• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권1호
• /
• pp.24-29
• /
• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제52권3호
• /
• pp.101-106
• /
• 2003

The high temperature superconductor transformers gain interests from the industries. This paper described construction and test results of 10㎸A HTS transformer Three phase transformer with double pancake windings were constructed. To reduce the leakage magnetic field, secondary coil were placed between the two primary coils. BSCCO-2223 wire. silicon sheet steel core and FRP cryostats were used to construct the transformer. Three coils were stacked in one cryostat. Two double pancake coils were connected in series for the primary coil and one double pancake coil was used for the secondary coil. Total number of turns of the primary winding and the secondary winding were 112turns and 98urns, respectively, The rated voltages of each winding were 440/220V. The rated currents of each winding were 13.1/26.2A. After the tests of basic properties of the three phase HTS transformer using no-load test, short-circuit test and full-load test, continuous operation of 100 hours with pure resistive load has been carried out. Test results proved over-load capability and reliability of the HTS transformer.

• 대한기계학회논문집B
• /
• 제33권8호
• /
• pp.573-579
• /
• 2009

A thermal mass air flow sensor, which consists of a micro-heater and thermal sensors on the silicon-nitride thin membrane structure, is micro-fabricated by MEMS processes. Three thermo-resistive sensors, one for the measurement of microheater temperature, the others for the measurement of membrane temperature upstream and downstream of the micro-heater respectively, are used. The micro-heater is operated under the constant temperature difference mode via a real time controller, based on inlet air temperature. Two design models for microfabricated flow sensor are compared with experimental results and confirmed their applicabilities and limitations. The thermal characteristics are measured to find the best flow indicator. It is found that two normalized temperature indicators can be adopted with some advantages in practice. The flow sensor with this control mode can be adopted for wide capability of high speed and sensitivity in the very low and medium velocity ranges.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.315-318
• /
• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.80-80
• /
• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• 센서학회지
• /
• 제16권5호
• /
• pp.325-330
• /
• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.122-122
• /
• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1991년도 하계학술대회 논문집
• /
• pp.174-177
• /
• 1991

Fluorine-doped $SnO_2\;(SnO_2:F)$ films were prepared in ordinary atmosphere on borosilicate glass substrates using pyrosol deposition method starting from the solutions composed of $SnCl_4-5H_2O-NH_4F-CH_3OH-H_2O-HCl$ in an attempt to develop transparent conductors for use in amorphous silicon (a-Si) solar cello. The deposition rate of films increased with the increase in the content of $H_2O$, whereas it decreased with increasing the content of $CH_3OH$. When air was used as the carrier gas, the lowest electrical resistivity was obtained from a solution having $CH_3OH/H_2O$ mol ratio of about $2{\sim}3$ in the solution. The use of $N_2$ of the same flow rate as the carrier gab resulted always in the high resistive films, but the resistivity of the films decreased continuously with the increase in the content of $H_2O$. The surface morphology and preferred orientation of films were also affected by the solvent composition and the content of HCl in the solution. The room-temperature resistance of the films were fairly stable after heat-treatments up to $600^{\circ}C$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.215-216
• /
• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• 한국세라믹학회지
• /
• 제41권1호
• /
• pp.62-68
• /
• 2004

본 연구에서는 SHS 공정에 의하여 기공의 크기를 조절함으로서 전기저항 발열 특성을 가지는 다공성 $MoSi_2$를 제조하는 공정에 관하여 연구하였다. 결함이 억제된 다공질 재료를 제조하기 위하여 Si 함량 변화 및 예열 공정을 실시하였으며, 성형체 제조에 사용되는 Mo 분말의 크기 변화에 따른 가공 형성 거동에 대하여 연구하였다. 실험 결과 합성된 $MoSi_2$ 입자의 크기는 Mo 입자의 크기와는 관계없이 연소 합성시 발열되는 발열양에 의해 좌우되었으며, 기공의 크기는 Mo 입자의 크기에 따라 결정되었다. 또한 가공 경사 $MoSi_2$ 다공질 재료를 만들기 위하여 150-300${\mu}m$ Mo 분말과 4-5${\mu}m$ Mo 분말을 단계별로 5층으로 혼합하여 합성한 결과 거시적으로 순차적인 기공 크기 분포를 나타내었으며, 이를 통하여 포집 효율등이 우수한 다공성 발열체 재료의 제조가 가능하였다.