• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.297.1-297.1
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• 2016

높은 굴절률(n_H) 의 ITO films 위에 homoepitaxial 성장 기술로 낮은 굴절률(n_L) 의 ITO를 이중으로 증착한 반사방지막을 연구하였다. 우리는 기판 상에 vapor flux 입사 각도 및 columnar 성장막과 경사각 사이의 상관 관계에 기초하여 낮은 굴절률의 ITO 박막을 Oblique-angle sputtering을 사용하여 증착하였다. Oblique-angle 증착동안 columns 경사각이 incident flux angle 의 증가에 따라 linear 하게 증가했다. 반대로 incident flux angle 이 증가할때 ITO 박막의 굴절률은 현저하게 감소하였는데, 이는 원자의 shadowing effect와 표면 diffusion으로 인하여 필름내의 porosity를 증가시킨 것으로 보여진다. 이러한 결과로 homoepitaxial으로 성장시킨 ITO 이중층 구조 반사방지막 특성이 향상되었으며, 유리 기판 위에서 weight average reflectance가 n_L=1.72, n_H=1.90 에서 6.57%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.42-43
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• 1998

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.269-274
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• 1997

Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500$^{\circ}C$ and C/Si ratio 2.0.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.129-129
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.86-86
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.217-217
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• 2001