• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.20-23
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• 2008

Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1869-1873
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• 2008

In this work, to make it possible to generate glow discharge in atmospheric pressure condition with relatively high and wide electric field, micro channel reactor is proposed. Si DRIE and Cr deposition by Ebeam evaporation is used to make channel and bottom electrode layer. Upper electrode is made from ITO glass to visualize discharge within micro channel. Fabricated reactor is verified by generating uniform glow plasma with N2 / He gases each as working fluid. The range of gas electric field to generate glow plasma is from about 200 V/cm and upper limit is not observed in tested condition of up to 150 kV/cm. This data shows that micro channel plasma reactor is more versatile. Indirect estimation of electron temperature in this reactor can be inferred that the electron temperature within glow discharge in micro reactor lies $0{\sim}2eV$. This research demonstrates that the reactor is appropriate in application that needs to maintain low temperature condition during chemical process.

• Journal of the Korean Applied Science and Technology
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• v.16 no.3
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• pp.249-254
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• 1999

The N-docosyl N'-methyl viologen-$(TCNQ)_2$, (DMVT) was synthesized. We investigated the ${\pi}-A$ isotherm of DMVT to find the optimal deposition condition. Temperature-dependent current-voltage characteristics of the DMVT LB films shows that there is an increase in conductivity at 330K or so. The in-plane electrical conductivity at room temperature is in the range of $10^{-7}{\sim}10^{-6}S/cm$. From the plot of logarithmic conductivity as a function of reciprocal temperature, two types of activation energies, 0.04eV and 0.73eV, were obtained depending on the temperature range. The Ohmic behaviour was observed below 0.6V and the Schottky effect was confirmed at $2.5{\sim}6V$, when the I-V characteristics was measured with Al/LB film/Al structure. I-V measurement for Al/LB film/ITO structure showed the asymmetrical I-V relationship, which resulted from the rectification property.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.469.2-469.2
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• 2014

All-solid-state solar cell based on Chloride doped organometallic halide perovskite, (CH3NH3)PbIxCl3-x, has achieved a highly power conversion efficiency (PCE) to over 15% [1] and further improvements are expected up to 20% [2]. In this way, solar cells using novel light absorbing perovskite material are actively being studied as a next generation solar cells. However, making solution-process require high temperature up to $500^{\circ}C$ to form compact hole blocking layer and sinter the mesoporous oxide scaffold layer. Because of this high temperature process, fabrication of flexible solar cells on plastic substrate is still troubleshooting. In this study, we fabricated highly efficient flexible perovskite solar cells with PCE in excess of 11%. Atomic layer deposition (ALD) is used to deposit dense $TiO_2$ as hole blocking layer on ITO/PEN substrate. The all fabrication process is done at low temperature below $150^{\circ}C$. This work shows that one of the important blueprint for commercial use of perovskite solar cells.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.930-937
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• 1997

Polycrystalline CdTe thin films have been studied for photovoltaic application because of their high absorption coefficient and optimal band energy(1.45 eV) for solar energy conversion. In this study CdTe thin films were deposited on CdS(chemical bath deposition)/ITO(indium tin oxide) substrate by rf-magnetron sputtering under various conditions. Structural optical and electrical properties are investigated with XRD UV-Visible spectrophotometer SEM and solar simulator respectively. The fabricated CdTe/CdS solar cell exhibited open circuit voltage( $V_{oc}$ ) of 610 mV short circuit current density( $J_{sc}$ ) of 17.2 mA/c $m^2$and conversion efficiency of about 5% at optimal sputtering conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.541-544
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• 2004

Multi- wall carbon nanotubes(MWNTs) were synthesized by thermal chemical vapor deposition. The paste for screen printing was composed of MWNTs, organic vehicle and glass frit. Carton nanotube paste was screen-printed on ITO(indium tin oxide) deposited soda lim을 glass, and then heat treatment was performed. Before the surface treatment, turn on field of derive was 2.6 V/$\mu\textrm{m}$. After the surface treatment, the value was changed into 1.8 V/$\mu\textrm{m}$. The anode current of the derive with 2.83 V/$\mu\textrm{m}$(turn on field) was changed 4 $\mu\textrm{A}$ into 390 $\mu\textrm{A}$ at 1,700 V. Adsorption effect of MWNTs onto phosphor of anode plate was observed by the field emission measurement and resulted in bad effects on properties of devices lifetime and emission lighting.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.101-101
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• 2011

투명전도성산화물(transparent conducting oxides, TCOs) 박막으로써 널리 쓰이는 산화인듐주석(indium tin oxide, ITO)은 전기 전도성과 광 투과성이 우수하여 주로 유기발광다이오드(organic light-emitting diode, OLED)의 전극, 발광다이오드(light-emitting diode, LED)의 current spreading 층 및 태양전지(solar cell)의 윈도우층(window layer) 등의 광전자 소자로 응용되고 있으나, 고가의 indium 가격과 인체에 유해한 독성 등이 문제점으로 지적되고 있다. 따라서 indium의 함량을 저감한 새로운 조성의 TCO 또는 indium을 함유하지 않은 친환경적인 TCO 대체 재료 개발의 필요성이 증대되고 있다. 이러한 재료 중 하나인 AZO (Al-doped zinc oxide, $Al_2O_3$: 2 wt.%)는 3.82eV의 넓은 에너지 밴드갭을 가지며, 가시광선 및 근 적외선 파장 영역에 대하여 90% 이상의 높은 투과율을 나타낸다. 또한, 습식식각이 가능하며, 매우 풍부하여 원가가 매우 저렴하고, 독성이 없다. 본 연구에서는 박막 증착율이 높고, 제작과정의 조정이 용이한 RF magnetron 스퍼터를 이용하여 glass 기판 위에 AZO 박막을 성장하고, $N_2$ 분위기에서 다양한 온도 조건에서 열처리(rapid thermal annealing, RTA)하여 전기 및 광학적 특성에 대하여 비교 분석하였다. 또한, 이후에 기존의 성장방법과 달리 고가의 진공 장비를 사용하지 않고, 저온에서도 간단한 구조의 장비를 이용하여 균일한 나노구조를 성장시킬 수 있는 전기화학증착법(electrochemical deposition)으로 AZO 박막위에 ZnO 나노로드를 다양한 성장조건에 따라 성장시켜 광학적 특성을 비교 분석하였다.