• 한국수소및신에너지학회논문집
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• 제16권2호
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• pp.122-129
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• 2005

The characteristics of hydrogen storage have been investigated in the Ti-Cr-Mo and Ti-Cr-V ternary alloys with bcc structure. The alloys were melted by arc furnace and remelted 4-5 times for homogeneity. The lattice parameters, microstructures and phases of the alloys were examined by SEM, EDX and XRD, and the Pressure-Composition isotherms of the alloys were measured. From these data the relationship of the maximum and effective hydrogen storage capacities vs. chemical composition, lattice parameter and the radius of tetrahedral site were analyzed and discussed. The results showed that all of these alloy, in the range of the this study, had mainly bcc solid solutions with small amount of Ti segregation due to a lower melting point of Ti compared with other elements. Lattice parameters of the alloys were very near to the atomic average values of lattice parameters of the constituent elements. It was also found that maximum hydrogen storage capacities of the Ti-Cr-Mo alloys increased with increasing Ti content and the radius of tetrahedral site but the effective hydrogen storage capacities decreased after showing the maximum. The hydrogen storage capacities of the Ti-Cr-V alloys were almost same even though the V contens were quite different from alloy to alloy and this could be attributed to the almost same Ti/Cr ratio of the alloys. The maximum effective hydrogen storage capacity of the Ti-Cr-Mo alloys was revealed at Ti content of about 40${\sim}$50 at% and radius of tetrahedral site of 0.43${\sim}$0.45 nm. The Ti-Cr-V alloys showed the hydrogen storage capacities of 3.0 wt% and effective hydrogen storage capacities of 1.5 wt%.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• 한국표면공학회지
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• 제27권4호
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• 한국수소및신에너지학회논문집
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• 제22권5호
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• pp.686-698
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• 2011

Mathematical models for char-slag interaction and near-wall particle segregation developed by Montagnaro et. al. were applied to predict various aspects of coal gasification in an up-flow entrained gasifier of commercial scale. For this purpose, some computer simulations were performed using gPROMS as the numerical solver. Typical design parameters and operating conditions of the commercial gasifiers were used as input values for the simulation. Development of a densely dispersed phase of solid carbon was found to have a critical effect on both carbon conversion and ash flow behavior. In general, such a slow-moving phase was turned out to enhance carbon conversion by lengthening the residence time of char or soot particles. Furthermore, it was also found that guiding the transfer of char or soot into the closer part of the wall to coal burner is favorable in terms of gasification efficiency and vitrified ash collection. Finally, to a certain degree densely dispersed phase of carbon showed an yield-enhancing effect of syngas.

• 한국표면공학회지
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• 제38권1호
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Journal of Welding and Joining
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• 제32권5호
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• pp.21-25
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• 2014

Oil and gas fields were left unexploited which deemed too deep and sour. New developing markets are emerging in this part and pipe manufacturers need demanding requirements in the combination of sour service requirements with heavier wall thickness required to cope with increasing water depths. Whilst, the strength and fracture toughness needed to meet the strict requirements In order to deliver the optimum sour properties in the final pipe, attention needs to be paid to each stage throughout the process from steel making. The main key during steel making is strengthening, securing mechanical properties and suppression of center segregation by adding proper chemical elements and controlling water cooling and plate rolling. Additionally in welding, it is required to prevent HAZ softening by high heat input during welding of heavy thick pipes and hydrogen assisted cracking in high strength steels with hard phases. In this paper, we introduce markets of sour resistant linepipe steels and in response to this, have a look in the development trend of sour resistant linepipe steels and its sour characteristics in welded joints.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• 한국수소및신에너지학회논문집
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• 제10권2호
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• pp.119-130
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• 1999

$Mg_2Ni_{1-x}{^{57}}Fe_x$(x=0.015, 0.03, 0.06, 0.12 and 0.24)합금을 제작하여 $M{\ddot{o}}ssbauer$ 공명에 의한 연구를 하였다. x=0.015, 0.03 합금의 $M{\ddot{o}}ssbauer$ spectrum은 2개의 doublet(doublet 1, 2)을, x=0.06 합금의 spectrum은 2개의 doublet(doublet 1, 2)과 1개의 six-line을, 그리고 x=0.12, 0.24 합금의 spectrum은 six-line만 보인다. x=0.015, 0,03, 0.06 합금의 doublet 1은, 초 상자성 거동을 보여주는 과잉으로 존재하는 일부의 철 때문에 생기는 것으로 판단된다. doublet 2는, $Mg_2Ni$ 상의 Ni에 치환된 철에 기인한 것으로 판단된다. doublet 2의 isomer shift 크기 (0,24 ~ 0.28 mm/s)로 보아 $Fe^{+3}$로 존재함을 추측할 수 있다. 또한 doublet 2의 quadrapole splitting이 영이 아님으로부터 Fe 주위의 전자 배열이 비대칭을 이루고 있음을 알 수 있고, 그 크기 (1.20 ~ 1.38 mm/s)는 산화수 +3의 quadrapole splitting 값에 아주 가까운 값이다. 자기적 초미세 상호 작용을 보여주는 six-line은 합금 속에 들어가지 않는 철 때문에 생긴다. 수소화물화 반웅시킨 x=0.015, 0.03 합금의 $M{\ddot{o}}ssbauer$ spectrum이 six-line을 보였는데, 이로부터 수소화물화 반응으로 인하여 Fe이 편석되었음을 알 수 있다. 수소화물화 반응후 $M{\ddot{o}}ssbauer$ spectrum, 자기장의 함수로서 자화의 변화 측정, Auger electron spectroscopy, electron diffraction pattern 분석 결과, Ni의 편석과 MgO의 형성을 보여주었는데, 이는 수소 속에 들어 있는 미량의 산소가 $Mg_2Ni$와 반응하여 야기된 현상으로 생각된다.

• 한국분말재료학회지
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• 제17권4호
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• pp.312-318
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• 2010

High speed steels (HSS) were used as cutting tools and wear parts, because of high strength, wear resistance, and hardness together with an appreciable toughness and fatigue resistance. Conventional manufacturing process for production of components with HSS was used by casting. The powder metallurgy techniques were currently developed due to second phase segregation of conventional process. The powder injection molding method (PIM) was received attention owing to shape without additional processes. The experimental specimens were manufactured with T42 HSS powders (59 vol%) and polymer (41 vol%). The metal powders were prealloyed water-atomised T42 HSS. The green parts were solvent debinded in normal n-Hexane at $60^{\circ}C$ for 24 hours and thermal debinded at $N_2-H_2$ mixed gas atmosphere for 14 hours. Specimens were sintered in $N_2$, $H_2$ gas atmosphere and vacuum condition between 1200 and $1320^{\circ}C$. In result, polymer degradation temperatures about optimum conditions were found at $250^{\circ}C$ and $480^{\circ}C$. After sintering at $N_2$ gas atmosphere, maximum hardness of 310Hv was observed at $1280^{\circ}C$. Fine and well dispersed carbide were observed at this condition. But relative density was under 90%. When sintering at $H_2$ gas atmosphere, relative density was observed to 94.5% at $1200^{\circ}C$. However, the low hardness was obtained due to decarbonization by hydrogen. In case of sintering at the vacuum of $10^{-5}$ torr at temperature of $1240^{\circ}C$, full density and 550Hv hardness were obtained without precipitation of MC and $M_6C$ in grain boundary.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.