• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.14-18
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• 2023

Superconducting layers deposited on the metal substrate using the pulsed laser deposition process (PLD) play a crucial role in exploring new applications of superconducting wires and enhancing the performance of superconducting devices. In order to improve the superconducting property and increase the throughput of superconducting wire fabricated by pulsed laser deposition, high temperature heating device is needed that provides high temperature stability and strong durability in high oxygen partial pressure environments while minimizing performance degradation caused by surface contamination. In this study, new heating device have been developed for PLD process that deposit and growth the superconducting material continuously on substrate using reel-to-reel transportation apparatus. New heating device is designed and fabricated using iron-chromium-aluminum wire and alumina tube as a heating element and sheath materials, respectively. Heating temperature of the heater was reached over 850 ℃ under 700 mTorr of oxygen partial pressure and is kept for 5 hours. The experimental results confirm the effectiveness of the developed heating device system in maintaining a stable and consistent temperature in PLD. These research findings make significant contributions to the exploration of new applications for superconducting materials and the enhancement of superconducting device performance.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• Journal of the Korean earth science society
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• v.35 no.4
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• pp.237-248
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• 2014

To analyze the characteristics of deposition and dispersion of volcanic ash emitted from Mt. Kirishima on January 26, 2011, several numerical simulations were carried out by using the numerical models including Weather and Research Forecast (WRF) and FLEXPART. The dispersion of ash located under 1 km high tends to be concentrated along the prevailing wind direction on January 26 2011. On the other hand, volcanic ash released on the following day spreads to Kirishima bay due to the intensified high pressure air mass in southern Kyushu. When Siberian air mass was intensified January 26, 2011, the deposition of volcanic ash is concentrated restrictedly in the narrow area along the wind direction of the downwind side of Mt. Kirishima. The development of high pressure air mass over the eruption area tends to induce the intensified horizontal diffusion of volcanic ash. Since the estimated deposition of volcanic ash is agreed well with observed values, the proposed numerical simulation is reasonable to use the assessment on the behavior of volcanic ash.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.8
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• pp.66-71
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• 2022

Metal additive manufacturing (AM) has revolutionized several manufacturing industries. AM can generate large-scale metal components and produce complex geometries close to net-shapes. WAAM is an AM technology that has garnered considerable interest among industries owing to its economics and relatively high deposition rates. However, the heat accumulation in the weld bead during deposition triggers distortion and residual stress. To address these problems, various methods of interpass pressure rolling systems have been suggested in recent research. In addition, combining the rolling and WAAM processes can mitigate residual stresses. The constant-pressure rolling of the interlayer also affect the microstructure. The coarse microstructure of the as-deposited sample was altered to finer equiaxed grains via these methods. However, the bead-shape accuracy of the interlayer constant-pressure method does not consider the heat accumulation in each layer. Therefore, this study develops an interpass variable pressure rolling system that considers the heat accumulation of each layer. The interpass variable pressure rolling system comprises deposition, detection, pressure, and transport units. Finally, verification tests are performed on the interpass variable-pressure rolling system (at 500 kg) with the WAAM process, and the obtained results are discussed.

• Solar Energy
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• v.15 no.2
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• pp.91-99
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• 1995

The influence of deposition parameters on the deposition of $SnO_2$ thin films by spray pyrolysis has been studied. In the case of spray solution with tile concentration of 0.01M, at low deposition temperature the deposition was controlled by surface reaction and portion controlled by mass transfer is increased with increasing deposition temperature to $400^{\circ}C$. Above $400^{\circ}C$, the deposition is controlled by mass transfer at low spray pressure, and by surface reaction at high spray pressure. As the concentration of spray solution increased the deposition rate increased, and in this experiment the deposition depends on the Rideal-Eley mechanism. The deposition rate increased with increasing substrate temperature up to $400^{\circ}C$ and then decreased due to homogeneous nucleation. The thickness of the deposit increased with increasing spray duration, and the adhesion between substrate and deposit was formed physically.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.