• 제목/요약/키워드: IBS-C

검색결과 66건 처리시간 0.026초

Bi 초전도 박막 성장을 위한 분위기가스의 특성 (Characteristics of Ambient Gas for Bi-Superconductor Thin Films Growth)

  • 임중관;박용필;장경욱;이희갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.587-588
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    • 2005
  • Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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Dynamic Changes in the Bridging Collaterals of the Basal Ganglia Circuitry Control Stress-Related Behaviors in Mice

  • Lee, Young;Han, Na-Eun;Kim, Wonju;Kim, Jae Gon;Lee, In Bum;Choi, Su Jeong;Chun, Heejung;Seo, Misun;Lee, C. Justin;Koh, Hae-Young;Kim, Joung-Hun;Baik, Ja-Hyun;Bear, Mark F.;Choi, Se-Young;Yoon, Bong-June
    • Molecules and Cells
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    • 제43권4호
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    • pp.360-372
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    • 2020
  • The basal ganglia network has been implicated in the control of adaptive behavior, possibly by integrating motor learning and motivational processes. Both positive and negative reinforcement appear to shape our behavioral adaptation by modulating the function of the basal ganglia. Here, we examined a transgenic mouse line (G2CT) in which synaptic transmissions onto the medium spiny neurons (MSNs) of the basal ganglia are depressed. We found that the level of collaterals from direct pathway MSNs in the external segment of the globus pallidus (GPe) ('bridging collaterals') was decreased in these mice, and this was accompanied by behavioral inhibition under stress. Furthermore, additional manipulations that could further decrease or restore the level of the bridging collaterals resulted in an increase in behavioral inhibition or active behavior in the G2CT mice, respectively. Collectively, our data indicate that the striatum of the basal ganglia network integrates negative emotions and controls appropriate coping responses in which the bridging collateral connections in the GPe play a critical regulatory role.

SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향 (Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films)

  • 장재훈;이동근;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.723-727
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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IBSD법에 의한 SBN60 강유전체 박막의 배향 및 전기적 특성 (Crystallization and Electrical Properties of SBM Thin Films by IBSD Process)

  • 정성원;장재훈;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.869-873
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    • 2004
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

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$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) 초전도 박막의 혼합상에 대한 고용비 해석 (Analysis of Stacking-Fault Proportion on the Mixed Phase of the $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) Superconducting Thin Films)

  • 양승호;이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.486-487
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    • 2007
  • $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

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SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향 (Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films)

  • 장재훈;이동근;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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    • pp.85-88
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    • 2003
  • $Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

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살구를 이용한 와인 제조 (Studies on Manufacture of Wine using Apricot)

  • 정기태;주인옥;류정;최정식;최영근
    • 한국식품저장유통학회지
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    • 제10권4호
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    • pp.493-497
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    • 2003
  • 살구의 홍수출하에 의한 가격하락 방지와 부가가치 향상을 위하여 살구가공식품을 다양화하고자, 살구와인의 제조에 필요한 우수 균주, 적정 과즙 첨가량, 당 종류, 질소원 및 농도, 아황산 첨가 등 적정 발효조전을 검토한 결과는 다음과 같다. 살구 발효주의 우수 균주는 JBS 15과 IBS 30이었고 적정배지 조성은 과즙 50%, 설탕 24 。brix, (NH$_4$)$_2$SO$_4$ 0.2%, $Na_2$SO$_3$ 200ppm이었으며 $25^{\circ}C$에서 10일 발효하면 12.3∼12.5% 알코올이 생성되었다. 관능검사 결과 두 균주 간 차이가 없이 색, 맛, 향 모두 양호하였다.

SBN 박막의 결정화 및 전기적 특성에 관한 씨앗층 두께의 영향 (Effect of Seed-layer thickness on the Crystallization and Electric Properties of SBN Thin Films.)

  • 장재훈;이동근;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.271-274
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

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IL-17 and IL-17C Signaling Protects the Intestinal Epithelium against Diisopropyl Fluorophosphate Exposure in an Acute Model of Gulf War Veterans' Illnesses

  • Kristen M. Patterson;Tyler G. Vajdic;Gustavo J. Martinez;Axel G. Feller;Joseph M. Reynolds
    • IMMUNE NETWORK
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    • 제21권5호
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    • pp.35.1-35.16
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    • 2021
  • Gulf War Veterans' Illnesses (GWI) encompasses a broad range of unexplained symptomology specific to Veterans of the Persian Gulf War. Gastrointestinal (GI) distress is prominent in veterans with GWI and often presents as irritable bowel syndrome (IBS). Neurotoxins, including organophosphorus pesticides and sarin gas, are believed to have contributed to the development of GWI, at least in a subset of Veterans. However, the effects of such agents have not been extensively studied for their potential impact to GI disorders and immunological stability. Here we utilized an established murine model of GWI to investigate deleterious effects of diisopropyl fluorophosphate (DFP) exposure on the mucosal epithelium in vivo and in vitro. In vivo, acute DFP exposure negatively impacts the mucosal epithelium by reducing tight junction proteins and antimicrobial peptides as well as altering intestinal microbiome composition. Furthermore, DFP treatment reduced the expression of IL-17 in the colonic epithelium. Conversely, both IL-17 and IL-17C treatment could combat the negative effects of DFP and other cholinesterase inhibitors in murine intestinal organoid cells. Our findings demonstrate that acute exposure to DFP can result in rapid deterioration of mechanisms protecting the GI tract from disease. These results are relevant to suspected GWI exposures and could help explain the propensity for GI disorders in GWI Veterans.

MODBUS 프로토콜에서 작동되는 음성 및 SMS 경보 시스템 개발에 관한 연구 (A Study on Development of Voice and SMS Alarm System Based on MODBUS Protocol)

  • 설준수;이승호
    • 전기전자학회논문지
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    • 제19권3호
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    • pp.311-318
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    • 2015
  • 본 논문에서는 모드버스 프로토콜에서 작동되는 음성 및 SMS(Short Message Service) 경보 시스템 개발 기법을 제안한다. 제안된 기법은 마이크로프로세서 기반의 하드웨어 개발, 모뎀 및 MP3 디코더 등 입출력장치 드라이버 개발, 모드버스 프로토콜의 스택 구현 등의 3가지 과정으로 구성된다. 마이크로프로세서 기반의 하드웨어 개발 과정은 모드 버스 마스터로부터 경보를 수신 하여 SMS 전송 및 MP3를 재생할 수 있는 하드웨어를 개발하는 단계이다. 모뎀 및 MP3 디코더 등 입출력장치 드라이버 개발 과정은 하드웨어에 부착된 각 종 입출력 장치(SD 카드, MP3 디코더, SMS 모뎀, LCD, Relay 등)들을 제어하기 위한 마이크로프로세서용 구동 프로그램을 개발하는 단계이다. 모드버스 프로토콜의 스택 구현 과정은 음성 및 SMS 경보장치가 모드버스 프로토콜을 통하여 경보 메시지를 수신할 수 있도록 지원하는 프로토콜 스택 구현 단계이다. 제안된 기법의 성능을 평가하기 위하여 본 논문에서 개발된 음성 및 SMS 경보 시스템에 임의로 경보를 발생시키어 테스트를 실시하였다. 실험 결과, 경보 감지의 응답 속도는 10.7ms, 통신거리는 1.2Km, 제품의 동작온도는 $-25^{\circ}C{\sim}70^{\circ}C$, 모드버스 프로토콜을 지원하는 것으로 확인되었다. 따라서 본 논문에서 제안한 음성 및 SMS 경보 시스템은 산업용 빌딩 경보 시스템으로 사용될 수 있을 만큼의 성능을 가지고 있음을 확인하였다.