• 대한환경공학회지
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• 제30권6호
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• pp.621-627
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• 2008

본 연구에서는 물속 As(III)와 As(V)의 종 규명분석에 필요한 HPLC와 DRC-ICP-MS의 최적조건을 설정하고, 이를 이용하여 한강 팔당수계 10개 지류 천으로부터 채취한 시료중의 As(III)와 As(V)를 분석 검토하였다. 종 분리를 위한 HPLC의 이동상으로는 10 mM ammonium nitrate와 10 mM ammonium phosphate monobasic을 사용하였으며, flushing solvent로는 5% v/v 메탄올을 사용하였다. 검출기는 DRC-ICP-MS를, 반응기체는 산소를 사용하였다. 최적 분석조건을 설정하기 위하여 이동상의 pH, 유량 및 시료 주입량과 DRC의 산소 유량을 달리하여 검토한 결과, 이동상의 pH는 9.4, 유량은 1.5 mL/min, 시료 주입량은 100 $\mu$L, 산소의 유량은 0.5 mL/min이었을 때 가장 좋은 분석조건으로 나타났다. 검정곡선은 As(III)와 As(V)에 대해 모두 r$^2$ = 0.998 이상의 선형성을 나타냈으며, As(III)의 검출한계는 0.10 $\mu$g/L, 정확도(RSD)는 4.3%, 회수율은 95.2%, As(V)의 검출한계는 0.08 $\mu$g/L, 정확도(RSD)는 3.6%, 회수율은 96.4%로 나타났다. 분석시간은 4분이었다. 설정된 파라미터를 적용하여 한강 팔당수계 유입 10개 지류 천에서 채수한 시료를 분석한 결과, As(III)는 0.10$\sim$0.22 $\mu$g/L, As(V)는 0.44$\sim$1.19 $\mu$g/L의 범위로 나타났으며, 총 비소의 93.5%가 As(V)의 형태인 것을 확인할 수 있었다.

• Journal of Korean Neurosurgical Society
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• 제64권2호
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• pp.261-270
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• 2021

Objective : Decompressive craniectomy (DC) can partially remove the unyielding skull vault and make affordable space for the expansion of swelling brain contents. The objective of this study was to compare clinical outcome according to DC surface area (DC area) and side. Methods : A total of 324 patients underwent different surgical methods (unilateral DC, 212 cases and bilateral DC, 112 cases) were included in this retrospective analysis. Their mean age was 53.4±16.6 years (median, 54 years). Neurological outcome (Glasgow outcome scale), ventricular intracranial pressure (ICP), and midline shift change (preoperative minus postoperative) were compared according to surgical methods and total DC area, DC surface removal rate (DC%) and side. Results : DC surgery was effective for ICP decrease (32.3±16.7 mmHg vs. 19.2±13.4 mmHg, p<0.001) and midline shift change (12.5±7.6 mm vs. 7.8±6.9 mm, p<0.001). The bilateral DC group showed larger total DC area (125.1±27.8 ㎠ for unilateral vs. 198.2±43.0 ㎠ for bilateral, p<0.001). Clinical outcomes were nonsignificant according to surgical side (favorable outcome, p=0.173 and mortality, p=0.470), significantly better when total DC area was over 160 ㎠ and DC% was 46% (p=0.020 and p=0.037, respectively). Conclusion : DC surgery is effective in decrease the elevated ICP, decrease the midline shift and improve the clinical outcome in massive brain swelling patient. Total DC area and removal rate was larger in bilateral DC than unilateral DC but clinical outcome was not influenced by DC side. DC area more than 160 ㎠ and DC surface removal rate more than 46% were more important than DC side.

• 분석과학
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• 제28권5호
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• pp.309-316
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• 2015

본 연구에서는 ICP-MS의 혈장 중 극미량의 납 분석법을 검증하기 위하여 Class 1,000 이내의 환경조건을 확보한 후 특이성, 일내 및 일간 정확도, 정밀도, 검정곡선 등을 확인하였다. 청정실의 부유 분진량을 측정한 결과, 0.3 µm 크기는 0.3~62개, 0.5 µm 크기는 0.0~28.3 개로 총 부유분진량이 최대 90.3개로 요구 환경에 부합하였다. 우태아 혈청 공시료로 조제한 시료의 MDL (Method detection limit)은 1.77 ng/L이고, LOQ (Limit of quantification)값은 5.55 ng/L 이었다. 검정곡선은 y=1.09×10⁻³ x+4.88×10⁻²이었고, 상관계수 r=0.9999이었다. 분석법 확립을 위한 특이성, 일내 및 일간 정확성, 정밀성, 그리고 검정곡선을 확인한 결과 50 ng/L 이상에서 분석법 확인 기준에 적합하였다. 이를 토대로 분석한 일반인의 혈장 중 납 농도 평균은 55.4 ng/L 이었으며, 현직 근로자는 440 ng/L 이었고, 퇴직 근로자는 132 ng/L 이었다.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2004년도 Proceedings of the 4th Korea-China Joint Workshop on Nuclear Waste Management
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• pp.182-190
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• 2004

An unique extraction chromatographic column (TOA: Tri-n-octylamine on Teflon powder) with a two-stage sample loading was prepared to separate Np and Pu from the environmental matrix. Np and Pu were efficiently retained in 4 M $HNO_3$ medium on the column and easily eluted with 0.02 M oxalic acid in 0.16 M HNO$_3$at $95^{\circ}C$. The separated solutions were free from most of the matrix elements and were aspirated into the ICP-MS directly. The decontamination factor for 238U is more than 104. The instrumental detection limit for 237Np was 0.46 pg mL-l ($1.2{\times}10_{-5}$Bq mL-l), and for 239Pu was 0.48 pg mL-l ($1.1{\times}10_{-3}$ Bq mL-l). The feasibility for the determination of both elements was proved by analysing IAEA-135 reference samples, the measured values agreed with the recommended reference value.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• 전기의세계
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• 제43권3호
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• pp.29-35
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• 1994

집적회로 제조를 위하여 점차로 대면적, 고밀도 플라즈마 원이 요구됨에 따라 유도결합 플라즈마에 대한 관심이 다시 새로워지고 있다. 여기서는 몇가지 형태의 유도 결합 플라즈마원을 소개한다. 보통 0.5-28 MHz의 RF유도결합으로 mTorr 이하의 저압방전에서도 $10^{12}$$cm^{-3}$이상의 이온밀도를 얻을 수 있다. ICP는 플라즈마 공정의 미래 요구에 부응할 방법 중의 하나임에 틀림없으며 오래전부터 알려져 있었으나 아직 공정개발, 플라즈마 물성 및 모델링에 관한 연구가 많이 필요하므로 소개하고자 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1003-1006
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• 2004

We have fabricated poly-Si TFTs at 170$^{\circ}C$ using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). A Poly-Si film with large grains exceeding 5000${\AA}$ and a $SiO_2$ film with high breakdown field are deposited by ICP-CVD. A high mobility exceeding 100$cm^2$/Vs with a low sub-threshold swing of 0.76V/dec was obtained.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• 한국표면공학회지
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• 제37권3호
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• pp.169-174
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• 2004

MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.220-220
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• 2012

저밀도 알곤 유도결합플라즈마(Ar-ICP) 를 적용한 그래핀 클리닝 연구를 보고한다. 알곤 축전결합플라즈마(Ar-CCP)는 높은 이온포격에너지 (수백 eV) 로 인하여 그래핀의 C-C $sp_2$ bonding을 쉽게 파괴하고 defect을 형성시킨다. 그러나 저밀도 ($n_i$ < $5{\times}10^8cm^{-3}$) Ar-ICP 에 노출된 그래핀은 낮은 이온포격에너지, 이온밀도로 인하여 defect 이 형성되지 않고 residue 제거가 가능하였다. Graphene 이 집적된 back-gated field effect transistor (G-FET) 가 저밀도 Ar-ICP 에 노출될 경우 resist residue 제거로 인하여 $V_{dirac}$ 이 0 V 방향으로 이동하고 mobility 가 증가하는 것을 확인하였다.