• Journal of Magnetics
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• v.20 no.3
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• pp.265-272
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• 2015

In recent years, flux switching machines (FSMs) have been an attractive research topic owing to their tremendous advantages of robust rotor structure, high torque, and high power capability suitable for intensive applications. However, most of the investigations are focusing on the inner-rotor structure, which is incongruous for direct drive applications. In this study, high torque and power densities of a new 12S-14P outer-rotor permanent magnet (PM) FSM with a DC excitation coil was investigated based on two-dimensional finite element analysis for in-wheel direct drive electric vehicle (EV). Based on some design restrictions and specifications, design refinements were conducted on the original design machine by using the deterministic optimization approach. With only 1.0 kg PM, the final design machine achieved the maximum torque and power densities of 12.4 Nm/kg and 5.93 kW/kg, respectively, slightly better than the inner-rotor HEFSM and interior PM synchronous machine design for EV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.477-478
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• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2009_2010
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• 2009

Thin-gauged 3% Si-Fe sheets having a high magnetic induction of over 1.9 T have been developed for the purpose of applications where operation frequency is higher than power frequency. In order to clarify requirements of iron loss characteristics for the applications, iron loss characteristics of the newly developed strip were investigated by iron loss separation method and were compared with those of commercially produced 0.3 mm-thick electrical sheets. In case of relatively high excitation induction(1.7 T) and low frequency(60 Hz), reducing hysteresis loss is effective to decrease total iron loss. In case of relatively low excitation induction(1.0 T) and high frequency(1 kHz), reducing eddy-current loss is effective by decreasing thickness and grain size to improve total iron loss.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.4
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• pp.319-328
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• 2020

The recent use of distributed power generation systems constructed with DC-DC converters has become extremely popular owing to the rising need for environment friendly energy generation power systems. In this study, a new single-phase five-level inverter for off-grid applications constructed with a multilevel DC-DC step-up converter is proposed to boost a low-level DC voltage (36 V-64 V) to a high-level DC bus (380 V) and invert and connect them with a single-phase 230 V rms AC load. Compared with other traditional multilevel inverters, the proposed five-level inverter has a reduced number of switching devices, can generate high-quality power with lower THD values, and has balanced voltage stress for DC capacitors. Moreover, the proposed topology does not require multiple DC sources. Finally, the performance of the proposed topology is presented through the simulation and experimental results of a 400 W hardware prototype.

• Journal of Power Electronics
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• v.14 no.3
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• pp.478-487
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• 2014

This study presents a new interleaved three-level zero-voltage switching (ZVS) converter for high-voltage and high-current applications. Two circuit cells are operated with interleaved pulse-width modulation in the proposed converter to reduce the current ripple at the input and output sides, as well as to decrease the current rating of output inductors for high-load-current applications. Each circuit cell includes one half-bridge converter and one three-level converter at the primary side. At the secondary side, the transformer windings of two converters are connected in series to reduce the size of the output inductor or switching current in the output capacitor. Based on the three-level circuit topology, the voltage stress of power switches is clamped at $V_{in}/2$. Thus, MOSFETs with 500 V voltage rating can be used at 800 V input voltage converters. The output capacitance of the power switch and the leakage inductance (or external inductance) are resonant at the transition interval. Therefore, power switches can be turned on under ZVS. Finally, experiments verify the effectiveness of the proposed converter.

• Journal of Power Electronics
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• v.11 no.4
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• pp.612-619
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• 2011

This paper presents a water treatment system for leachate from sewage-filled ground that uses a pulsed-power modulator developed based on semiconductor switches in order to realize a long life, a high repetition rate, and a fast rising time. The specifications of the developed pulsed-power modulator are the pulsed output voltage, the output current, the pulse repetition rate (PRR), the pulse width, and an average output power of $60\;kV_{max}$, $300\;A_{max}$, 3000, $50\;{\mu}s$, and 15 kW, respectively. The pulsed-power water treatment system was introduced and analyzed using an equivalent electrical circuit model to optimize the output voltage waveform. The experimental results verify that the proposed water treatment system can be effectively used for industrial applications.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.7-17
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• 2014

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.484-488
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• 2001

The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.576-580
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• 2001

This paper presents a casca multilevel PWM rectifier without the isolation transformers for energy build-up at each inverter modules; The features and advantages of the proposed PWM rectifier can be summarized as follows; 1) It realizes the high power high voltage AC/DC power conversion, 2) It uses no transformer which is bulky and heavy, 3) It has hybrid structure so that switching devices can be effectively utilized, 4) It produces high quality AC current even in high power high voltage applications, 5) The input power factor remains unity by simple modulation index control. The multilevel rectifier is analyzed by using the circuit DQ transformation whereby the characteristics and control equations are obtained. Finally, it will be shown that the system simulation reveals the validity of analyses

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.1-11
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• 2018

Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.