• Title/Summary/Keyword: High-k dielectric material

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dispersion and relaxation of Epoxy/Layered Nanocomposite (에폭시/나노층상복합재료의 유전분산과 완화)

  • Ahn, Joon-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.87-87
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    • 2010
  • Epoxy/mica has been used as the material of high-voltage rotator stator winding due to its high insulation performance, mechanical strength, and thermal stability. In recent years, however, it shows frequent changes in the load of generators and frequent automatic stops due to the significant increase in peak loads from the increase in the applied load of power facilities according to the introduction of advanced and high-technology equipments. Thus, it is necessary to develop new materials that highly develop the conventional insulation materials. Nanotechnology introduced in the present time has become an alternative plan that overcomes such technical limitations. In addition, the nano-scaled intercalation composite has been known as the material that represent excellent electrical, mechanical, and thermal characteristics compared to the conventional materials. This study investigated the dielectric dispersion and relaxation characteristics of the nanocomposite, which was fabricated by mixing epoxy matrix with nano-scaled intercalation mica and clay, according to changes in frequencies and temperatures.

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Study on the Electrical propertics of high capacitance Multilayer Ceramic Capacitor (고용량 MLCC의 전기적 특성에 관한 연구)

  • Kim, Hyun-Duk;Yoon, Jung-Rag;Kim, Eung-Kwon;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.348-348
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    • 2005
  • High capacitance MLCC has been enabled through the use of nickel electrodes to produce thinner layers at acceptable costs. High capacitance MLCC devices offer significant advantages to electrolytics such as tantalum and aluminum ; Lower ESR for high frequency applications. Non-polarized. Many process improvement have enabled this technology Higher dielectric constants Thinner dielectric and electrode layers through BME More accurate layer construction. This study is high capacitance MLCC electrical propertics. reliability, Analysis on DOE(Design Of Experiment) of the electical propertics.

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Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor

  • Park, Y.K.;Y.S. Ahn;Lee, K.H.;C.H. Cho;T.Y. Chung;Kim, Kinam
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.76-82
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    • 2003
  • The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

A Study on the Phase Noise Improvement of Oscillator using Dielectric-rod loaded Cavity Resonators with HIS End-plates (고온초전도체와 유전체 삽입 공동 공진기를 이용한 발진기의 위상잡음 개선에 관한 연구)

  • Lee, Won-Hui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.2
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    • pp.174-177
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    • 2009
  • In this paper, an oscillator using dielectric-rod loaded cavity resonators with HTS(High Temperature Superconductor) end-plates was presented. It was operated at X-band. A two port cavity resonator was incorporated into a basic feedback loop oscillator configuration. A rutile loaded cavity resonator with HTS thin film end-plates was used to provide the quality factor between $10^4$ and $10^6$. A parallel feedback oscillator was constructed with a dielectric loaded cavity resonator, an amplifier, and a directional coupler. At 300 K, the experimental results showed the phase noise of -108 dBc/Hz at a 100 kHz offset frequency. At 26 K, the results was -118.8 dBc/Hz at same offset frequency.

Study on the Dielectric and Voltage-Current Properties of $(Sr{\cdot}Ca)TiO_3$-based Ceramics ($(Sr{\cdot}Ca)TiO_3$계 세라믹의 유전 및 V-I 특성에 관한 연구)

  • Kang, Jae-Hun;Choi, Woon-Shik;Kim, Tae-Wan;Song, Min-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.09a
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    • pp.72-75
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    • 2001
  • In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

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Variation of Dielectric Constant with Various Particle Size and Packing Density on Inkjet Printed Hybrid $BaTiO_3$ Films

  • Lim, Jong-Woo;Kim, Ji-Hoon;Yoon, Young-Joon;Yoon, Ho-Gyu;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.271-271
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    • 2010
  • $BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

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Epoxy/BaTiO3 (SrTiO3) composite films and pastes for high dielectric constant and low tolerance embedded capacitors fabrication in organic substrates

  • Paik Kyung-Wook;Hyun Jin-Gul;Lee Sangyong;Jang Kyung-Woon
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2005.09a
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    • pp.201-212
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    • 2005
  • [ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

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Dielectric Properties of ink-Jet printed $Al_2O_3$-resin Hybrid Films

  • Hwang, Myung-Sung;Jang, Hun-Woo;Kim, Ji-Hoon;Kim, Hyo-Tae;Yoon, Young-Joon;Kim, Jong-Hee;Moon, Joo-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.81-81
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    • 2009
  • Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed $Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed $Al_2O_3$-resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$films.

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Dielecric properties depending on applied voltage of OLEDs with Hole Injection Layer (유기발광소자에서 정공주입층의 인가전압에 따른 유전특성)

  • Cha, Ki-Ho;Lee, Young-Hwan;Kim, Won-Jong;Lee, Jong-Yong;Kim, Gwi-Yeol;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.309-310
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    • 2006
  • We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.

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The effect of splay elastic constant on the transmittance of fringe-field switching using a liquid crystal with positive dielectric anisotropy (유전율 이방성이 양인 액정을 사용한 FFS 모드에서의 스플레이 탄성상수에 따른 투과율 연구)

  • Kim, Tae-Hyun;Lee, Ji-Youn;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.518-519
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    • 2005
  • We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

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