• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.142-160
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• 1996

Petrological and geochemical characteristics of A-type granite were studied from the Namsan and Tohamsan granites in the vicinity of Kyeongju city, southeastern Korea. The Namsan granite consists of hypersolvus alkali-feldspar granite in the northern part and subsolvus alkali-feldspar to biotite granite in the southern part. This hypersolvus granite usually has miarolitic cavities and is characteristically composed of quartz, single homogeneous one-feldspar (alkali feldspar) forming tabular microperthite crystals, or micrographic intergrowth with quartz, and interstitial biotite (Fe-rich annite), alkali amphibole (riebeckitic arfvedsonite) and fluorite. Petrographic and petrochemical characteristics indicate that the hypersolvus granite and subsolvus granite from the Namsan belogn to the A-type and I-type granitoid, respectively. The A-type granite is petrochemically distinguished from the I-type Bulgugsa granites of Late Cretaceous in South Korea, by higher abundance of $SiO_2$, $Na_2O$, $Na_2O+K_2O$, large highly charged cations such as Rb, Nb, Y, Zr, Ga, Th, Ce. U the REEs and Ga/Al ratio, and lower abundance of $TiO_2$, $Al_2O_3$, CaO, $P_2O_5$, MnO, MgO, Ba, Sr, Eu. The total abundance of REEs is 293 ppm to 466 ppm, showing extensively fractionated granitic compositon, and REEs/chondrite normalized pattern shows flat form with strong Eu '-' anomaly ($Eu/Eu^{\ast}$=0.03-0.05). A-type granite from the Namsan area is thought to have been generated late in the magmatic/orogenic cycle after the production of I-type granite and by direct, high-temperature partial melting of melt-depleted, relatively dry tonalitic/granulitic lower crustal material with underplating by mantle-derived basaltic magmas associated with subduction.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.313-314
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• 2008

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.530-538
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• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/ (110 K phase) high $T_{C}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with 5~50 wt％ MgO were sintered at 820~86$0^{\circ}C$ for 24 h. The structural characteristics, critical temperature and grain size of the samples with different MgO contents were analyzed by XRD and SEM. As the MgO content increased, the intensity of MgO peaks and ratio of Bi-2212 phase in superconductors were intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.d.creased.d.

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.113-130
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• 2014

In this paper, we propose BLOCS algorithm to find sequence of data that should be saved in cache device of hybrid storage system which uses SSD as a cache device. BLOCS algorithm which uses a sequence pattern mining scheme, creates a set of frequently requested sectors with respect to requested order of sectors. To compare the performance of the proposed scheme, we introduce Distance (DIST) based scheme, Request Frequency (FREQ) based scheme, and Frequency times Size (F-S) based scheme. We measure the hit ratio and I/O latency of different caching schemes using hybrid storage caching simulator. We acquired booting workload along with ten scenarios of launching applications and use the workloads as input to the cache simulator. After experiment with booting workload, we find that BLOCS scheme gives hit ratio of 61% which is about 15% higher than the least performing DIST scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.63-63
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• 2009

Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(${\mu}$), threshold voltage ($V_{th}$), and $I_{on/off}$ ratio are investigated for the application of the display and electronic devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.172-175
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• 2003

We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.225-230
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• 2014

A kinetic study on nucleophilic substitution reactions of 4-nitrophenyl X-substituted-benzoates (7a-i) with EtOK in anhydrous ethanol at $25.0{\pm}0.1^{\circ}C$ is reported. The plots of pseudo-first-order rate constants ($k_{obsd}$) vs. [EtOK] curve upward. Dissection of $k_{obsd}$ into the second-order rate constants for the reactions with the dissociated $EtO^-$ and ion-paired EtOK (i.e., $k_{EtO^-}$ and $k_{EtOK}$, respectively) has revealed that the ion-paired EtOK is more reactive than the dissociated $EtO^-$. Hammett plots for the reactions of 7a-i with the dissociated $EtO^-$ and ion-paired EtOK exhibit excellent linear correlations with ${\rho}_X$ = 3.00 and 2.47, respectively. The reactions have been suggested to proceed through a stepwise mechanism in which departure of the leaving-group occurs after the RDS. The correlation of the $k_{EtOK}/k_{EtO^-}$ ratio with the ${\sigma}_X$ constants exhibits excellent linearity with a slope of -0.53. It is concluded that the ion-paired EtOK catalyzes the reaction by increasing the electrophilicity of the reaction center rather than by enhancing the nucleofugality of the leaving group.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.