• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권6호
• /
• pp.802-809
• /
• 2014

This paper presents a dual-mode bias modulator (BM) for complementary metal oxide semiconductor (CMOS) power amplifiers (PAs). The BM includes a hybrid buck converter and a normal buck converter for an envelope tracking (ET) mode for high output power and for an average power tracking (APT) mode for low output power, respectively. The dual-mode BM and CMOS PA are designed using a $0.18-{\mu}m$ CMOS process for the 1.75 GHz band. For the 16-QAM LTE signal with a peak-to-average power ratio of 7.3 dB and a bandwidth of 5 MHz, the PA with the ET mode exhibited a poweradded efficiency (PAE) of 39.2%, an EVM of 4.8%, a gain of 19.0 dB, and an adjacent channel leakage power ratio of -30 dBc at an average output power of 22 dBm, while the stand-alone PA has a PAE of 8% lower at the same condition. The PA with APT mode has a PAE of 21.3%, which is an improvement of 13.4% from that of the stand-alone PA at an output power of 13 dBm.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.240.2-240.2
• /
• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• 한국표면공학회지
• /
• 제53권6호
• /
• pp.330-342
• /
• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.183-184
• /
• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 대한방사선치료학회지
• /
• 제30권1_2호
• /
• pp.49-63
• /
• 2018

목 적 : 왼쪽 유방암 세기변조방사선 치료 시 Skin flash를 적용함에 있어 치료계획의 변화를 알아보고, 적용하지 않았을 경우와 적용 했을 시 피부선량의 변화를 비교해 보고자 하였다. 또한 Skin flash를 다양한 두께별로 적용하여 두께별 피부선량의 변화를 비교, 분석해 보고, 적절한 Skin flash의 적용에 대해 알아보고자 한다. 대상 및 방법 : 실험대상은 Anthropomorphic phantom을 이용하였고, 치료계획을 위한 영상획득은 전산화 단층촬영(CT)으로 하였다. 전산화치료계획은 Eclipse(ver 13.7.16, Varian, USA)의 RTP 시스템을 이용하여 2 field hybrid IMRT와 6 field static IMRT의 두 가지 치료계획을 하였다. 위의 치료계획을 바탕으로 각 치료계획마다 Skin flash 두께를 0.5 cm, 1.0 cm, 1.5 cm, 2.0 cm, 2.5 cm으로 변경하여 추가치료계획을 수립하였고, 추가치료계획에 대해 총 MU값과 최대선량의 변화를 알아보았다. 치료 장비는 $VitalBeam^{TM}$(Varian Medical System, USA)의 6 MV를 이용하였다. 측정 장비는 MOSFET(metal oxide semiconductor field-effect transistor)을 이용하였고, 측정지점은 phantom의 왼쪽 유방의 센터를 기준으로 위(1번), 중간(2번), 아래(3번) 세 부위에 위치시켜 피부선량을 측정하였다. 그리고 인위적으로 좌표를 0.5cm 내측(medial), 외측(lateral)으로 이동시켜 피부선량의 변화를 비교 분석하였다. 결 과 : Skin flash를 적용하지 않은 치료계획 2F-hIMRT, 6F-sIMRT의 측정값을 기준선량으로 하였다. 2F-hIMRT의 1번 측정점 206.7 cGy, 2번 186.7 cGy, 3번 222 cGy였고, 6F-sIMRT의 기준값은 1번 192 cGy, 2번 213 cGy, 3번 215 cGy로 측정되었다. 이 기준값들과 비교하여 2F-hIMRT에서 1번 측정점은 Skin flash 2.0 cm, 2.5 cm 적용시 평균 261.3 cGy로 26.1 %diff로 가장 많은 선량차를 보였고, 2번 측정점은 Skin flash 2.0 cm일 때 평균 197.3 cGy, 5.6 %diff의 선량차가 났고, 3번 측정점은 Skin flash 2.5 cm일 때 최대 245.3 cGy, 10.5 %diff였다. 6F-sIMRT에서는 1번 측정지점이 Skin flash 2.0 cm 적용시에 216.3 cGy, 12.7 %diff로 가장 큰 선량차이를 보였고 측정지점별로 Skin flash 2.5 cm 적용시가 아닌 2.0 cm 적용시 선량차가 가장 크게 나타났다. 2F-hIMRT, 6F-sIMRT에서 각각 내측 0.5 cm 이동 후 Skin flash를 사용하지 않았을 때 측정치는 2F는 기준값과 비교시 1번, 3번 측정지점에서 -75.2 %diff, -70.1 %diff 차이였고, 6F는 1번, 2번, 3번 측정 지점에서 -14.8, -12.5, -21.0 %diff로 처방선량에 미치지 못하는 저선량이 측정되었다. 두 치료계획 모두 Skin flash 두께가 커질수록 총 MU와 최대선량이 증가하는 것으로 나타났고, 몇몇 결과를 제외하면 전체적으로 %diff도 증가했다. 모든 조건에서 0.5 cm의 Skin flash 두께 사용이 기준값의 피부선량과 약 20 % 이하의 차이로 가장 적은 것으로 나타났다. 결 론 : 결과에 따라 Skin flash의 두께를 0.5 cm으로 최소화 하는 것이 최대선량이나 MU의 증가를 최소화할 수 있었고, 기준이 되는 치료계획과도 가장 적은 피부선량차이를 보였기에 0.5 cm으로 최소화 하여 적용하는 것이 가장 이상적이라 할 수 있을 것이다. 또한 Skin flash 두께를 무한정 크게 한다고 해서 MU나 최대선량, 피부선량차가 증가하지 않고 수렴한다는 것을 알 수 있었다. 그러므로 유방암 환자의 호흡에 의한 PTV의 변화와 여러 오차의 인자들을 고려한다면 0.5~1.0 cm Skin flash 범위에서 Skin flash를 사용한다면 적용하지 않는 것보다는 더 많은 이점이 있을 것으로 사료된다.