• Fibers and Polymers
• /
• v.2 no.4
• /
• pp.203-211
• /
• 2001

Residual stresses were predicted by a flow analysis in the mold cavity and residual stress distribution in the injection molded product was measured. Flow field was analyzed by the hybrid FEM/FDM method, using the Hele Shaw approximation. The Modified Cross model was used to determine the dependence of the viscosity on the temperature and the shear rate. The specific volume of the polymer melt which varies with the pressure and temperature fields was calculated by the Tait\`s state equation. Flow analysis results such as pressure, temperature, and the location of the liquid-solid interface were used as the input of the stress analysis. In order to calculate more accurate gap-wise temperature field, a coordinate transformation technique was used. The residual stress distribution in the gap-wise temperature field, a coordinate transformation technique was used. The residual stress distribution in the gap-wise direction was predicted in two cases, the free quenching, under the assumption that the shrinkage of the injection molded product occurs within the mold cavity and that the solid polymer is elastic. Effects of the initial flow rate, packing pressure, and mold temperature on the residual stress distribution was discussed. Experimental results were also obtained by the layer removal method for molded polypropylene.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.1
• /
• pp.48-61
• /
• 1989

In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.