• Title/Summary/Keyword: Hydrofluorosilicic acid($\textrm{H}_2\textrm{SiF}_6$)

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Preparation of Silicon Oxide Thin Film using Hydrofluorosilicic Acid (규불화수소산을 이용한 실리콘 산화물 필름 제조에 관한 연구)

  • Park, Eun-Hui;Jeong, Heung-Ho;Im, Heon-Seong;Hong, Seong-Su;No, Jae-Seong
    • Korean Journal of Materials Research
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    • v.9 no.4
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    • pp.414-418
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    • 1999
  • Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

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