• Title/Summary/Keyword: Hopping mechanism

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Dielectric Relaxation and Electrical Conduction Properties of La2NiO4+δ Ceramics (La2NiO4+δ세라믹스의 유전이완 및 전기전도특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.21 no.7
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    • pp.377-383
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    • 2011
  • Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

A Study on the Hopping Conducting Mechanism in PAN Carbon Fiber (PAN계 탄소섬유의 Hopping 전도기구에 관한 연구)

  • Han, Se-Won;Lee, Hee-Woong
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.65-67
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    • 1989
  • To study hopping conducting mechanism in PAN(polyacrylonitrile) carbon fiber, the temperature and frequency dependence of electrical conductivity and magnetoresistance characteristics were investigated. Electrical conductivity in the range of $60^{\circ}K-300^{\circ}K$ show VRH(variable range hopping) properties which introduced by Mott's theory, and also such properties can be explained by the frequency dependence of electrical conductivity below $5{\times}10^6$ Hz. The negative magnetoresistance observed below 35KG magnetic field, and the properties difference between M40 and T300 with increasing magnetic field is supposed due to on effect connected with crystalline state and orientation of structure.

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Dynamic Spectrum Sensing and Channel Access Mechanism in Frequency Hopping Based Cognitive Radio Ad-hoc Networks (주파수 홉핑 기반 인지무선 애드 혹 네트워크에서 동적 스펙트럼 센싱 및 채널 엑세스 방안)

  • Won, Jong-Min;Yoo, Sang-Jo;Seo, Myunghwan;Cho, Hyung-Weon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.11
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    • pp.2305-2315
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    • 2015
  • Frequency resource value is growing more and more with the development of the wireless communication. With the advent of the current information society comes a serious shortage of frequency resource, as the amount of supply is far from meeting its demands. Thus, cognitive radio (CR) technique is receiving more attention as a way to make use of the temporarily unoccupied frequency resource. In this paper we propose a novel out-of-band spectrum sensing and dynamic channel access scheme for frequency hopping-based cognitive radio ad-hoc networks. At the beginning of each current channel hopping time, member nodes perform spectrum sensing for the next hopping channel. Based on the proposed collision free primary detection notification, member nodes can determine whether they should execute a hopping time extension procedure of the current channel or not. When the primary detected hopping channel is re-idled, the hopping pattern recovery procedure is performed. In this paper we evaluated the performance of the proposed dynamic sensing and hopping channel extension mechanism for the various wireless network conditions. As a result, we show that the proposed method can increase channel utilization and provide reliable channel management operation.

Phonon-Assisted Electron Hopping Conduction in the Uranium Doped One-Dimensional Antiferromagnet Ca2CuO3

  • Thanh, Phung Quoc;Yu, Seong-Cho;Nhat, Hoang-Nam
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.132-135
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    • 2008
  • The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

Electrical Transport Properties of LaNi1-xTixO3(x∼0.5) Ceramics (LaNi1-xTixO3(x∼0.5) 세라믹스의 전기전도 특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.19 no.4
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    • pp.186-191
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    • 2009
  • Thermoelectric power and resistivity are measured for the perovskite $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) in the temperature range 77 K - 300 K. The measured thermoelectric power of $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) increases linearly with temperature and is represented by A + BT. The x = 0.1 sample showed metallic behavior, the x = 0.3 showed metal and insulating transition around 150 K, and x = 0.5 showed insulating behavior the over the whole temperature range. The electrical resistivity of x = 0.1 shows linear temperature dependence over the whole temperature range and $T^2$ dependence. On the other hand, the electrical resistivity of x = 0.3 shows a linear relation between $ln{\rho}$ and $T^{-1/4}$ (variable range hopping mechanism) in the range of 77 K to 150 K. For x = 0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity data was fitted to an exponential law, such as ln(${\rho}/T$) and $T^{-1}$, which is usually attributed to a small polaron hopping mechanism. These experimental results are interpreted in terms of the spin polaron (x = 0.1) and variable range hopping (x = 0.3) or small polaron hopping (x = 0.5) of an almost localized $Ni^{3+}$ 3d polaron.

Alternating - Current Electrical Properties of La0.7Sr0.3FeO3 Ceramics (La0.7Sr0.3FeO3 세라믹스의 교류 전도특성)

  • Jung, Woo-Hwan
    • Journal of the Korean Ceramic Society
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    • v.44 no.11
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    • pp.627-632
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    • 2007
  • We have studied the ac conductivity of insulating $La_{0.7}Sr_{0.3}FeO_3$ in the frequency range 20 Hz-l MHz and in the temperature range 80-300 K. We have analyzed experimental results in the frame works of the quantum-mechanical tunneling mechanism (QMT) and the hopping of barrier mechanism (HOB). We observed that small polaron QMT model is the most suitable mechanism for the low temperature ac conductivity of $La_{0.7}Sr_{0.3}FeO_3$.

Phase Transition and Relaxation Properties of Nonlinear-Optical KTP Single Crystal (비선형광학 단결정 KTP의 상전이 및 완화특성에 관한 연구)

  • Choi, Byung-Chun
    • Journal of Sensor Science and Technology
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    • v.7 no.6
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    • pp.386-393
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    • 1998
  • We have carried out the measurements of complex dielectric constants with impedance/gain-phase analyzer using capacitor method and the experiments of high temperature X-ray powder diffraction with X-ray diffractometer using ${\theta}-2{\theta}$ scan method for the KTP single crystal which has the premium nonlinear optical properties. From the results of high temperature X-ray powder diffraction experiments, we have found that KTP does not undergo structural phase transition below $900^{\circ}C$. It is clear that KTP undergoes structural phase transition around $900^{\circ}C$ and belongs to orthorhombic above $900^{\circ}C$ still. However, we have applied phenomenological relation of dielectric relaxation to the results of complex dielectric measurement and have found that relaxation mechanism of KTP well satisfies the Cole-Cole relation over the temperature range from $-78^{\circ}C$ to $200^{\circ}C$. And also the relaxation time well satisfies the Vogel-Fulcher relation. It is regarded that the hopping and thermally activated diffusion mechanism may control the conduction behavior of KTP above $200^{\circ}C$.

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Measurement-based Channel Hopping Scheme against Jamming Attacks in IEEE 802.11 Wireless Networks (IEEE 802.11 무선랜 재밍 환경에서의 측정 기반 채널 도약 기법)

  • Jeong, Seung-Myeong;Jeung, Jae-Min;Lim, Jae-Sung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.4A
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    • pp.205-213
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    • 2012
  • In this paper, we propose a new channel hopping scheme based on IEEE 802.11h as a good countermeasure against jamming attacks in IEEE 802.11 wireless networks. 802.11h Dynamic Frequency Selection (DFS) is a mechanism which enables hopping to a best channel with full channel measurement, not a randomly chosen channel, when the current link quality degradation occurs due to interferers such as military radars. However, under jammer attacks, this needs a time for full channel measurement before a new channel hopping and due to link disconnection during the time network performance degradation is inevitable. In contrast, our proposed schemes make an immediate response right after a jammer detection since every device is aware of next hopping channel in advance. To do this, a next hopping channel is announced by Beacon frames and the channel is selected by full channel measurement within Beacon intervals. Simulation results show that proposed scheme minimizes throughput degradation and keeps the advantages of DFS.

HW/SW Co-Design of an Adaptive Frequency Decision in the Bluetooth Wireless Network

  • Moon, Sang-Ook
    • Journal of information and communication convergence engineering
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    • v.7 no.3
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    • pp.399-403
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    • 2009
  • In IEEE 802.15.1 (Bluetooth) Ad-hoc networks, the frequency is resolved by the specific part of the digits of the Device clock and the Bluetooth address of the Master device in a given piconet. The piconet performs a fast frequency hopping scheme over 79 carriers of 1-MHz bandwidth. Since there is no coordination between different piconets, packet collisions may occur if two piconets are located near one another. In this paper, we proposed a software/hardware co-design of an adaptive frequency decision mechanism so that more than two different kinds of wireless devices can stay connected without frequency collision. Suggested method was implemented with C program and HDL (Hardware Description Language) and automatically synthesized and laid out. The adaptive frequency hopping circuit was implemented in a prototype and showed its operation at 24MHz correctly.