• Title/Summary/Keyword: Hybrid UV Lithography

Search Result 5, Processing Time 0.021 seconds

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures (하이브리드 자외선 노광법을 이용한 3차원 고종횡비 미소구조물 제작)

  • Park, Sungmin;Nam, Gyungmok;Kim, Jonghun;Yoon, Sang-Hee
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.40 no.8
    • /
    • pp.731-736
    • /
    • 2016
  • Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

UV/Thermal Hybrid Nanoimprint System for Flexible Substrates (유연기판을 위한 UV/Thermal 하이브리드방식 나노임프린트 시스템)

  • Lim, Hyung-Jun;Lee, Jae-Jong;Choi, Kee-Bong;Kim, Gee-Hong;Ahn, Hyun-Jin;Ryu, Ji-Hyeong
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.20 no.3
    • /
    • pp.245-250
    • /
    • 2011
  • An UV/thermal hybrid nanoimprint lithography system was designed and implemented for the pattern transfer to flexible substrates. This system can utilize a plate stamp, roll stamp, and film stamp. For all cases of using those stamps, this system is also switchable an UV or thermal nanoimprint lithography mode. This paper shows how to design the heating and UV curing plates and proposes how to change them easily. Because the pressure condition and the speed of the press roller varies by the characteristics of the stamp and substrate, all the parameters related to the nanoimprint lithography have to adjustable. Some transferred patterns are shown in this paper to verify the performance of the hybrid nanoimprint lithography system. The flexible substrates with nano-scale patterns on them will be key components for next generation technologies such as flexible displays, bendable semi-conductors, and solar cells.

Sub-100nm Hybrid stamp fabrication by Hot embossing (Hot embossing 공정을 이용한 100nm 급 Hybrid stamp 제작)

  • Hong S.H.;Yang K.Y.;Lee Heon
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2005.06a
    • /
    • pp.1168-1170
    • /
    • 2005
  • Nanoimprint Lithography(NIL) has increasingly been recognized as a key manufacturing technology for nanosized feature. One of the most important task for nanoimprint lithography is to provide the imprinting stamp with low price. The Stamp fabricated with Si based material by e-beam lithography, RIE is extremely expensive and its throughput is very limited and PDMS replica is too soft to hold high imprinting pressure.(>5atm) In this study, we present the imprinting stamp which can be easily replicated from original mold and is based on PVC film. Replication of original Si mold to PVC film was done by Hot embossing technique, ($120^{\circ}C$ of Temperature, 20 atm applied) As small as 100nm patterns were successfully transferred into PVC film. The size of stamp was up to 100mm in diameter.

  • PDF

UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer (UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성)

  • Moon Kanghun;Shin Subum;Park In-Sung;Lee Heon;Cha Han Sun;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.12 no.4 s.37
    • /
    • pp.275-280
    • /
    • 2005
  • We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

  • PDF

UV 나노임프린트 리소그래피의 Quartz 기판상의 Resin mold 제거를 위한 Hybrid 세정공정에 관한 연구

  • Jo, Yun-Sik;Kim, Min-Su;Gang, Bong-Gyun;Kim, Jae-Gwan;Lee, Byeong-Gyu;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2012.05a
    • /
    • pp.81.1-81.1
    • /
    • 2012
  • 나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

  • PDF