• Current Applied Physics
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• v.18 no.12
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• pp.1492-1495
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• 2018

This paper studies the influence of temperature on electrical resistivity in ${\alpha}-InAs$ thin films between 30 K-2K based on the analysis of Mott VRH model and ES VRH model. The effect of the interactions between electrons at lower temperature must be considered, therefore, ES VRH conduction will dominate mechanism, and the crossover from Mott to ES VRH conduction is observed about 7 K. Based on available experiment data and VRH conduction model, the parameters of VRH conduction are determined. And the calculated values of $T_C$ are consistent with the experimental results. In addition, $R_M/{\xi}$, ${\Delta}_M/kT$, $R_{ES}/{\xi}$ and ${\Delta}_{ES}/kT$ are satisfied with the validity of Mott and ES models. Furthermore, the temperature dependence of resistivity at low temperature obeys a universal scaling law, which well describes the overall temperature range of VRH conduction. However, the values of $T^{\prime}_M$ from the universal function are two order of magnitudes lower than $T_M$ deduced from fitting experiment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.359-365
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• 1997

$K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.23-26
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• 1981

The electrical conductivity of highly pure polycrystalline $Yb_2O_3$ has been measured from 650 to 105$0^{\circ}C$ under oxygen pressure range of $10^{-5}$ to 102 torr. The conductivity dependence of oxygen pressure in the temperature region from 750 to 105$0^{\circ}C$ is approximated by $\sigma$ $\alpha$ $Po_2^{1/5.3}$. This shows that the conduction mechanism is associated with doubly ionized metal vacancies. Fairly low activation energy and the lack of oxygen pressure dependence are found over the temperature range of 650 to 75$0^{\circ}C$. The conduction mechanism can be explaned by not metal vacancies, but hopping oxygen ions in the oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.371-376
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• 1990

Polyaniline perchlorate (PAP) was synthesized by the chemical oxidation of aniline using ferric perchlorate as a strong oxidant. The electrical conductivity of PAP was measured at temperatures from - 170 to 25$^{\circ}C$. It is suggested from the conductivity measurements that the conduction mechanism for PAP is a polaron hopping conduction. From the dependence of resistivity on the reciprocal temperature, the activation energy was computed to be 0.072 eV. From the comparison of the ESR parameterks and conductivity at 25$^{\circ}C$ for the polyaniline-based conducting polymers, the conductivities of PAP, PATFB and PATS increase with increasing ${\Delta}H_{pp}$, decreasing A/B ratio and decreasing g-value, respectively. It is shown by TGA results for PAP, PATFB and PATS that the maximum weight loss rates (Pr) are 0.185 (at 269$^{\circ}C$ ), 0.366 (at 324$^{\circ}C$) and 0.23 mg/min (at 338$^{\circ}C$), respectively.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.41-46
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• 2019

In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.81-88
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• 1997

Vanadate glasses using $B_2O_3$ as a network former and with CuO additive were mainly investigated in relation to electrical properties. Crystalline phases formed by heat-treatment in each composition were examined and dc electrical conductivity changes of the glasses were analyzed. Crystalline phases were identified as $V_3O_5,\;a-CuV_2O_6\;and\;{\beta}-CuV_2O_6$ by XRD analysis. Crystallization degrees of $V_2O_5$ and ${\beta}-CuV_2O_6$ were little changed with heat-treatment time, but those of ${\alpha}u-CuV_2O_6$ were changed sharply with heat-treatment time. The more crystallization of ${\alpha}u-CuV_2O_6$ occurred, the higher electrical conductivity was observed. Electrical conductivities with $10^{-2}~10^{-4}/{\Omega}/cm$ at room temperature(303K) could be obtained by controlling the glass compositions. The electrical conductivities were increased with increasing of $V_20_5$ content and decreasing of alkality($CuO/B_2O_3$). In this study, electron was proved to be charge carrier by seebeck coefficient measurement. Accordingly, the glasses are believed to be n-type semiconductor. Calculated activation energies for the conduction were in the range 0.098-0.124 eV. Electrical conduction mechanism was small polaron hopping without showing variable range hopping in the temperature range $30~200^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.721-725
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• 2016

This work focuses on the electrical conduction mechanism in a lead free ($Na_{0.5}K_{0.5}NbO_3$ ; NKN) ceramics system with $LiNbO_3$ content of approximately critical concentration $x{\geq}0.2$. Lead free $(1-x)(Na_{0.5}K_{0.5})NbO_3-x(LiNbO_3)$, $NKN-LN_x$ (x = 0.1, 0.2) ceramics were synthesized by solid-state reaction method. Crystal structures are confirmed by X-ray diffraction. The electric-mechanical bond coefficient $k_p$ decreases and the phase transition temperature $T_c$ increases with increasing x content, as determined by dielectric and piezoelectric measurements. The value of the real dielectric constants ${\varepsilon}^{\prime}$ and $k_BT{\varepsilon}^{\prime\prime}$ showed anomalies around $T_c$ ($462^{\circ}C$ in the NKN-LN0.1 and $500^{\circ}C$ in the NKN-LN0.2). For the ionic conduction of mobile ions, the activation energies are obtained as $E_I=1.76eV$ (NKN-LN0.1) and $E_I=1.55eV$ (NKN-LN0.2), above $T_c$, and $E_{II}=0.78$ (NKNL-N0.1) and $E_{II}=0.81$ (NKN-LN0.2) below $T_c$. It is believed that the conduction mechanisms of NKN-LNx ceramics are related to ionic hopping conduction, which may arise mainly due to the jumping of $Li^+$ ions.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.