• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.337-341
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• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.224-228
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• 2011

This research, integratable capacitive relative humidity sensor was produced using polyimide on glass substrate. Also, at the time of upper electrode formation, upper electrode grain size was affected by giving changes to sputtering condition. Through this analyzing electrical characteristics affect from capacitive relative humidity sensor was possible. Capacitance of capacitive relative humidity sensor was 330 pF, linearity of 0.6%FS and it showed less than 3% of low hysterisis. Specially, hysterisis was affected more from interface than interstitial. Also was affected by the grain size which is one of the formation condition of upper electrode.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.1
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• pp.26-30
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• 2006

For the purpose of developing capacitive humidity sensor having interdigital electrodes, interdigital electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thickness. For the development of ASIC, switched capacitor signal processing circuits for capacitive humidity sensor were designed and simulated by Cadence using $0.25{\mu}m$ CMOS process parameters. The signal processing circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control. The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is $0.4%R.H./^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of $3%R.H.{\sim}98%R.H.$. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigital electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.119-123
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• 2015

This paper presents the inkjet-printed flexible temperature and humidity sensor(F-TH sensor) using PEDOT:PSS. The series, mesh and parallel type sensing element using PEDOT:PSS ink was printed on the overhead projector(OHP) film. The fabricated sensor of each structure has the temperature sensitivity of $140{\Omega}/^{\circ}C$, $29{\Omega}/^{\circ}C$ and $1.4{\Omega}/^{\circ}C$ with linearity, respectively. Also the fabricated sensor was not only possible to measure a temperature, but also to detect humidity. The humidity sensitivity of $400{\Omega}/%RH$, $3.4{\Omega}/%RH$ and $3{\Omega}/%RH$ with linearity, respectively. The fabricated F-TH sensor is expected for the various applications such as electronic devices, bio-healthcare, industrial field.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1388-1390
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• 1994

A polyimide-based capacitive humidity sensor has been designed and fabricated using silicon integrated-circuit technology, and its performance measured. The sensor showed excellent linearity, low temperature coefficient, and low hysteresis over a wide range of relative humidity and temperature. The signal conditioning circuits for detecting relative humidity and converting it to voltage have been developed based on a charge redistribution between capacitors using switched -capacitors.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.627-632
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• 2020

In this paper, we have studied a development of a humidity sensor using a microwave sensor based on a microstrip defected ground structure coated with polyvinyl alcohol. A high-sensitivity microwave sensor, which is sensitive to the changes in the permittivity of the material under test, is designed by adding an interdigital capacitor-shaped defected ground structure to the ground plane of a microstrip line. Polyvinyl alcohol, a polymer material whose permittivity varies depending on humidity, is coated with a thin thickness on the defected ground structure of the proposed microwave sensor, and the changes in the resonance frequency and magnitude of the transmission coefficient for the microwave sensor according to humidity are measured. When relative humidity increases from 40% to 80% in 10% increments at a temperature of 25 degrees using a temperature/humidity chamber, the resonant frequency of the transmission coefficient decreases from 1.475 GHz to 1.449 GHz, and the magnitude is increased from -32.90 dB to -25.67 dB.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.93-99
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• 1996

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

• Macromolecular Research
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• v.17 no.4
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• pp.227-231
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• 2009

New polyelectrolytes derived from poly(amide-sulfone)s and 1,5-dibromopentane were simultaneously fabricated on the electrode by the crosslinking reaction. The substrate was pretreated with a bromoalkyl-containing, silane-coupling agent to anchor the humidity-sensitive membrane to the substrate through the covalent bond. When the resistance dependence on the relative humidity of the crosslinked poly(amide-sulfone)s was measured, the resistance varied by three orders of magnitude between 20%RH and 90%RH, which was the required RH range for a humidity sensor operating at ambient humidity. Their water durability, long-term stabilities under various environments, hysteresis and response and recovery times were measured and evaluated as a humidity-sensing membrane.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.5
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• pp.491-499
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• 2014

It is important to accurately measure and control the relative humidity of humidified gas entering a PEM (polymer electrolyte membrane) fuel cell stack because the level of humidification strongly affects the performance and durability of the stack. Humidity measurement devices can be used to directly measure the relative humidity, but they cost much to be equipped and occupy spaces in a fuel cell system. We present soft sensors for predicting the relative humidity without actual humidity measuring devices. By combining FIR (finite impulse response) model with PLS (partial least square) and SVM (support vector machine) regression models, DPLS (dynamic PLS) and DSVM (dynamic SVM) soft sensors were developed to correctly estimate the relative humidity of humidified gases exiting a planar-type membrane humidifier. The DSVM soft sensor showed a better prediction performance than the DPLS one because it is able to capture nonlinear correlations between the relative humidity and the input data of the soft sensors. Without actual humidity sensors, the soft sensors presented in this work can be used to monitor and control the humidity in operation of PEM fuel cell systems.