• Title/Summary/Keyword: Horizontal Misfit

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Finite Element Analysis of Bone Stress Caused by Horizontal Misfit of Implant Supported Three-Unit Fixed Prosthodontics (3차원 유한요소법에 의한 임플란트 지지 3본 고정성 가공 의치의 부적합도가 인접골 응력에 미치는 영향 분석)

  • Lee, Seung-Hwan;Jo, Kwang-Hun
    • Journal of Dental Rehabilitation and Applied Science
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    • v.28 no.2
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    • pp.147-161
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    • 2012
  • This study is to assess the effect of horizontal misfit of an implant supported 3-unit fixed prosthodontics on the stress development at the marginal cortical bone surrounding implant neck. Two finite element models consisting of a three unit fixed prosthodontics and an implant/bone complex were constructed on a three dimensional basis. The three unit fixed prosthodontics were designed either shorter (d=17.8mm model) or longer (d=18.0mm model) by 0.1mm than the span of two implants placed at the mandibular second premolar and second molar areas 17.9mm apart. Fitting of the fixed prosthodontics onto the implant abutments was simulated by a total of 6 steps, that is to say, 0.1mm displacement per each step, using DEFORM 3D (ver 6.1, SFTC, Columbus, OH, USA) program. Stresses in the fixed prosthodontics and implants were evaluated using von-Mises stress, maximum compressive stress, and radial stress as necessary. The d=17.8mm model assembled successfully on to the implant abutments while d=18.0mm model did not. Regardless if the fixed prosthodontics fitted onto the abutments or not, excessively higher stresses developed during the course of assembly trial and thereafter. On the marginal cortical bone around implants during the assembly, the peak tensile and compressive stresses were as high as 186.9MPa and 114.1MPa, respectively, even after the final sitting of the fixed prosthodontics (for d=17.8mm model). For this case, the area of marginal bone subject to compressive stresses above 55MPa, equivalent of the $4,000{\mu}{\varepsilon}$, i.e. the reported threshold strain to inhibit physiological remodeling of human cortical bone, extended up to 2mm away from implant during the assembly. Horizontal misfit of 0.1mm can produce excessively high stresses on the marginal cortical bone not only during the fixed prosthodontics assembly but also thereafter.

Determination of Weighting Factor in the Inverse Model for Estimating Surface Velocity from AVHRR/SST Data (AVHRR/SST로 부터 표층유속을 추정하기 위한 역행렬 모델에서 가중치의 설정)

  • Lee, Tae-Shin;Chung, Jong-Yul;Kang, Hyoun-Woo
    • 한국해양학회지
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    • v.30 no.6
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    • pp.543-549
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    • 1995
  • The inverse method has been used to estimate a surface velocity field from sequential AVHRR/SST data. In the model, equation system was composed of heat equation and horizontal divergence minimization and the velocity field contained in the advective term of the heat equation, which was linearized in grid system, was estimated. A constraint was the minimization of horizontal divergence with weighting factor and introduced to compensate the null space(Menke, 1984) of the velocity solutions for the heat equation. The experiments were carried out to set up the range of weighting factor and the matrix equation was solved by SVD(Singular Value Decomposion). In the experiment, the scales of horizontal temperature gradient and divergence of synthetic velocity field were approximated to those of real field. The neglected diffusive effect and the horizontal variation of heat flux in the heat equation were regarded as random temperature errors. According to the result of experiments, the minimum of relative error was more desirable than the minimum of misfit as the criteria of setting up the weighting factor and the error of estimated velocity field became small when the weighting factor was order of $10^{-1}$

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Validation of the Korean Functional Gait Assessment in Patients With Stroke (뇌졸중 환자를 대상으로 실시한 한글판 기능적 보행평가의 타당도)

  • Park, So-yeon
    • Physical Therapy Korea
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    • v.23 no.2
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    • pp.35-43
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    • 2016
  • Background: The Functional Gait Assessment (FGA) was developed to measure of gait-related activities. The FGA was translated in Korean but only a few psychometric characteristics had been studied. Objects: The purpose of this study was to evaluate the validity and reliability of the Korean version of FGA scale using Rasch analysis. Methods: The study included 120 patients with stroke (age range=30~83 years; mean${\pm}$standard deviation=$58.3{\pm}11.1$). The FGA and Berg Balance Scale were performed, and were analysed for dimensionality of the scale, item difficulty, scale reliability and separation, and item-person map using Rasch analysis. Results: The 4 rating scale categories of FGA were satisfied with optimal rating scale criteria. The most items of the FGA showed sound item psychometric properties except 2 items ('gait with the horizontal head turns', and 'gait with narrow base of support'), and the 2 misfit items were excluded for all further analyses. The 8 items were arranged in order of difficulty. The most difficult item was 'gait with eyes closed', the middle difficult item was 'gait level surface', and the easiest item was 'gait with vertical head turns.' A person separation reliability was .93 and the person separation index was 3.57. Conclusion: This study suggests that the 8-item Korean FGA are valid measure of assess the gait-related balance performance, and to set the goal of rehabilitation plan in patient with stroke.

The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • v.28 no.4
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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