• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.277-284
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• 1998

To establish the calibration system of hot cathode ionization gauges as transfer gauges, researches were concentrated on measurements of the pressure ratio, the orifice conductance as well as the porous plug conductance of a ultrahigh vacuum standards system. Two ionization gauges obtained from two different vendors were calibrated in the pressure range of $7{times}10^{-7}$ to $4{times}10^{-3}$ Pa by injecting argon gas into the standards system. As a result, a 4% difference was revealed in non-linearity of the extractor ionization gauge due to the pressure difference between high vacuum and ultrahigh vacuum, and 3% for the stabil ionization gauge. It has been understood that the extractor ionization gauge is able to be used within the 10% error, the uncertainty of the extractor ionization gauge, if properly regulating the sensitivity of the gas. The stabil ionization gauge was also proved to be useable in the maximum error margin of 4% without the control of the gas sensitivity.

• Journal of the Korean Applied Science and Technology
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• v.40 no.1
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• pp.71-80
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• 2023

Silver paste is a valuable electrode material for electronic device applications because it is easy to handle with relatively low heat treatment. This study treated the electrode surface using an atmospheric-pressure plasma jet on the silver-paste electrode. This plasma jet was generated in an argon atmosphere using a high voltage of 5.5 to 6.5 kV with an operating frequency of 11.5 kHz. Plasma-jet may be more beneficial to the printing process by performing it at atmospheric pressure. The electrode surface becomes hydrophilic quickly and contact angle variation is observed on the electrode surface as a function of plasma treatment time, applied voltage, and gas flow rate. Also, there was no deviation in the contact angle after the plasma treatment in the large-area sample, that means a uniform result could be obtained regardless of the substrate size. The outcomes of this study are expected to be very useful in forming a stacked structure in the manufacture of large-area electronic devices and future applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.345.2-345.2
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• 2016

Alumina (Al2O3) doped zinc oxide (ZnO) films (AZO) have been prepared from 2 wt.% Al2O3 doped ZnO target by DC magnetron sputtering at a 2 mTorr (0.27 Pa) chamber pressure in (15 sccm) argon ambient. We obtained films of various opto-electronic properties by variation of target angle from 32.5o to 72.5o. At lower target angle deposited films show higher values in optical gap, mobility of charge carrier, carrier concentration, crystallite grain size, transmission range of wavelength, which are favorable characteristics of AZO as a transparent conducting oxide (TCO). At higher target angle the sheet resistance, work function, surface roughness for the AZO films increases. Measured haze ratio of the films changed lower to higher and size of characteristic surface structure of as deposited film ranges from ~40 nm to ~300 nm. By a combination of low and high target angle we obtained a textured TCO film with high conductivity.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.6
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• pp.482-489
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• 2008

Ti-Cr alloys consist of BCC solid solution, C36, C14 and C15 Laves phase at high temperature. Among others, the BCC solid solution phase was reported to have a high hydrogen storage capacity. However, activation, wide range of hysteresis at hydrogenation/dehydrogenation, and degradation of hydrogen capacity due to hydriding/dehydriding cycles must be improved for its application. In this study, to improve such problems, we added a Nb. For attaining target materials, Ti-10Cr-xNb(x=1, 3, 5wt.%) specimens were prepared by arc melting. The arc melting process was carried out under argon atmosphere. As-received specimens were characterized using XRD(X-ray diffraction), SEM(Scanning Electron Microscopy) with EDX(Energy Dispersive X-ray) and TG/DSC(Thermo Gravimetric Analysis/Differential Scanning Calorimetry). In order to examine hydrogenation behavior, the PCI(pressure-Composition-Isotherm) was performed at 293, 323, 373 and 423K.

• Journal of the Korean institute of surface engineering
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• v.45 no.2
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• pp.89-94
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• 2012

A study to replace a high temperature thermal carbonization process with microwave plasma process is carried for PAN fiber as a starting material. Near atmospheric pressure microwave plasma (1 Torr~45 Torr) was used to control to get the fiber temperature up to $1,000^{\circ}C$. Even argon is an inert gas, its plasma state include high internal energy particles; ion (15.76 eV) and metastable (11.52 eV). They are very effective to lower the necessary thermal temperature for carbonization of PAN fiber and the resultant thermal budget. The carbonization process was confirmed by both EDS (energy dispersive spectroscopy) of plasma treated fibers and OES (optical emission spectroscopy) during processing step as a real time monitoring tool. The same trend of decreasing oxygen content was observed in both diagnostic methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.1-55.1
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• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.489-494
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• 2020

SiC is a material with excellent strength, heat resistance, and corrosion resistance. It is generally used as a material for SiC invertors, semiconductor susceptors, edge rings, MOCVD susceptors, and mechanical bearings. Recently, SiC single crystals for LED are expected to be a new market application. In addition, SiC is also used as a heating element applied directly to electrical energy. Research in this study has focused on the manufacture of heating elements that can raise the temperature in a short time by irradiating SiC-I₂ with microwaves with polarization difference, instead of applying electric energy directly to increase the convenience and efficiency. In this experiment, Polydimethylsilane (PDMS) with 1,2 wt% of iodine is synthesized under high temperature and pressure using an autoclave. The synthesized Polycarbosilane (PCS) is heat treated in an argon gas atmosphere after curing process. The experimental results obtain resonance peaks using FT-IR and UV-Visible, and the crystal structure is measured by XRD. Also, the heat-generating characteristics are determined in the frequency band of 2.45 GHz after heat treatment in an air atmosphere furnace.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.