• 센서학회지
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• 제29권6호
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• pp.407-411
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• 2020

In this study, we propose an array-type gas sensor with high selectivity and response using multiple oxide semiconductors. The sensor array was composed of SnO₂ and In₂O₃, and the detection characteristics were improved by using Pt, Au, and Pd catalysts. All samples were deposited directly on the Pt interdigitated electrode (IDE) through the e-beam evaporator glancing angle deposition (GAD) method. They grew in the form of well-aligned nanorods at off-axis angles. The prepared SnO₂ and In₂O₃ nanorod samples were exposed to CH₃COCH₃, C₇H₈, and NO₂ gases in a 300℃ dry condition. Au-decorated SnO₂, Au-decorated In₂O₃, and Pd-decorated In₂O₃ exhibited high selectivity for CH₃COCH₃, C₇H₈, and NO₂, respectively. They demonstrated a high detection limit of the sub ppb level computationally. In addition, measurements from each sensor were executed in the 40% relative humidity condition. Although there was a slight reduction in detection response, high selectivity and distinguishable detection characteristics were confirmed.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Current Photovoltaic Research
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• 제6권1호
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• 한국식품저장유통학회지
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• 제4권3호
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• pp.265-270
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• 1997

Effect of modified atmosphere packaging conditions on quality changes of dry jujube was investigated. Dry jujubes with moisture content of 26.7% were packaged in PET/Al/PE film pouches with modified atmospheres. The tested packages include those with normal air, vacuum, CO2 flushing, N2 flushing and O2 scavenger. Packages were stored at 25$^{\circ}C$ for 6 months, during which ascorbic acid concentration, browning level, titratable acidity and surface color were measured. Generally modified atmosphere packages could improve quality retention of dry jujubes except that vacuum package resulted in large surface color change. CO2-flushed package showed the best quality retention of high ascorbic acid content and low browning during 112 days, but caused high amounts of ascorbic acid destruction and browning in longer storage. In all the modified atmosphere packages titratable acidity reached a maximum followed by decline and subsequent rise, while it increased linearly with time in normal air package. Considering ascorbic acid retention browning level and surface color changes during 112 days, the packages of CO2 flushing and N2 flushing were better than others.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.83-84
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• 2006

Chemical mechanical polishing (CMP) process has been attracted as an essential technology of multi-level interconnection. However, the COO (cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. Also, the addition effects of $MnO_2$ abrasives and the diluted silica slurry (DSS) on CMP performances were evaluated. Finally, we have investigated the possibility of new abrasive for the oxide CMP application.

• 한국초지조사료학회지
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• 제5권2호
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• pp.136-142
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• 1985

임목(林木)과 초사료생산(草飼料生産)이라는 측면에서 임간초지개발(林間草地開發)은 우리 나라에서 중요한 과제라 할 수 있다. 본(本) 시험(試驗)은 임간혼파초지(林間混播草地)에서 생산성향상(生産性向上)과 이용기간연장(利用期間延長)을 위한 적정시비수준(適正施肥水準)을 구명(究明)하고자 수령((樹齡) $10{\sim}15$년간(年間) 소나무지대(차광정도(遮光程度) $40{\sim}50%$)에서 질소, 인산, 칼리비료의 수준을 달리한 13가지 시비수준(施肥水準)을 난괴법으로 배치하여 목초의 생육특성, 엽록소함량, 재생과 건물수량 등을 조사하였다. 1984년(年) 수원 근교 임간지에서 수행된 시험(試驗)의 결과(結果)를 요약(要約)하면 다음과 같다. 1. 초고(草高)와 목초피복율(牧草被覆率)은 대체로 표준비 이상의 질소시비구에서 높았으며, 3 요소 무비구와 질소무비구에서 가장 부족(不足)하였고, 최종예취후 나지율(裸地率) 질소수준이 낮을 때 높았다. 2 엽신(葉身)의 엽록색도(葉綠色度)와 엽록소함량(葉綠素含量)은 질소수준이 표준비 이상인 구에서 높았으며 3요소 무비구와 질소무비구에서 가장 낮았다. 엽부패도(葉腐敗度)와 초형(草型)은 질소수준이 높을 때 불량(不良)해지는 경향을 보였다. 3 1차(次) 예취후(刈取後) 목초(牧草)의 시기별(時期別) 재생력(再生力)은 표준비이상의 질소시용구에서 양호(良好)하였으며, 3요소무비구와 질소무비구는 재생초장(再生草長)과 재생건물중(再生乾物重) 증가속도가 가장 불량(不良)하였다.4. 목초(牧草)의 건물수량(乾物收量)은 질소수준이 표준비 이상인 구에서 많았으며 3 요소무비구와 질소무비구에서 가장 적었다(P<0.05). 본 시험에서 표준비구, 3요소 50% 증비구 및 질소 50% 증비구에서 높은 수량(收量)을 기대할 수 있었으며 세 처리간 유의차는 없었다. 5 목초(牧草)의 생육(生育), 재생(再生) 및 수량(收量)은 3요소 비료중 질소시용에 의해 가장 큰 영향을 받았으며 인산과 칼리비료의 영향은 작았다. 본(本) 시험(試驗)에서 수량(收量)위주로 볼 때 임간초지(林間草地)의 적정시비수준(適正施肥水準)은 자연광조건(自然光條件)의 일반초지(一般草地)와 마찬가지로 표준비($N-P_2O_5-K_2O=28-20-24kg/10a$)시용인 것으로 나타났으나 경제성을 고려할 때 10a당 질소는 $20{\sim}28kg$, 인산 $10{\sim}15kg$, 칼리 $12{\sim}18kg$이 적합하다고 생각된다.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3634-3640
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• 2011

We have performed quantum mechanical calculations to study the geometries and binding energies of biologically important, cyclic hydrogen-bonded complexes, such as formic acid + $H_2O$, formamidine + $H_2O$, formamide + $H_2O$, formic acid dimer, formamidine dimer, formamide dimer, formic acid + formamide, formic acid + formamidine, formamide + formamidine, and barrier heights for the double proton transfer in these complexes. Various ab initio, density functional theory, multilevel methods have been used. Geometries and energies depend very much on the level of theory. In particular, the transition state symmetry of the proton transfer in formamidine dimer varies greatly depending on the level of theory, so very high level of theory must be used to get any reasonable results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• 한국수소및신에너지학회논문집
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• 제17권1호
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.