• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.1
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• pp.200-207
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• 2003

In this paper, the effect of the compressive residual stresses which were obtained under the various shot velocities of shot balls on the fatigue behaviors of a spring steel, were investigated. The examination of CT specimen test were executed with the materials(JISG SUP9) which are being commonly used for the springs of automotive vehicles. As a result, the optimal shot velocity of shot balls were acquired considering the peak values of the compressive residual stresses on the surface of specimen and effect on the speed of the fatigue crack propagation da/dN in stage II and the threshold stress intensity factor range Δ$K_{th}$ in stage I. Also the material constant C and the crack propagation index m in the formula of paris law da/dN= C $({\Delta}K^m)$ were suggested in this work to estimate the dependency on the shot velocity.

• Magazine of the Korean Society of Agricultural Engineers
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• v.43 no.3
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• pp.77-84
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• 2001

A few study has been performed on the durability of subbase treated with geo-cement for the farm road although many papers for the road treated with soil-cement were published. The objectives of the study are to develop the stabilizing method of subbase using additives of cement groups and 2nd additives such as gypsum and MgO, etc. A series of test was performed to investigate possible mixing ratios with geo-cement A, B, C, D and 2nd additives on the various soft soils from the rice paddy. Based on test results, durability index was greatly affected by geo-cement D which was mainly composed with gypsum. Compressive strength of clayey soil such as Soil I was less than threshold strength(30kgf/$\textrm{cm}^2$) but the strength was increased as addition of gypsum and MgO. It is recommended that geo-cement for soil stabilization has to be carefully chosen because strength characteristics of subbase are varied not only with soils but also with addition of geo-cement and 2nd additives. The developed method in this study can be used subbase treatment of low-cost agricultural roads.

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.220-223
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• 2001

In this study, CT specimens were prepared hem ASTM SA516 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -l$0^{\circ}C$ and -l2$0^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ΔK$_{th}$ in the early stage of fatigue crack growth ( Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN - ΔK in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region H and the cryogenic-brittleness greatly affect a material with decreasing temperature.e.greatly affect a material with decreasing temperature.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.327-332
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• 1997

We fabricated the high speed 1.55${\mu}{\textrm}{m}$ distributed feedback laser diodes (DFB-LD) using both two-step mesa etching process and semi-insulating InP current blocking layers. The devices characteristics were threshold current of ~15mA, slope efficiency of ~0.13mW/mA, and dynamic resistance of ~6.0Ω, with as-cleaved facets. The fabricated DFB-LD showed the single longitudinal mode with more than 40dB up to 6 $I_{th}$(CW condition), emitting at the wavelength of 0.546${\mu}{\textrm}{m}$. The -3dB bandwidth was >10㎓ at the driving current of 27mA, and the maximum -3dB bandwidth was ~18㎓ at 90 mA current, showing the superior frequency response of SI-PBH DFB-LD. In the 10Gb/s transmission experiment for 1.55${\mu}{\textrm}{m}$ DFB-LD module, maximum 10 km of single mode fiber(SMF) or 80 km of dispersion shifted fiber (DSF) could be transmitted with error free.

• Journal of environmental and Sanitary engineering
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• v.13 no.1
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• pp.123-134
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• 1998

The study was performed to investigate the differences among various evaluation criteria for noise-induced hearing loss(NIHL). The subjects were 100 workers who had received detailed audiometric examinations after the periodic annual examination for hearing loss. The evaluation criteria included were as follows: The criterion I was NIHL of 50dB or greater at 4,000Hz in either ear which is one of the legal requirements for determining occupational hearing loss in Korea. The criterion II was NIHL of 40dB or greater by 4-divided classification(a+b+c+d/4 at 500Hz(a), 1,000Hz(b), 2,000Hz(c), 4,000Hz(d)) which is also one of the legal requirements for determining occupational hearing loss in Korea. The criterion III was NIHL of 31dB of greater by 6-divided classification(a+2b+2c+d/6) which is the workers' compensation standard. The criterion IV was NIHL of 40dB or greater by 6-divided classification(a+2b+2c+d/6), the criterion used to prohibite workers to be employed in the noisy workplace. The criterion V was NIHL of 40dB or greater by 3-divided classification(a+b+c/3) which is the guideline of the Japanes Labour Department. The results were as follows; 1. The percentage of workers with NIHL by the criterion I was the highest(96%) and covered all workers with NIHL diagnosed by other criteria. Therefore, this criterion was the most sensitive one for early detection of NIHL among various evaluation criteria. 2. The percentage of workers with NIHL by the criterion II was 29% of the subjects, but all of them could be diagnosed as having NIHL by the criterion I and 33.1% of the NIHL by the criterion III could not be covered by the criterion II. Thus, this criterion was not considered suitable as an initial step for determining occupational hearing loss. 3. The percentage of workers with NIHL by the criterion III was 45% of the subjects. This percentage was 46.9% of the NIHL by the criterion I and was estimated to cover 3.6% of all noise exposed workers. 4. The percentage of workers with NIHL by the criterion IV was 28% of the subjects, but 37.8% of the NIHL by the criterion III and 70.8% of the NIHL by the criterion I were not covered by the criterion. Therefore, these workers could have been employed in the noisy workplaces. 5. Employed relocation which was one of the post management methods was an option in the criterion I in Korea and in the criterion V in Japan. The number of NIHL by the criterion I was 6.7times greater than that by the criterion V. Thus, although employee relocation was not used exclusively, many more workers with NIHL could have been relocated. In conclusion, this study revealed that the criteria being used for managing occupational hearing loss showed a lack uniformity among them. In addition, since these criteria are all relied on the total threshold shifts caused by the noise exposure at the time of hearing test with no consideration given to the past noise exposure history nor age, it can be said that they are not an effective tool for occupational hearing loss management. Since legal requirements are usually followed after being diagnosed as having NIHL, it is recommended that a uniform diagnostic criterion should be used to minimize confusion. Pre-employment hearing tests should also be utilized so as to managing occupational hearing loss after employment rather than being used as a legal roadblock of prohibiting workers with mild hearing loss from being employed. Thus, what is needed is an establishment of a rational criterion for occupational hearing loss management rather than for legal requirements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.545-549
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• 2010

Low-frequency noise (1/f noise) has been measured in order to analyze the Vth instability of ZnO TFTs having two different active layer thicknesses of 40 nm and 80 nm. Under electrical stress, it was found that the TFTs with the active layer thickness of 80 nm shows smaller threshold voltage shift (${\Delta}V_{th}$) than those with thickness of 40 nm. However the ${\Delta}V_{th}$ is completely relaxed after the removal of DC stress. In order to investigate the cause of this threshold voltage instability, we accomplished the 1/f noise measurement and found that ZnO TFTs exposed the mobility fluctuation properties, in which the noise level increases as the gate bias rises and the normalized drain current noise level($S_{ID}/{I_D}^2$) of the active layer of thickness 80 nm is smaller than that of active layer thickness of thickness 40 nm. This result means that the 80 nm thickness TFTs have a smaller density of traps. This result correlated with the physical characteristics analysis performmed using XRD, which indicated that the grain size increases when the active layer thickness is made thicker. Consequently, the number of preexisting traps in the device increases with decreasing thickness of the active layer and are related closely to the $V_{th}$ instability under electrical stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.163-166
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• 2004

모바일향 90nm DRAM을 개발하기 위하여 비대칭 채널 구조를 갖는 Recess Channel Array Transistor (RCAT)로 cell transistor를 구현하였다. DRAM cell transistor에서 junction leakage current 증가는 DRAM retention time 열화에 심각한 영향을 미치는 요인으로 알려져 있으며, DRAM의 minimum feature size가 점점 감소함에 따라 short channel effect의 영향으로 junction leakage current는 더욱 더 증가하게 된다. 본 실험에서는 short channel effect의 영향에 의한 junction leakage current를 감소시키기 위하여 Recess Channel Array Transistor를 도입하였고, cell transistor의 채널 영역을 비대칭으로 형성하여 data retention time을 증가시켰다. 비대칭 채널 구조을 이용하여 Recess Channel Array Transistor를 구현한 결과, sub-threshold 특성과 문턱전압, Body effect, 그리고, GIDL 특성에는 큰 유의차가 보이지 않았고, I-V특성인 드레인 포화전류(IDS)는 대칭 채널 구조인 transistor 대비 24.8% 정도 증가하였다. 그리고, data retention time은 2배 정도 증가하였다. 본 실험에서 얻은 결과는 향후 저전압 DRAM 개발과 응용에 상당한 기여를 할 것으로 기대된다.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.1 s.343
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• pp.49-56
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• 2006

This paper describes the design and the verification of IEEE 802.15.4 LR-WPAN 2.4GHz Physical layer for Ubiquitous Sensor Network(USN). We designed the Carrier Frequency Offset(CFO) compensation satisfied the frequency tolerance of IEEE 802.15.4 LR-WPAN and the adaptive matched filter that re-setting of the threshold for the symbol synchronization of the various USN environment. The multiplications is reduced 1/16 by this method each other at i, q phases and has 0.5dB performance improvement in detection probability. Proposed baseband system is designed with verilog HDL and implemented using FPGA prototype board.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.