• 제목/요약/키워드: Hysteresis curve

검색결과 287건 처리시간 0.029초

자동차용 Leaf 스프링 재질의 마찰 및 마멸 특성 (The Characteristics of Friction and Wear for Automotive Leaf Spring Materials)

  • 오세두;안종찬;박순철;정원욱;배동호;이영제
    • Tribology and Lubricants
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    • 제19권6호
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    • pp.321-328
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    • 2003
  • In the present study, the residual stresses can have a significant on the life of structural engineering components. Residual stresses are created by the surface treatment such as shot peening or deep rolling. The objective of this experimental investigation is to study the influence of friction and wear characteristics due to residual stress under dry sliding condition. Friction and wear data were obtained with a specially designed tribometer. Test specimens were made of SUP9 (leaf spring material) after they were created residual stress by shot peening treatment. Residual stress profiles were measured at surface by means of the X­ray diffraction. Sliding tests were carried out different contact pressure and same sliding velocity 0.035 m/s (50 rpm). Leaf spring assembly test used to strain gauge sticked on leaf spring specimen in order to measure interleaf friction of leaf spring. Therefore, we were obtained hysteresis curve. As the residual stresses of surfaces increased, coefficient of friction and wear volume are decreased, but the residual stresses of surfaces are high, and consequently wear volume do not decreased. Coefficient of friction obtained from leaf spring assembly test is lower than that obtained from sliding test. From the results, structural engineering components reduce coefficient of friction and resistant wear in order to have residual stresses themselves.

적외선 CVD 방법을 이용한 산화막 성장에 $NH_3$가 미치는 영향 (Effects of NH3 on the Growth of Oxide Film by Infrared-CVD Method)

  • 이철승;정관수;김철주
    • 대한전자공학회논문지
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    • 제25권11호
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    • pp.1329-1334
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    • 1988
  • $NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$$Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다.

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수직자기 기록장치에서 기록밀도가 재생전압에 미치는 영향 (Effect of Recording Density On the Reproducin Voltage in Perpendicular Magnetic Recording System)

  • 박관수;이향범;한송엽;이택동;징평우
    • 한국자기학회지
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    • 제1권2호
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    • pp.74-78
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    • 1991
  • 수치해석을 이용하여 자기기록장치를 구성하는 여러 요소들이 정보의 기록 또는 재생에 미치는 영향을 해석할 수 있는 방법을 기술하고 이것을 수직자기기록장치에 적용하여 기록밀도의 변화에 따른 재생전압의 형태을 구하였다. 자기기록장치에서 정보가 기록되는 것은 기록매체의 히 스테리시스현상에 기인하는 것이므로 수치해석시 히스테리시스 특성을 고려해 주어야 한다. 본 논 문에서는 Preisach 모텔과 유한요소법을 이용하여 히스테리시스 특성을 포함하는 자기기록장치의 기록 및 재생의 전과정을 해석할수 있는 수치해석 기법을 확립하고, 이 방법으로 자기기록장치의 여러요소에 대한 영향을 구할수 있음을 보이기 위하여 이것을 수직자기 기록장치에 적용하여 기록 밀도가 17[KFRP]에서 254[KFRPI]까지 증가할때 기록과정에서 주어진 전류파형에 대하여 매체에 기록된 자화량을 구하고, 재생과정에서 헤드에 유기되는 전압을 기록밀도 증가에 따른 재생전압크기 의 변화를 구하였다.

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에너지 개념에 기초한 액상화 평가방법에 관한 연구 (Evaluation of Liquefiable Soils by Energy Concept)

  • 김수일;유정선;박근보;박성용
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2006년도 춘계 학술발표회 논문집
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    • pp.590-599
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    • 2006
  • In this study, Liquefaction characteristics of saturated sand under various dynamic loadings such as sinusoidal loading, increasing wedge loading, and real earthquake loading were investigated focusing on the dissipated energy. From the results of cyclic triaxial test, liquefaction resistance strength was calculated by the concept of energy according to the type of input loading. Liquefaction resistance strength was expressed in accumulated dissipated energy calculated from stress-strain curve(hysteresis loop). The dissipated energy according to loading type was compared and the energy-based evaluation was proposed. The procedures are presented in terms of normalized energy demand(NED), normalized energy capacity(NEC), and factor of safely, where NED is the load imparted to the soil by the loading(both amplitude and duration), NEC is the demand required to induce liquefaction, and factor of safely is defined as the ratio of NEC and NED.

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이방향 여자형 SST를 이용한 이방성 전기강판의 인가자계 방향에 따른 2차원 자계특성 측정 (Measurement of 2 Dimensional Magnetic Property of Grain-oriented Electrical Steel Sheet According to Exciting Field Direction using SST with 2 Axes Excitation)

  • 음영환;김홍정;홍선기;신판석;고창섭
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제55권5호
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    • pp.250-257
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    • 2006
  • It is well known that Grain-oriented electrical steel sheets have two dimensional magnetic properties according to the direction of exciting field such as non-linear phase difference between magnetic flux density and magnetic field intensity vectors, different iron loss and permeability even when an alternating magnetic field is applied. The measurement and application of the two dimensional magnetic properties of the Grain-oriented electrical steel sheets, therefore, are very important for the design and precise performance analysis of electric machines made of them. As the direction of exciting field changes, in this paper, the two dimensional magnetic properties of a Grain-oriented electrical steel sheet, i.e., non-linear B-H curves, phase difference between B and H, and iron loss characteristics, are measured using SST(Single Sheet Tester) which has two axes excitation. The measured results are presented in two ways: using $(B,\theta_B)$ method and using hysteresis loops along rolling and transverse directions, respectively.

열적으로 강인한 Molybdenium 게이트-PMOS Capacitor의 분석 (Analysis of PMOS Capacitor with Thermally Robust Molybdenium Gate)

  • 이정민;서현상;홍신남
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.594-599
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    • 2005
  • In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
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    • 제1권1호
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    • pp.40-44
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    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

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(Na,K)$NbO_3$ 계의 무연 압전체에서 cu 산화물 도핑에 따른 특성 평가 (Characterization of (Na,K)$NbO_3$-Based Ph-free Piezoelectrics Doped with Cu-oxides)

  • 이윤기;류성림;어순철;권순용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.324-324
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    • 2010
  • 최근에는 압전체의 환경오염 문제의 해결 및 가격경쟁력을 갖추기 위해서 비납계 압전체에 대한 연구가 활발히 진행되고 있다. (Na,K)$NbO_3$ 계는 페로브스카이트 구조를 가지는 비납계 세라믹스로 현재 가장 많이 연구되고 있는 물질 중의 하나이다. 본 연구에서는 압전성이 우수한 $(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.9}Ta_{0.04}Sb_{0.06})O_3$ 조성에 CuO, $Cu_2O$ 등의 Cu 산화물을 첨가하였을 때의 전기기계결합계수, 기계적품질계수, 비유전율, 압전전하상수, 문극-전계 이력곡선 (P-E hysteresis curve) 등을 변화를 평가하고자 하였다.

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유연식 라이저에 대한 유한요소법과 이론적 방법에 의한 구조 거동의 비교 연구 (A Comparison Study of Structure Behavior of Flexible Riser Using Numerical and Theoretical Methods)

  • 임기호;장범선;유동현
    • 대한조선학회논문집
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    • 제53권4호
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    • pp.258-265
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    • 2016
  • A flexible riser consists of several layers which have different materials, shapes and functions. The layers designed properly can take the design load safely, and each property of layer provides a complexity of flexible riser. Such complexity/unit-property is an input for global analysis of flexible riser. There are several approaches to calculate the complexity of flexible riser, those are experimental, numerical and theoretical methods. This paper provides a complexity from numerical and theoretical analysis for 2.5 inch flexible riser of which details and the experimental data are already produced under tension, external pressure, and bending moment. In addition, comparison of stiffness and stress are also provided. Especially, analysis of stress could lead to researches on ultimate strength or fatigue strength of flexible risers.

Preparation of $Ba_{1-x}Sr_xTiO_3$ thin films by metal-organic chemical vapor deposition and electrical properties (Preparation of $Ba_{1-x}Sr_xTiO_3$thin films by metal by metal-organic chemical vapor deposition and electrical properties.)

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Ho-Gi
    • 한국진공학회지
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    • 제5권1호
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    • pp.62-66
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    • 1996
  • $(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

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