• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.48-57
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• 2013

This paper presents a power management system of the dye-sensitized solar cell (DSSC) for ubiquitous sensor network (USN) applications. The charge pump with a luminance-controlled oscillator regulates the load impedance of the DSSC to track the maximum power point (MPP) under various light intensities. The low drop-out regulator with a hysteresis comparator supplies intermittent power pulses that are wide enough for USN to communicate with a host transponder even under dim light conditions. With MPP tracking, approximately 50% more power is harvested over a wide range of light intensity. The power management system fabricated using $0.13{\mu}m$ CMOS technology works with DSSC to provide power pulses of $36{\mu}A$. The duration of pulses is almost constant around $80{\mu}s$ (6.5 nJ/pulse), while the pulse spacing is inversely proportional to the light intensity.

• 한국산업융합학회 논문집
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• 제24권5호
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• pp.641-644
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• 2021

Wearable devices and IoT are being utilized in various fields, where all systems are developing in the direction of multi-functionality, low power consumption, and high speed. In this paper, we propose a DC -DC Step-down C onverter for IoT smart devices. The proposed DC -DC Step-down converter is composed of a control block of the power supply stage. It also consists of an overheat protection circuit, under-voltage protection circuit, an overvoltage protection circuit, a soft start circuit, a reference voltage circuit, a lamp generator, an error amplifier, and a hysteresis comparator. The proposed DC-DC converter was designed and fabricated using a Magnachip / Hynix 180nm CMOS process, 1-poly 6-metal, the measured results showed a good match with the simulation results.

• 전기전자학회논문지
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• 제14권2호
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• pp.51-57
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• 2010

대형 TFT LCD 판넬의 감마보정전압을 구동하기 위한 레일-투-레일 고전압 CMOS 완충 증폭기를 제안하였다. 이 회로는 단일 전압하에서 동작하고 18V 전압원에서 0.5mA 의 전류소비특성을 나타내며 8비트/10비트 고해상도 TFT LCD 판넬의 감마보정 전압 구동을 위하여 설계하였다. 이 회로는 높은 slew rate, 0.5mA의 정적 전류특성을 나타내며 1k$\Omega$의 저항성/용량성 부하구동 능력을 가지고 있다. 또한 넓은 출력 공급범위를 지니며, 5mA의 출력 정전류를 내보낼 경우 50mV미만의 옵셋전압 특성을 가진다. 또한, 용량성 부하 구동시 입력기준 옵셋전압이 2.5mV 미만인 좋은 특성을 나타낸다. 본 논문에서는 넓은 스윙입력범위와 출력 동작 범위을 얻기 위해 전류미러형 n-채널 차동증폭기, p-채널 차동증폭기, AB-급 푸쉬-풀 출력단, 히스테리시스 비교기를 사용한 입력레벨 검출기 등을 사용하였다. 제안된 회로는 고전압 디스플레이 구동 IC에 사용하기 위해 0.18um 18V 고전압 CMOS 공정기술에 의해 제작되었다. 제안된 회로는 8~18V의 공급 전압 범위에서 동작한다.