• Title/Summary/Keyword: IR-transmittance

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A Study on the Deposition of Boron Phosphide at the Low Temperature using CVD Method and its Characteristics (CVD법을 이용한 보론 포스파이드의 저온 층착과 특성에 관한 연구)

  • 윤여철;김순영;박윤권;강재경;김철주
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.103-107
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    • 2000
  • Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

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Optical waveguide structure design of Non-dispersive Infrared (NDIR) CO2 gas sensor for high-sensitivity (이산화탄소 검출을 위한 고감도 비분산 적외선 가스센서의 광도파관 구조 설계)

  • Yoon, Jiyoung;Lee, Junyeop;Do, Namgon;Jung, Daewoon
    • Journal of Sensor Science and Technology
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    • v.30 no.5
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    • pp.331-336
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    • 2021
  • The Non-dispersive Infrared (NDIR) gas sensor has high selectivity, measurement reliability, and long lifespan. Thus, even though the NDIR gas sensor is expensive, it is still widely used for carbon dioxide (CO2) detection. In this study, to reduce the cost of the NDIR CO2 gas sensor, we proposed the new optical waveguide structure design based on ready-made gas pipes that can improve the sensitivity by increasing the initial light intensity. The new optical waveguide design is a structure in which a part of the optical waveguide filter is inclined to increase the transmittance of the filter, and a parabolic mirror is installed at the rear end of the filter to focus the infrared rays passing through the filter to the detector. In order to examine the output characteristics of the new optical waveguide structure design, optical simulation was performed for two types of IR-source. As a result, the new optical waveguide structure can improve the sensitivity of the NDIR CO2 gas sensor by making the infrared rays perpendicular to the filter, increasing the filter transmittance.

Study on crystallization of $PbTiO_3$ thin films by the Sol-Gel method (Sol-Gel법을 이용한 $PbTiO_3$ 박막의 결정화에 관한 연구)

  • Kyu Seog Hwang;Byung Wan Yoo;Byung Hoon Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.2
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    • pp.199-209
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    • 1994
  • $PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

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UV Absorption of Nano-thick $TiO_2$ Prepared Using an ALD (ALD 방법으로 제조된 나노급 $TiO_2$에 의한 자외선 차단효과 연구)

  • Han, Jeung-Jo;Song, Oh-Sung;Ryu, Ji-Ho;Yoon, Ki-Jeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.4
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    • pp.726-732
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    • 2007
  • We fabricated UV absorption functional $10{\sim}50nm-TiO_{2-x}/quartz$ structures layer using ALD (atomic layer deposition) method. We deposited $10nm-TiO_{2-x}$ layer on quartz substrate using ALD, and film thickness was determined by an ellipsometer. The others specimen thickness was controlled by ALD time lineally. We characterized controlling phase UV and visible optical property using an X-ray difractometer, a UV-VIS-IR spectrometer and a digital camera. $ALD-TiO_{2-x}$ layers were non-stoichiometric $TiO_{2-x}$ form and amorphous phases comparing with bulk $TiO_2$. While the conventional bulk $TiO_2$ had band gap of $3.0{\sim}3.2eV$ resulting in absorption edges at 380 nm and 415 nm, $ALD-TiO_{2-x}$ layers showed absorption edges at 197 nm and 250 nm. Therefore, our nano-thick $ALD-TiO_{2-x}$ was able to absorb shorter UV region and showed excellent transmittance in visible region. Our result implies that our newly proposed nano-thick $TiO_{2-x}$ using ALD process may improve transmittance in visible rays and be able to absorb shorter UV light effectively.

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Fabrication of ATO thin film for IR-cut off by sol-gel method (솔-젤 법에 의한 적외선 차단 ATO 박막 제조)

  • Kim, Jin-Ho;Lee, Kwang-Hee;Lee, Mi-Jai;Hwang, Jonghee;Lim, Tae-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.5
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    • pp.230-234
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    • 2013
  • IR cut-off thin films consisted of ATO nanoparticles were successfully fabricated by sol-gel method. The coating solution was synthesized with organic/inorganic hybrid binder and ATO colloidal solution and ATO thin films were coated on a slide glass with the withdrawal speed of 5~40 mm/s. As the withdrawal speed increased from 5 mm/s to 40 mm/s, the thickness of coating thin films also increased from $1.05{\mu}m$ to $4.25{\mu}m$ and the IR cut-off in wavelength of 780~2500 nm increased from 49.5 % to 66.7 %. In addition, the pencil hardness of ATO thin films dried at $80^{\circ}C$ was ca. 5H and the coating films were not removed after a cross cutter tape test because of the hybrid binder synthesized with tetraethylorthosilicate and methyltrimethoxysilane. The surface morphologies, optical properties and film thickness of prepared thin films with a different withdrawal speed were measured by field emission scanning electron microscope (FE-SEM), UV-Vis spectrophotometer, and Dektak.

Elution Properties of Naringin from Soft Contact Lens Containing Naringin (나린진(naringin)이 함유된 소프트 콘택트렌즈에서 나린진의 용출 특성)

  • Ryu, Geun-Chang;Jun, Jin;Jin, Moon-Seok;Chae, Soo-Chul;Kim, In-Suk
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.3
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    • pp.45-50
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    • 2008
  • Purpose: A soft contact lens was manufactured by adding naringin known as natural anti-bacterial material to resin solution. With solution eluted from manufactured contact lens, we examined its optical properties, physical and chemical states of naringin in the polymer, and elution properties. Methods: The soft contact lens with naringin was synthesized by bulk polymerization method. IR spectrum and HPLC were used to define the bonding type of naringin itself in the soft contact lens contained naringin, elution process of naringin to the saline solution, and the amount of naringin solution eluted from the lens with elapsed time. Results: Naringin was continuously eluted with constant concentration from the soft contact lens for about a month and the structure ofnaringin which is eluted was as same as before it was added to resin solution. Any change in optical properties such as transmittance couldn't be found. Bonding state and the structure of naringin in contact lens were explained with IR spectrum and HPLC results. Conclusions: In the contact lens with naringin, naringin remained in the contact lens bonding with weak hydrogen bonding and/or van der Waals force between naringin and polymer. Naringin was continuously eluted from the contact lens contained naringin during about 1 month. Even after 1 month, it showed that the concentration of the naringin eluted was approximately 10 ppm in a day. From the results, adding naringin to the soft contact lens resin is very effective method for manufacturing the soft contact lens which has anti-bacterial function for a period of time.

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An evaluation on crystallization speed of N doped $Ge_2Sb_2Te_5$ thin films by nano-pulse illumination (나노-펄스 노출에 따른 질소 첨가한 $Ge_2Sb_2Te_5$ 박막의 결정화 속도 평가)

  • Song, Ki-Ho;Beak, Seung-Cheol;Park, Heung-Su;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.134-134
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    • 2009
  • In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

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Low temperature synthesis of ZnO nanopowders by the polymerized complex method (착체중합법을 이용한 ZnO 나노분말의 저온합성)

  • 권용재;김경훈;임창성;심광보
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.5
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    • pp.229-233
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    • 2002
  • Nano-sized ZnO particles were successfully synthesized at low temperatures by a polymerized complex method via an organochemical route. The polymeric precursors could be prepared using Zn nitrate hexahydrate and a mixed solution of citric acid and ethylene glycol as a chelating agent and a reaction medium. The polymeric precursors were calcined at temperatures from 300 to $700^{\circ}C$ for 3 h, and evaluated for degree of crystallization process, thermal decomposition, surface morphology and crystallite size. The thermal decomposition and crystallization process were analyzed by TG-DTA, FI-IR and XRD. The morphology and crystallite size of the calcined particles were evaluated by scanning electron microscopy (SEM), transmittance electron microscopy (TEM) and Scherrer's equation. Crystallization of the ZnO particles was detected at $300^{\circ}C$ and entirely completed above $400^{\circ}C$. Particles calcined between 400 and $700^{\circ}C$ showed a uniform size distribution with a round shape. The average particle sizes calcined at $400^{\circ}C$ for 3 hour were 30~40nm showing an ordinary tendency to increase with the temperatures.

Analysis of rutile single crystals grown by skull melting method (Skull melting법에 의해 성장된 rutile 단결정 분석)

  • Seok, Jeong-Won;Choi, Jong-Koen
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.181-188
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    • 2006
  • Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.

고온고압처리에 따른 천연갈색다이아몬드의 광학특성분석

  • Seo, Jin-Gyo;An, Yong-Gil;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.52-52
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    • 2010
  • 본 연구에서 우리는 HPHT 처리 전 FT-IR spectrometer를 이용한 사전분석을 통해 type Ia brown 다이아몬드를 IaA, IaB, IaAB (A>B), IaAB (A=B), IaAB (A$1700-1800^{\circ}C$, 5 GPa에서 다이아몬드가 흑연화 되지 않는 범위 하에 HPHT처리를 시행하였다. 자외선-가시광선 분광분석기(UV-Vis Spectrometer, Shimadzu UV 3101PC)를 사용하여 350~800 nm에서의 가시광선 범위를 0.1nm의 분해능으로 투과(Transmittance) 모드로 측정하였고, 퓨리에 변환 적외선 분광분석기(FT-IR spectrometer, Jasco-4100)을 사용하여 $400{\sim}6000cm^{-1}$의 범위에서 $4cm^{-1}$ 의 분해능으로 흡수(Absorption) 모드로 측정한 후 HPHT 처리 전후를 비교 분석하였다. 또한 광루미네선스(Photoluminescence) 분석은 325 nm He-Cd laser를 광원으로 한(PL, Spectra-pro 2150i, Spectra-pro 2300i micro-spectrometer) 및 532 nm green laser를 광원으로 한(PL, SAS 2000)를 사용하여 각각 350~600 nm, 550~1100 nm의 범위에서 0.1nm step으로 측정하여 HPHT 처리전과 후를 비교 분석하였다. HPHT처리 후 모든 시료는 N3 center (415.4 nm), H4 center (496.4nm) 및 platelet와 연관된 ($1363\;cm^{-1}$)의 peak가 감소하였고, H3 center (503.2 nm)와 G-band가 증가하는 경향을 나타내었다. 또한 HPHT 처리 시 질소의 B집합보다 A집합이 더 감소하는 경향을 나타내었으며, A 또는 B집합의 파괴에서 발생된 질소 원자에 의해 질소의 interstitial center (594 nm)가 증가함을 알 수 있었다. HPHT 처리 후 모든 시료는 (N-V)- center가 생성됨을 확인 할 수 있었다. 결론적으로 본 연구를 통해 HPHT 처리를 통해 다이아몬드 내에 존재하는 질소결합관련 상태의 변화를 확인할 수 있었다.

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