesized by combinatorial sputter system were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.850-853
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• 2009

We have optimized the device structure by using the dielectric layer such as anti-reflection thin film to improve the emitting efficiency of white organic light emitting device (WOLED). Basically, dielectric layer with anti-reflection characteristics can enhance the emitting efficiency of WOLED by compensating the refractive index of organic layer, ITO, and Glass. Here, WOLED was designed and optimized by Macleod simulator. The refractive index of 1.74 was calculated for Dielectric layer and was selected as $TiO_2$. The optimal thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively, at the wavelength of 600 nm. The transmittance of ITO was measured with the thickness variation of dielectric layer and ITO in Organic layer/ITO/Dielectric layer structure. The transmittance of ITO was 95.17% and thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively. This result, calculated and measured values were coincided.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.71-75
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• 2018

In this study, we prepared OLED cell with ITO (Indium Tin Oxide) films grown on the glass substrate by facing targets sputtering. Before fabrication of OLED cells, we investigated properties of ITO films deposited at various sputtering conditions. To investigate properties of as-prepared films, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), hall-effect measurement. As a results, as-prepared ITO films have high transmittance of over 85 % in the visible range (300-800 nm) and a resistivity of under $10^{-4}$ (${\Omega}-cm$). Their resistivity increased as a function of oxygen gas flow and substrate temperature. OLED cell with ITO films were fabricated by thermal evpoeartor. Properties of OLEDs cell referring to properties of ITO films.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.47-47
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• 1994

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.108-110
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• 2009

Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.