• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.361-367
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• 1998

$\alpha$-Sexithiophene ($\alpha$-6T) thin films were deposited by organic molecular beam deposition (OMBD) technique. The $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientation, crystallinity, and surface morphology of $\alpha$-6T films were investigated with angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). It was found that the crystalline structure of $\alpha$-6T films was monoclinic and independent uppon substrate temperature, deposition rate, and deposition pressure. On the other hand, the $\alpha$-6T molecules in the film deposited at a low deposition rate, higher substrate temperature, and under a high vacuum tended to be aligned perpendicular to the substrate.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Progress in Superconductivity
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• v.8 no.1
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• pp.71-74
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• 2006

High $J_c$ over 1 $MA/cm^2$ YBCO film has been successfully prepared using nitrate precursors by spray pyrolysis method. Aerosol drolpets generated using a concentric spray nozzle were directly sprayed on a $LaAlO_3$(100) single crystal substrate. The cation ratio of precursor solution was Y:Ba:Cu=1:2.65:1.35. The distance between nozzle and substrate was 15 cm. Deposition temperature was ranging from $750^{\circ}C\;to\;800^{\circ}C$. Deposition pressure was 100 Torr, and oxygen partial pressure was varied from 10 Torr to 50 Torr. The microstructure, phase formation, texture development and superconducting properties of deposited films were largely changed with oxygen partial pressure. Deposited films showed a texture with(001) planes parallel to substrate plane. High quality film was obtained when film was deposited at $760^{\circ}C$ with an oxygen partial pressure of 30 Torr. The critical current density($J_c$) of the YBCO film was 1.75 $MA/cm^2$ at 77 K and self-field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• Proceedings of the Korea Contents Association Conference
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• 2009.05a
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• pp.807-809
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• 2009

Thin film deposition methods have been widely used and intensively investigated because high quality crystalline films enable to fabricate by sputtering. Especially rf magnetron sputtering deposition has advantages of being employ a relatively high deposition rate and also to achieve high crystalline films in low pressure because plasma density around target by magnetic is high. To apply ZnO thin film for SAW filter, it has highly flat surface, excellent c-axis preferred orientation and high resistivity value. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2245-2248
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• 2009

This paper demonstrates room temperature chemical vapor deposition (RTCVD) for fabricating titania inverse opals. The colloidal crystals of monodisperse polymer latex spheres were used as a sacrificial template. Titania was deposited into the interstices between the colloidal spheres by altermate exposures to water and titanium tetrachloride (Ti$Cl_4$) vapors. The deposition was achieved under atmospheric pressure and at room temperature. Titania inverse opals were obtained by burning out the colloidal template at high temperatures. The filling fraction of titania was controlled by the number of deposition of Ti$Cl_4$ vapor. The morphology of inverse opals of titania were investigated. The optical reflection spectra revealed a photonic band gap and was used to estimate the refractive index of titania.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.106-110
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• 2006

We have investigated the effect of the experimental variables such as temperature and pressure on conformality of Co films deposited over high aspect ratio trenches using $Co_2(CO)_8$ as a precursor. The results show that the conformality of Co films is a strong function of temperature and process pressure. Lowering the pressure and temperature significantly improves the conformality. As the pressure decreases from 0.6 Torr to 0.2 Torr at $50^{\circ}C$, the bottom coverage of Co films over $0.2{\mu}m$ width trenches with an aspect ratio of 13 to 1 significantly increases to 85%. However, further increasing the temperature from 50 to $60^{\circ}C$ at the pressure of 0.2 Torr degrades the bottom coverage to 14%. In contrast, the extremely low pressure of 0.03 Torr allows the excellent conformal deposition of Co films up to $70^{\circ}C$. This can be attributed to the suppression of homogeneous reaction in the gas phase, which can create the intermediate products with high sticking coefficient. In addition, the Co films deposited at $50^{\circ}C$ show the low resistivity with negligible contamination. As a result, the newly developed Co process using MOCVD can be implemented into the next generation devices with complex shapes.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.