• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.767-770
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• 2009

We synthesized a spirobenzofluorene type phosphine oxide (SPPO2) as a new triplet host and an universal electron transport material for phosphorescent organic light-emitting diodes(PHOLEDs). Red PHOLEDs with the SPPO2 host material showed a high quantum efficiency of 14.3 % with a current efficiency of 20.4 cd/A. In addition, the SPPO2 could be applied as an electron transport material which can be matched with any host material due to the lowest unoccupied molecular orbital of 2.4 eV. Electron injection from a cathode to the SPPO2 electron transport layer was better than common electron transport materials. In particular, the SPPO2 was effective as the electron transport material in blue PHOLEDs and the quantum efficiency was more than doubled and driving voltage was lowered by more than 3 V using the SPPO2 instead of common electron transport material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.436-437
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• 2007

Organic light-emitting diodes (OLEDs) were fabricated with the electron dominant complex, 4,7-diphenyl-1, 10-phenanthroline (Bphen) into the traditional electron transporting material of tris (S-hydroxyquinoline) aluminum $(Alq_3)$, neat $Alq_3$ and Bphen as electron-transporting layers (ETLs), respectively. Use of the Bphen material results in efficient electron injection and transport, allowing for high luminous efficiency devices. The devices with neat $Alq_3$(Device1), 1:1 mixed $Alq_3$ : Bphen(Device2), and Bphen(Device3) have efficiency of 15.3cd/A, 16.9cd/A, 20.9cd/A, respectively, at $20\;mA/cm^2$. The efficiency characteristic of device with Bphen is best, but the device that is satisfied high efficiency and stability at once is observed in Device2.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.9
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• pp.1264-1276
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• 2000

Light-off catalyst has been used for minimization of cold-start emissions. Improved cold-start performance of light-off catalyst needs the optimal design in terms of flow distribution, geometric surface area, precious metal loading, cell density and space velocity. In this study, these influential factors are numerically investigated using integrated numerical technique by considering not only 3-D fluid flow but also heat and mass transfer with chemical reactions. The present results indicate that uneven catalyst loading of depositing high active catalyst at upstream of monolith is beneficial during warm-up period but its effect is severely deteriorated when the space velocity is above 100,000 $hr^{-1}$ To maximize light-off performance, this study suggests that 1) a light-off catalyst be designed double substrate type; 2) the substrate with high GSA and high PM loading at face be placed at the front monolith; and 3) the cell density of the rear monolith be lower to reduce the pressure drop.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.122-129
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• 2003

In the case of a AIGalnP/GaP system rectangular parallelepiped high brightness LED which has side walls etched to be slanted off the vertical direction, we have studied the effects of lossy electrodes and material absorption and etching depth and angle of side walls on its light extraction efficiency. If LEDs have no electrodes, in order to obtain an 80％ light extraction efficiency of a TIP (truncated inverted pyramid) LED, the side-etched LEDs should have an etching angle of 22$^{\circ}$~45$^{\circ}$ and an etching depth of 8~17% of a dice height and an absorption coefficient less than 1 $cm^{-1}$ / In case of etching depth of 16~39% of a dice height, we can obtain a 90% light extraction efficiency of a TIP LED. But when LEDs have two electrodes and no absorption loss, in order to obtain an 80％ light extraction efficiency of a TIP LEBs, the side-etched LEDs should have an etching angle of 25$^{\circ}$-45$^{\circ}$ and an etching depth of 30～36% of a dice height. In case of etching depth of 57~71％ of a dice height, we can obtain a 90％ light extraction efficiency of a TIP LED.

• Proceedings of the KIPE Conference
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• 2003.11a
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• pp.85-89
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• 2003

Many single-stage PFC(power-facto.-correction) ACHC converters suffer from the high link voltage at high input voltage and light load condition. In this paper, to suppress the link voltage, a novel high power factor high efficiency PFC AC/DC converter is proposed using the single controller which generates two gate signals so that one of them is used far gate signal of the flyback DC/DC converter switch and the other is applied to the Boost PFC stage. A 130w prototype for LCD monitor adapter with universal input $(90-265V_{rms})$ and 19.5V 6.7A output is implemented to verify the operational principles and performances. The experimental results show that the maximum link voltage stress is about 450V at 270Vac input voltage. Moreover, efficiency and power factor are over $84\%$ and 0.95, respectively, under the full load condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• Journal of Korean Society of Forest Science
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• v.97 no.5
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• pp.508-515
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• 2008

Sycamore (Platanus occidentalis L.) seedlings were grown under low light intensity and ozone treatments to investigate the role of the light environment in their response to chronic ozone stress. One-year-old seedlings of Platanus occidentalis L. were grown in pots for 3 weeks under low light (OL, $150{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) and high light (OH, $300{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) irradiance in combination with 150 ppb of ozone fumigation. After three weeks of ozone and light treatment, seedlings were placed in ozone free clean chamber for 3 weeks for recovery from ozone stress with same light conditions to compare recovery capacity. Ozone fumigation determined an impairment of the photosynthetic process. Reduction of leaf dry weight (14%) and shoo/root ratio (17%) were observed in OH treatment. OL treatment also showed severe reductions in leaf dry weight and shoot/root ratio by 48% and 36% comparing to control, respectively. At the recovery phase, OH-treated plants recovered their biomass, whereas OL-treated plant showed reduction in leaf dry weight (52%) and shoot/root ratio (49%). OH-treated plants reached similar relative growth rate (RGR) comparing to control, whereas OL-treated plants showed lower RGR in stem height. However, there were no significant differences in response to those treatments in stem diameter RGR at the recovery phase. Ozone treatment produced significant reduction of net photosynthesis in both high and low light treatments. Carboxylation efficiency and apparent quantum yield in OL-treated plants showed significant reductions rate to 10% and 45%, respectively. At the recovery stage, ozone exposed seedlings under high light had similar photosynthetic capacity comparing to control plants. Antioxidant enzymes activities such as superoxide dismutase (SOD), ascorbate peroxidase (APX), and glutathione reductase (GR) were increased in ozone fumigated plants only under low light. The present work shows that the physiological changes occur in photosynthesis-related parameters and growth due to ozone and low light stress. Thus, low light seems to enhance the detrimental effects of ozone on growth, photosynthesis, and antioxidant enzyme responses.