• Title/Summary/Keyword: IEEE 802.11.a.g.b

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V-Band Power Amplifier MMIC with Excellent Gain-Flatness (광대역의 우수한 이득평탄도를 갖는 V-밴드 전력증폭기 MMIC)

  • Chang, Woo-Jin;Ji, Hong-Gu;Lim, Jong-Won;Ahn, Ho-Kyun;Kim, Hae-Cheon;Oh, Seung-Hyueb
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.623-624
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    • 2006
  • In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

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Design of a High Efficiency Class E Amplifier for Wireless LAN (무선 LAN용 고효율 E급 증폭기 설계)

  • Park Chan-Hyuck;Koo Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.8 s.350
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    • pp.91-96
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    • 2006
  • High efficiency switching mode circuits such as class I amplifiers have been well known in the MHz frequency range. The class E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper, the class E amplifier has been designed by using the harmonic balance method of circuit simulator. The designed amplifier is realized by using pHEMT and microstrip line, shows 66% power added efficiency (PAE) at 2.4GHz with 17.6dBm output power. With -3dBm input power of wireless LAN, measured output spec01m can meet the required IEEE 802.11g standard spectrum mask. That means the required amplifier back off of 9dB from $P_{ldB}$ to satisfy the required wireless LAN spectrum mask.