• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1037-1043
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• 2006

We report the enhancement of hole injection using ozone-treated Ag nanodots dispersed on indium tin oxide anode in $Ir(ppy)_3-doped$ phosphorescent OLED. Phosphorescent OLED fabricated on Ag nanodots dispersed ITO anode showed a lower turn on voltage and higher luminescence than those of OLEDS prepared commercial ITO anode. Synchrotron x-ray scattering examination results showed that the Ag nanodots dispersed on ITO anode is amorphous structure due to low deposition temperature. It was thought that decrease of the energy barrier height as Ag nanodots changed to $AgO_x$ nanodots by surface treatment using ozone for 10 min led to enhancement of hole injection in phosphorescent OLED. Futhermore, efficient hole injection can be explained by increase of contact region between anode material and organic material through introduction of $Ag_2O$ nanodots.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.41-44
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• 2014

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.7
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• pp.1851-1865
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• 1994

The objective of the present study is to predict the film cooling effectiveness by a row of holes at various injection ratios and injection angles. Numerical calculations have been performed to investigate the characteristics of flow and temperature distributions in a region near the down-stream of injection hole including the region of adverse pressure gradient. The elliptic turbulent 3-dimensional governing equations with variable thermal properties using the low-Reynolds number k-$\bar{varepsilon}$ model was solved by SIMPLE algorithm. The results showed that the presence of adverse pressure gradient and secondary vortex in the region near the downstream of injection hole induces large temperature gradent. The $45^{\circ}$ injection has higher averaged film cooling effectiveness than $60^{\circ}$ injection. But neverthless the $90^{\circ}$ injection has greater deviation from a flat plate than $45^{\circ}$ and $60^{\circ}$ injection, the $90^{\circ}$ injection has higher averaged film cooling effectiveness than $45^{\circ}$ and $60^{\circ}$ injection in the region near the downstream of injection hole.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.9
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• pp.1255-1266
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• 1998

Effects of a length-to-diameter ratio, L/D, on the three-dimensional flow and aerodynamic loss within an injection hole, which is normally oriented to the mainflow, have been investigated by using a straight five-hole probe. The length-to-diameter ratio of the injection hole is varied to be 0.5 and 2.0 for blowing ratios of 0.5, 1.0 and 2.0. Regardless of the blowing ratio, flows within the hole and at the jet exit are strongly affected by the length-to-diameter ratio. In the case of L/D=0.5, the inside flow is considerably influenced by the mainflow, and the exit flow variation is found to be the greatest. The aerodynamic loss in this case is usually attributed to jet -mainflow interactions. In the case of L/D=2.0, the flow separation and reattachment in the inlet region are completely separated from the complicated exit flow, and the aerodynamic-loss production is mainly due to the inlet flow separation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.492-495
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• 2008

Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped NPB as a p-doped hole injection layer to improve hole injection from a silver bottom electrode. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB. The devices result in high efficiency of 69 cd/A with almost Lambertian emission pattern.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.59-64
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• 2007

Non-contact transportation of a large-sized glass plate using air cushion for the vertical sputtering system of liquid crystal display (LCD) panel was considered. The objective of the study was to design an air pad unit which was composed of multiple injection and exhaust holes and mass flow supplying pipe. The gas was injected through multiple small holes to maintain the force for levitating glass plate. After hitting the plate, the air was vented through exhaust holes. Complex flow field and resulting pressure distribution on the glass surface were numerically studied to design the air injection pad. The exhaust hole size was varied to obtain evenly distributed pressure distribution at fixed diameter of the injection hole. Considering the force for levitating glass plate, the diameter of the exhaust hole of 30 to 40 times of the gas injection hole was recommended.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.409-410
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• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.