• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.987-991
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• 2009

We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.327-331
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

• 대한기계학회논문집B
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• 제37권6호
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• pp.577-582
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• 2013

AZO(Aluminium-doped Zinc Oxide)는 기존의 LCD, OLED, 광센서, 유기태양전지 등의 투명전극에 널리 사용되는 ITO(Indium Tin Oxide)를 대체하기 위한 물질로 주목받고 있다. 본 연구에서는 유기태양전지의 투명 전극으로 많이 사용되는 ITO 를 대체하기 위해 원자층 증착(ALD) 공정의 저온 선택적 증착 특성을 이용하여 유연성 폴리머인 PEN 기판상에 AZO 투명전극을 직접 패턴방식으로 제조하고, 그 투명전극의 구조적, 전기적, 광학적 특성을 평가하였다. 전기적, 광학적 특성 결과들로부터 원자층 증작공정의 저온 선택적 증착 특성을 통해 형성된 AZO 투명전극의 유기태양전지로의 적용 가능성을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Bulletin of the Korean Chemical Society
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• 제31권5호
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• pp.1415-1418
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• 2010

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.173-174
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• 2005

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 추계학술발표회 초록집
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• pp.76-76
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• 2006

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.147-147
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• 2015

최근 투명전극에 많이 사용되고 있는 ITO(Indium Tin Oxide) 투명전극의 단점을 보완하고 대체할 수 있는 메탈메쉬를 이용한 플렉서블 기판소재 연구를 진행하여, 전기도금 공정연구의 실효성을 확인하고 더 다양한 분야에 접목 시킬 수 있는 가능성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제11권2호
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• pp.105-108
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• 1990

A spectroelectrochemical study on the redox chemistry of polyaniline (PANI) was carried out by using indium-tin oxide (ITO) transparent electrode in aqueous acidic solutions. Three different PANI-derived species were observed depending on the potential. The most highly oxidized species having alternating benzenoid-quinoid structures degraded through hydrolysis reaction. The degradation products were confirmed to be p-benzoquinone (BQ) and p-diaminobenzene (PDAB) by spectrophotometry anld potentiostatic experiments. Finally, a degradation mechanism is deduced from the observed behaviour.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.150.1-150.1
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• 2015

일부 금속들은 산화물을 형성하여 반도체적 성질을 갖게 되는데 이를 산화물 반도체라 한다. 산화물 반도체는 전자의 전도 특성에 의해 기존에 널리 사용되고 있는 a-Si 반도체 보다 뛰어난 전자 이동도를 갖고 넒은 Band gap energy를 갖기 때문에 누설 전류가 적어 Device 제작 시 저전력 구동이 가능하다는 장점이 있어 관련 연구가 활발히 진행 중이다. 산화물 박막을 증착하는 방법으로는 용액 공정, CVD, Sputtering 등이 있다. 그 중 Sputtering을 이용한 산화물 박막 증착 시 산소 음이온이 기판으로 가속하여 박막에 충돌, 박막 물성에 영향을 준다는 연구결과가 보고되고 있다. 본 연구에서는 Sputtering을 이용하여 ITO를 증착하는 과정에서 발생하는 산소 음이온을 측정하는 장치를 개발하여 산소 음이온 발생여부를 확인해 보았다.