• Journal of Welding and Joining
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• 제17권5호
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• pp.61-68
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• 1999

For the last two decades, waveform control techniques have been successively developed and applied for the inverter welding machines resulting in the substantial reduction of spatter generated in CO₂ welding. One of the constituents commonly involved in those techniques is to delay the instant of current increase to some extent after the initiation of short-circuiting. Although this technique has been known to be quite effective in reducing the spatter generation through the suppression of is instantaneous short circuiting, the delay time necessary for minimum spatter has not been clearly understood. In this study, the control system for varying the delay time was constructed so that the spatter generation rates could be measured over a wide range of delay time, 0.29-2.0 msec. As a result of this study, it was demonstrated that spatter generation rate(SGR) sharply decreased at delay time of 0.6 msec and longer accompanied with the change in characteristics of short circuit mode from the instantaneous short-circuiting(ISC) dominant to normal short-circuiting(NSC) dominant. Another feature that have been found in current waveform of over 0.6msec was the creation of current pulse right after the arc reignition stage. Because of this current pulses weld pool oscillated in wave-like fashion and it looks like to play an important role in developing short circuiting between electrode and weld pool.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.584-584
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• 2012

결정형 실리콘 태양전지 공정 중 표면 texturing 공정은 표면에 요철을 형성시켜 반사되는 빛 손실을 줄여서, 증가된 빛 흡수 양에 의해 단락전류(Isc)를 증가시키는데 그 목적이 있다. 표면 texturing 공정은 습식 식각과 건식 식각에 의한 방법으로 나눌 수 있다. 습식 식각은 KOH, TMAH, HNA 등의 실리콘 식각 용액을 사용하여 공정상의 위험도가 크고, 사용 후 용액의 폐기물에 의한 환경오염 문제가 있다. 건식 식각은 습식 식각과 달리 폐기물의 처리가 없고 미량의 가스를 이용한다. 그리고 다결정 실리콘 웨이퍼처럼 불규칙적인 결정방향에도 영향을 받지 않는 장점을 가지고 있어서 건식 식각을 이용한 표면 texturing 공정에 관한 많은 연구가 진행되고 있으며, 특히 RIE(reactive ion etching)를 이용한 태양전지 texturing 공정이 가장 주목을 받고 있다. 하지만 기존의 RIE를 이용하여 표면 texturing 공정을 하게 되면 500 nm 이하의 needle-like 구조의 표면이 만들어진다. Needle-like 구조의 표면은 전극을 형성할 때에 접촉 면적이 좁기 때문에 adhesion이 좋지 않은 것과 단파장 대역에서 광 손실이 많다는 단점이 있다. 본 논문에서는 기존의 RIE texturing의 단점을 보완하기 위해 챔버 내부에 metal-mesh를 장착한 후 RIE를 이용하여 $1{\mu}m$의 피라미드 구조를 형성하였고, RIE 공정 시 ion bombardment에 의한 표면 손상을 제거(RIE damage remove etching)하기 위하여 10초간 TMAH(Tetramethyl -ammonium hydroxide, 25 %) 식각 공정을 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.406-406
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• 2011

최근 결정질 실리콘 태양전지 분야에서는 태양전지의 Voc와 Isc의 증가를 통한 효율 향상을 목적으로 후면 passivation 박막에 대한 연구가 활발하게 진행되고 있다. Local-Back Contact Cell은 최적화된 후면 passivation 박막을 이용한 태양전지 제조방법이다. 본 연구에서는 고효율의 LBC 태양전지 개발을 위해 Rapid Thermal Oxide(RTO)를 이용한 후면 passivation 박막에 screen printing을 이용한 point contact 구조의 LBC 태양전지를 제작하고 그 특성을 분석하였다. 본 연구에 사용된 RTO 박막은 O2와 N2, 2L/min의 조건에서 $850^{\circ}C$에서 3분 동안 열처리하여 성장시켰다. 이렇게 성장된 박막은 3nm의 두께로 형성되어 passivation 효과를 나타내었으며, carrier lifetime 측정 결과 37.8us의 값을 나타냈다. 전면 ARC형성을 위해 RTO 박막 위에 PECVD를 이용하여 SiNx passivation 처리를 하였고, 그 결과 carrier lifetime은 49.1us까지 향상하였다. 후면의 전극 형성을 위해 screen printing 방법으로 Al point contact을 형성하여 local 한 BSF를 형성 시켰으며, 이후 후면 전극 연결을 위한 방법으로 300nm의 두께로 full Al evaporation 공정을 진행 하였다. 결과적으로 RTO 후면 passivation 박막에 Al point contact 형성을 통해 제작된 태양전지는, Suns-Voc 579mV, FF 82.3%, 16.7%의 효율을 달성하였다.

• Journal of Microbiology
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• 제41권2호
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• pp.109-114
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• 2003

A promoter that is inducible by paraquat and menadione, the superoxide generators, independently of soxRS has been found in front of the sufABCDSE operon in Escherichia coli. Based on the observation that SufA is a holomog of IscA that functions in the assembly of iron sulfur cluster and the sufA promoter (sufAp) contains a putative Fur-binding consensus, we investigated whether this gene is regulated by Fur, a ferric uptake regulator, When examined in several sufAp-lacZ chromosomal fusion strains, sufAp was induced by EDTA, an iron chelator and a well-known Fur-inducer, The basal level of sufA expression increased dramatically in fur mutant, suggesting repression of sufAp by Fur. The derepression in fur mutant and EDTA-induction of sufA expression required nucleotides up to -61, where a putative Fur box is located. Purified Fur protein bound to the DNA fragment containing the putative Fur box between -35 and -10 promoter elements. The regulation by Fur and menadione induction of sufAp acted independently. The rpoS mutation increased sufA induction by menadione, suggesting that the stationary sigma factor RpoS acts negatively on sufA induction.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.21-25
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• 2014

The texturing is one of the most important processes for high efficiency crystalline silicon solar cells. The rear side flatness of silicon solar cell is very important for increasing the light reflectance and forming uniform back surface field(BSF) region in manufacturing high efficiency crystalline silicon solar cells. We investigated texturing difference between front and rear side of wafer by texturing of two adhered wafers. As a result, the flatter rear side was obtained by forming less pyramid size compared to the front side and improved reflectance of long wavelength and back surface field(BSF) region were also achieved. Therefore, the texturing of two adhered wafers can be expected to improve the efficiency of silicon solar cells due to increased short circuit current(Isc).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.178-181
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• 2008

A solar cell based on dye-sensitized photoelectric conversion was studied by investigating the effects of the amount of polyethylene glycol(PEG), added to the $TiO_2$ paste, on surface morphology of the $TiO_2$ films and on the solar cell performance. Energy conversion efficiency was found to increase with PEG addition up to 20 % by weight of $TiO_2$ and then decrease with further addition due to the aggregation of $TiO_2$ nano particles in the $TiO_2$ film. In this study, the best result of dye-sensitized solar cell was the short circuit current(Isc) of $22.6mAcm^{-2}$, the open circuit voltage (Voc) of 0.73 V, the fill factor (ff) of 0.55 and the overall energy conversion efficiency (${\eta}$) of 9.1 % under illumination with AM 1.5 simulated sunlight.

• 한국환경과학회지
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• 제16권6호
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• pp.715-723
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• 2007

The air pollutant emission is mainly caused by line sources in urban area. For example, the annually totaled air pollutant emission is known to consist of about 80% of line sources in Daegu. Hence, the appropriate assessment on the air pollutants of line sources is very important for the atmospheric environmental management in urban area. In this study, we made a comparative study to evaluate suitable dispersion model for estimating the air pollution from line sources. Two air pollution dispersion models, ISCST3 and CALINE4 were the subject of this study. The results were as follows; In the assessment of air pollution model, ISCST3 was found to have 4 times higher concentration than CALINE4. In addition, actual data obtained by measurement and estimated values by CALINE4 were generally identical. The air pollution assessment based on ISC3 model produced significantly lower values than actual data. The air pollution levels estimated by ISCST3 were very low in comparison with the observational values.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.193-199
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• 2000

As an energetic focused-ion beam(FIB) is irradiated on an inorganic amorphous thin film a majority of ions without a reflection at surface, is randomly collided with constituent atoms in thin film. but their distribution exhibits generally a systematic form of distribution. In our previous paper we reported the concentration distribution and the transmission per unit depth of Ga$^{+}$ ions penetrated int a-Se$_{75}$ /Ge$_{25}$ thin film using the LSS-based calculation. In this paper these simulated results are compared with those obtained by a conventional profile code(ISC) and a practical SIMS profile. Then the results of LSS-based calculation have only a small difference with those of code and SIMS Especially. in the case of Ga$^{+}$-FIB with an accelerating energy of 15keV. the depth of the maximum ion concentration is coincident with each other in an error range of $\pm$5$\AA$.EX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].