• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.63-63
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• 2011

비정질 반도체/절연체의 직류와 교류 전도도 스펙트럼은 주파수에 대한 거듭제곱의 법칙 (power-law)을 따르는 보편성이 있음이 확인되었다. 이러한 보편성은 다양한 비정질 반도체/절연체 물질에서 공통적으로 관찰되었으며 현재까지 이 보편성의 물리학적 원인이 정확히 규명되지 않고 있다. 이 보편성을 설명하기 위한 모델로서 비정질 반도체/절연체 내의 전자/정공의 호핑 전도기구 (hopping conduction mechanism)가 제시된 바 있으며 다양한 비정질 시스템의 전도도 스펙트럼 해석에 인용되고 있다. 그러나 직.교류 전도기구 사이의 상이함에 대한 이견이 있으며 현재까지 정확히 규명된 바 없다. 본 연구에서는 비정질 GeSe 반도성 물질의 전도도 스펙트럼을 10 Hz-1 MHz 주파수 대역에서 측정하였으며 이를 위해 백금 상.하부 전극을 갖는 크로스바(crossbar)형의 금속-절연체-금속구조의 2단자 소자를 제작하였다. 측정 스펙트럼으로부터 본 연구의 GeSe 물질이 앞서 언급한 비정질 물질의 보편성에 부합함을 확인하였으며 스펙트럼 내의 직류와 교류 성분을 명확히 분리할 수 있었다. 직.교류 전도도 스펙트럼의 명확한 기구 분리를 위하여 4개의 상이한 면적을 갖는 크로스바에 대한 측정을 실시하였으며 그 결과로 직.교류 전도도의 상이한 면적 의존성을 관찰하였고 이를 근거로 직.교류 전도도가 서로 다른 전도기구에 기인함을 간접적으로 알 수 있었다. GeSe의 전도도 스펙트럼의 온도 의존성 실험을 위해 시편의 온도를 20-300 K 범위에서 변화시키며 전도도 스펙트럼을 측정하였으며 이를 통해 교류 전도도 스펙트럼 내에 상이한 두 개의 전도 기구가 혼재해있음을 규명하였다.

• Journal of the Korean Chemical Society
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• v.33 no.5
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• pp.445-451
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• 1989

A series of solid solutions with formula $Er_{1-x}Sr_xFeO_{3-y}, where x is from 0.0 to 1.0, has been synthesized by heating at $1200^{\circ}C$ for 24 hours. X-ray diffraction shows these samples to be orthorhombically distorted perovskites for compositions up to x = 0. 6 and apparantly simple cubic perovskite structures from $0.8{\leq}x{\leq}1.0$. Lattice volumes are increased with the introduction of Sr. The mixed valence state of two kinds of Fe ion in these ferrite systems is analyzed by the Mohr salt titration method. Mossbauer spectra measured at room temperature for x = 0.0 and 0.5 compositions shows hyperfine splitting for iron (III) due to magnetic ordering and indicates that these samples contain octahedrally and tetrahedrally coordinated iron sites. Electrical conductivity measurements indicate that conduction in these samples apparantly occurs over the octahedral sites by a hopping mechanism.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.10
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• pp.914-924
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• 1991

It has been generally used for PLL(Phase Locked Loop) to be synthesized randomly chosen frequency state, but the PLL locking time was inevitable element. A direct digital synthesizer. Which makes output frequency directly in sine wave by a phase accumulating method, could be leiminate the defect, although a phase distortion in frequency spectrum. In order to improve this disadvantage, the phase accumulating method is reconsidered in the side of he output wave formula expression. A new mechanism is proposed, and it is constructed by a most suitable logic elements. The spectrum of synthesized sine waveform is simulated and compared with a measured value, and it’s the coherence frequency hoppong state with the PN(Pseudo Noise) code sequence is confirmed. In this results, the power levels of phase distortion harmonics are decreased to 10~25dB and bandwidths are increased to 420kHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Bulletin of the Korean Chemical Society
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• v.15 no.3
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• pp.256-260
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• 1994

Perovskite type oxides of the $Sr_xHo_{1-x}FeO_{3-y}$ system with compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at 1200$^{\circ}$C in air. X-ray powder diffraction assigns the compositions with x=0.00 and 0.25 to the orthorhombic crystal system and those with x=0.50, 0.75, and 1.00 to the cubic one. The unit cell volumes of solid solutions increase with x in the system. Nonstoichiometric chemical formulas were determined by Mohr salt titration. The mole ratio of $Fe^{4+}$ ions to total iron ions and the concentration of oxygen ion vacancies increase with x. Mossbauer spectra for the compositions of x= 0.00, 0.25, and 0.50 show six lines indicating the presence of $Fe^{3+}$ ions in the octahedral site. However, the presence of $Fe^{4+}$ ions may also be detected in the spectra for the compositions with x=0.25 and x=0.50. In the compositions with x=0.75 and 1.00, single line patterns show also the mixed valence state of $Fe^{3+}$ and $Fe^{4+}$ ions. The electrical conductivity in the temperature range of -100$^{\circ}$C to 100$^{\circ}$C under atmospheric air pressure increases sharply with x but the activation energy decreases with the mole ratio of $Fe^{4+}$ ion. The conduction mechanism of the perovskite system seems to be hopping of the conduction electrons between the mixed valence iron ions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.78-83
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• 2012

The structural change and the electrical conductivity with Sr content in $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ (LSMCu) were studied. $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ ($0.1{\leq}x{\leq}0.4$) were synthesized by EDTA citric complexing process (ECCP). A decrease in the lattice parameters and lattice volumes was observed with increase of Sr content, and these results were attributed to the increasing $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site. The electrical conductivity measured from $500^{\circ}C$ to $1000^{\circ}C$ was increased with increase of Sr content in the $0.1{\leq}x{\leq}0.3$ composition range, and it was 172.6 S/cm (at $750^{\circ}C$) and 177.7 S/cm (at $950^{\circ}C$, the maximum value) in x = 0.3. The electrical conductivity was decreased in x = 0.4 because of the presence of the second phase in the grain boundaries. The lattice volume was contracted by increase of $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site according to increase of Sr content and the electrical conductivity was increased with increase of charge carriers which were involved in the hopping mechanism.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.617-624
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• 1991

Nonstoichiometric solid solutions of $Y_{1-x}A_xFeO_{3-y}$ (A = Ca, Sr) systems with perovskite structure were prepared for x = 0.00, 0.25, 0.50, 0.75 and 1.00 at 1200$^{\circ}C$ under atmospheric pressure, respectively. Crystallographic structures of the solid solutions of all compositions have been determined by the analysis of X-ray diffraction patterns. Reduced lattice volume of the $Y_{1-x}Ca_xFeO_{3-y}$ system was decreased with increasing x value and that of the $Y_{1-x}Sr_xFeO_{3-y}$ system was increased with increasing the x value. The mole ratios of $ Fe^{4+}$ to $ Fe^{3+}$, ${\tau}$, values in the solid solutions have been determined by Mohr salt's method of analysis and then the mixed valency was identified by Mossbauer spectroscopic analysis at 298 K. The y values were calculated from the x and ${\tau}$, and then nonstoichiometric chemical formulas were fixed. The conduction mechanism could be explained by hopping model of the conduction electrons between the mixed valence states.

• Journal of the Korean Chemical Society
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• v.35 no.2
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• pp.99-104
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• 1991

Nonstoichiometric solid solutions of Sr$_{1+x}Er _{1-x} FeO _{4-y}$ system (x = 0.00, 0.25, 0.50, 0.75 and 1.00) with layered $K_2NiF_4$ type structure were prepared at 1350$^{\circ}$C under atmospheric pressure. By the analysis of X-ray diffraction, the crystallographic structures of the solid solution of all compositions were found to be pseudo-tetragonal system. Nonstoichiometric chemical formulas have been determined by Mohr salt analysis. It shows that the amount of Fe$^{4+}$ increases with increasing x up to 0.50 and then decreases, and the value of oxygen nonstoichiometry increases with increasing x value. Mixed valency states of Fe$^{3+}$ and Fe$^{4+}$ in the sample were identified again by Mossbauer spectroscopic analysis at 298 K. Electrical conductivity varied within the semiconductivity range of 10-2 ∼ 10-7(${\Omega}$-1cm-1), activation energy for electrical conduction decreased with the increment of the mole ratio of Fe$^{4+}$ or ${\tau}$ value. The conduction mechanism could be explained by the hopping model of the conduction electrons between the valency states of Fe$^{3+}$ and Fe$^{4+}$.

• Journal of the Korean Chemical Society
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• v.37 no.11
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• pp.923-928
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• 1993

The series of solid solutions in the $Sr_{1+x}Ho_{1-x}FeO_{4-y}$ (x = 0.00, 0.25, 0.50, 0.75 and 1.00) systems with $K_2NiF_4$ type structure have been prepared at 1550$^{\circ}$C under an atmospheric air pressure. The X-ray powder diffraction spectra of these samples assign that the crystallographic phases are tetragonal system over the whole x range. The lattice volume was increased with increasing the substitution amount of the $Sr^{2+}$ ion. The mole ratio of the $Fe^{4+}$ ion to total iron ions or ${\tau}$ value has been determined by Mohr salt titration of the sample and then the y value was calculated from x and ${\tau}$ values. The ${\tau}$ and y values have been increased with x values. The nonstoichiometric chemical formula are formulated from the general formula of $Sr_{1+x}Ho_{1-x}Fe^3_{1-}\;^+_{\tau}Fe_{\tau}^{4+}O_{4-y}$ replaced by x,${\tau}$ and y values. Mossbauer spectra show the mixed valence state and coordination state of $Fe^{3+}\;and\;Fe^{4+}$ ions. It is found out that the magnetic property of the samples is paramagnetic at room temperature. Electrical conductivity varied within the semiconductivity range of 1.0 to 1 ${\times}\;10^{-9}{\Omega}^{-1}cm^{-1}$. Activation energy of the electrical conductivity was decreased with the $\tau$ value. The conduction mechanism should be explained by the hopping model of the conduction electrons between the valence states of $Fe^{3+}\;and\;Fe^{4+}$ ions.

• Applied Chemistry for Engineering
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• v.8 no.6
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• pp.954-959
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• 1997

The solid solutions of the $Sr_{1-X}M_XFeO_{3-y}$ (x=0.1, 0.2, 0.3, 0.4, 0.5, M=Ca) system having perovskite structures were prepared in air by heat treatment at 1473 K for 18hr. X-ray diffraction assigns cubic system for all the samples and shows that the lattice volume of each system decreases with increasing x value until x=0.3, but increases abruptly from x=0.4. The mole fractions of $Fe^{4+}$ ion($\tau$ value), the amounts of oxygen vacancy (y value) and finally nonstoichiometric chemical formulas for each composition were determined from Mohr salt analysis. TG/DTA thermal analysis (temperature range: 300~1173K) exhibits that 3-y values of the samples having x=0.1 and 0.2, decrease with temperature and increase almost reversibly with decreasing temperature. The samples of $x{\geq}0.3$, however, didn't show the reversible weight change and the 3-y values of them were nearly 2.5 in cooling process. Conductivities of each sample were varied within the semiconductivity range at relatively low temperature. And the conductivity at constant temperature decreases steadily with x value. The conduction mechanism of this ferrite system may be proposed as a hopping model of conducting electrons between the mixed valence states. At high temperature semiconductivity of each sample changed into metallic property.