• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.6
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• pp.33-39
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• 2007

In this paper, novel topology for fast response of various loads is proposed. The windup phenomenon appears and results in performance degradation when the PI controller output is saturated. A new anti-windup PI controller is proposed to improve the control performance of variable speed motor drives, and it is experimentally applied to the speed control of a hysteresis current-controlled SRM driven by an asymmetry bridge converter. The experimental results show that the speed response has much improved performance, such as small overshoot and fast settling time, over the conventional PI control.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1574-1579
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• 2016

This paper presents a self-powered sensor-node scheme using a RF wireless power harvesting techniques for improve drone time of flight. Sensor-node that is proposed is turned when two conditions satisfy: The one is input RF ID data from master-node should be same with sensor-node's ID, and the other one is RF wireless power harvesting system is turned on by hysteresis switch. In this paper, master-node's output is 26 dBm at 263 MHz. Maximum RF to DC power conversion efficiency is about 55% at 4-6 dBm input power condition (2 meter from master-node). The maximum RF wireless power harvesting range is about 13 meter form master-node. And power consumption of the sensor-node's load elements such as transmitter, MCU and temperature sensors is approximately average 15 mA at 5.0 V for 10 msec.