• The Transactions of the Korea Information Processing Society
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• v.6 no.3
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• pp.766-772
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• 1999

With the increase of portable system and high-density IC, power consumption of VLSI circuits is very important factor in design process. Power estimation is required in order to estimate the power consumption. A simple and correct solution of power estimation is to use circuit simulation. But it is very time consuming and inefficient way. Probabilistic method has been proposed to overcome this problem. Transition density using probability was an efficient method to estimate power consumption using BDD and Boolean difference. But it is difficult to build the BDD and compute complex Boolean difference. In this paper, we proposed Propowest. Propowest is building a digraph of circuit, and easy and fast in computing transition density by using modified COP algorithm. Propowest provides an efficient way for power estimation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.4
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• pp.321-327
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• 2010

Current rechargeable battery cannot provide high energy density and the operational durations required. But linear engine/generators provide high energy density for portable power applications because fuel is more high density. In this paper, we suggest that basic design of powerpack using linear engine for assisting power output. Efficiency is relatively high because linear engine don't have crank mechanism compared with rotary engine. We made prototype engine and had experiments to know moving characteristic about the Linear Engine. It was possible to operate velocity at 50 Hz at the firing and pressure in cylinder was 16bar.

• Journal of information and communication convergence engineering
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• v.6 no.3
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• pp.301-304
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• 2008

This paper presents a lossless inductor snubber-assisted series resonant high frequency inverter using the trench gate IGBTs for the electromagnetic induction eddy current-heated fixing roller in copy and printing machines in a new generation. This soft switching high-frequency inverter can completely achieve zero current soft switching (ZCS) commutation mode transitions and wide power regulation under its constant frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally presented for a constant frequency PDM strategy under a ZCS operation, together with its output power regulation characteristics-based on the pulse density modulation. The effectiveness of this soft switching high-frequency inverter is confirmed for the fixing equipment with the induction-heated fixing roller.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.512-519
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• 2011

Current rechargeable battery cannot provide high energy density and the operational durations required. But linear engine/generators provide high energy density for portable power applications because fuel is more high density. In this paper, we suggest that basic design of powerpack using linear engine for assisting power output. Efficiency is relatively high because linear engine don't have crank mechanism compared with rotary engine. We made prototype engine and had experiments to know moving characteristic about the Linear Engine. It was possible to operate velocity at 50 Hz at the firing and pressure in cylinder was 16bar.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.37.1-37
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• 2001

Electric plating is used in various industry field. Specially, pulse plating is able to deposit material at high current density compared to conventional DC plating. For example, pulse plating can get more fine grain, can improve adhesion and metal distribution and current efficiency, can reduce internal stress and crack. Therefore, we developed bidirection pulse power supply(BPPS) which has high speed pulse current and high current density and improve deposition quality and increase plating speed in this paper. BPPS(Bidirection pulse power supply) needs high speed rising time, falling time and output current accuracy. BPPS consists of rectifier part, chopper part, invertor part, and control part. Rectifier part changes outprt current direction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.05a
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• pp.191-209
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• 2003

Voices of Customers; 1. Long time operating power 2. Quick Charging 3. High power and energy density 4. Safety 5. Small and light power Technical Requirements for Delivering DMFC to Consumer's Hands; 1. MEA having tripled power density. 2. Membrane of maintaining the same protonic conductivity and near 0% cross-over when 10M or higher concentration of methanol fueling (Omitted)