• Title/Summary/Keyword: IBE (Ion Beam Etcher)

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Newly Designed Ion Beam Etcher with High Etch Rate

  • Cheong, Hee-Woon
    • Journal of Magnetics
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    • v.20 no.4
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    • pp.366-370
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    • 2015
  • New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.