• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.197-200
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation whose RF and LO signal is better than 40 dBc at 2 GHz and 5 GHz band. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation. The input matching circuit has been designed to have conversion gain from 2 GHz to 6 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz at a low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.26-32
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• 1994

In this paper, using the newly developed GaAs Schottky beam-lead diode made by Marconi company, we have developed and evaluated the waveguide type single-ended mixer at Q-band. The various components of the mixer were separately designed and optimized using the Super-Compact software. These studies included the design of the step waveguide impedance transformer and the RF-choke filter, and the optimization of a high and low impedance for the RF-choke filter. Moreover, this RF-choke filter pattern included a section to reject the second harmonic frequency of the RF signal. Finally, this Q-band mixer with 1.4GHz/400MHz IF frequency exhibits an average conversion loss of 5.3 dB over 33-50GHz bandwidth.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.54-58
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• 2002

This paper describes the theoretical analysis and performance of a 2.4㎓ bulk-driven downconversion mixer, where the LO signal is input via the bulk. A mixer core designed with a 0.18$\mu\textrm{m}$ CMOS process is able to operate under 0.8V∼1V supply voltage. The RF, LO, and IF port frequencies are 2.45㎓, 2.4㎓, and 50MHz, respectively. The measurement results exhibit conversion gain of -1.8㏈, l㏈ compression point of -17㏈m and IIP3 of -4㏈m with 0㏈m LO power. The power consumption is as small as 4mW.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.113-114
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• 2006

In this paper, dual-gate mixer has been designed and optimized to have variable conversion gain for WiBro and WLAN applications and to save power. With the LO power of 0dBm and RF power of -50dBm, the mixer shows 15dB conversion gain. When RF power increases from -50dBm to -20dBm, the conversion gain decreases to -2dB with bias change. The variable conversion gain can reduce the high dynamic range requirement of AGC burden at IF stage. Also, it can save the dc power dissipation of mixer up to 90%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.944-950
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• 1993

Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.103-109
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation with RF and LO signal of better than 40 dBc from 1.5 GHz to 5.5 GHz. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation region. The input matching circuit has been designed to have conversion gain from 1.5 GHz to 5.5 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 1.5 GHz to 5.5 GHz at the low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.9
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• pp.1941-1948
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• 1997

In this paper, the power efficient linear upconversion mixer which is a functional circuit in transmit path of intermediate frequency(IF) part of Code Division Multiple (CDMA) cellular phone was explained. In generally, the low CMOS devices limits the implementation of upconversion mixer especially for lower loads. Using replica transconductor, the linear range is extended up to the limit. Thiscircuit was imprlemented using $0.8{\mu}\textrm{m}$ N-well CMOS technology with 2-poly/2-metal. The active area of chip is $0.53mm{\times}0.92mm$. The power consumption is 30mW with 3.3V suply voltage. The 1dB conpression characteristics is -27.3dB with $25{\Omega}$. load and being applied by 2-tone input signal. The mixer operates properly above 200MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.139-142
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• 2000

In this paper, we designed a Self-Oscillating mixer(SOM) for Microwave Transceiver. Implemention of SOM shows the output power of 4.33dBm at 10.750Hz and the phase-noise of -102dBc/Hz at 100KHZ offset frequency, Applying the input frequency band 11.7GHz∼12.9GHz, The designed SOM If frequency is 950MHz∼2150MHz and its conversion gain is 6dB in the If band. We convinced that SOM is applied to a digital transceiver down-converter

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.3 s.8
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• pp.45-50
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• 2005

In this paper, a broadband single balanced mixer is presented using a wideband rat-race implementation by vertical coupling. Frequency is selected as $1.5{\sim}3$ GHz for RF, $1.64{\sim}3.14$ GHz for LO, and 140 MHz for IF signals. When LO signal with 6 dBm at 2.7 GHz is injected, a conversion loss of 7.5 dB and RF to LO isolation of 30 dB are obtained. Also, an average conversion loss of 10 dB, RF to LO isolation of 30 dB, and LO to IF isolation of 45 dB are obtained for frequency band of $1.5{\sim}3$ GHz.