• Journal of Korean Society for Atmospheric Environment
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• v.9 no.3
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• pp.207-215
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• 1993

In order to statistically predict $O_3$ levels in Seoul, the study used the TMS (telemeted air monitoring system) data from the Department of Environment, which have monitored at 20 sites in 1989 and 1990. Each data in each site was characterized by 6 major criteria pollutants ($SO_2, TSP, CO, NO_2, THC, and O_3$) and 2 meteorological parameters, such as wind speed and wind direction. To select proper variables and to determine each pollutant's behavior, univariate statistical analyses were extensively studied in the beginning, and then various applied statistical techniques like cluster analysis, regression analysis, and expert system have been intensively examined. For the initial study of high level $O_3$ prediction, the raw data set in each site was separated into 2 group based on 60 ppb $O_3$ level. A hierarchical cluster analysis was applied to classify the group based on 60 ppb $O_3$ into small calsses. Each class in each site has its own pattern. Next, multiple regression for each class was repeatedly applied to determine an $O_3$ prediction submodel and to determine outliers in each class based on a certain level of standardized redisual. Thus, a prediction submodel for each homogeneous class could be obtained. The study was extended to model $O_3$ prediction for both on-time basis and 1-hr after basis. Finally, an expect system was used to build a unified classification rule based on examples of the homogenous classes for all of sites. Thus, a concept of high level $O_3$ prediction model was developed for one of $O_3$ alert systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• Korean Journal of Plant Resources
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• v.20 no.4
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• pp.309-311
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• 2007

This study was conducted to select the most suitable fertilizer level on nursery of mat rush for good quality and high yield. $N-P_{2}O_{5}-K_{2}O=60-30-60$ (kg/10a), fertilizer level on nursery of mat rush showed relatively superior values for all yield components and quality with 57g in fresh weight, 12g in dry weight, 23% in air drying ratio for per plant at the nursery and 125cm in stem length, 150 numbers in stem number, 4,082kg/10a in fresh stem yield, 345kg/10a in long stem yield, 996kg/10a in medium stem yield, 1,421kg/l0a in total stem yield, 34% in dry stem ratio and 30% in long stem ratio at the main paddy field. The results indicate that fertilizer level, $N-P_{2}O_{5}-K_{2}O=60-30-60kg/10a$ in nursery shows different adaptabilities to a particular fertilizer level and 60-30-60 (kg/10a) seems to be the most suitable fertilizer level of mat rush for good quality and high yield.

• Journal of the Korean Chemical Society
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• v.42 no.1
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• pp.9-15
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• 1998

The geometrical parameters, vibrational frequencies, and IR intensities of dimethyldioxirane had been investigated using high level ab initio quantum mechanical methods with various basis sets. The polarization function decreases C-O and C-C bond distances significantly and the electron correlation effect increases those bond lengths slightly, while other bond lengths and bond angles are relatively stable for basis set size and correlation effect. The experimental and other theoretical vibrational frequencies and IR intensities of dimethyldioxirane will be compared and discussed with our high level theoretical predictions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

• Journal of muscle and joint health
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• v.23 no.2
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• pp.84-94
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• 2016

Purpose: This research aimed to identify levels of nurses' perception and practice of fluid intake and output (I & O) measurement and to explore the relationship between perception and practice of it. Methods: Using a cross-sectional survey design, 195 nurses who practiced fluid I & O measurement were recruited from a general hospital. Nurses who agreed to participate in this study completed a structured study questionnaire to assess their levels of perception and practice of fluid I & O measurement. Results: A level of perception of I & O measurement was high (3.46 points out of 5), and scores for 3 subdomains of I & O (importance, accuracy, and efficacy) were evenly high. The level of practice of I & O was fairly high (3.76 points out of 5). Perception and practice of I & O were highly correlated (r=.73, p<.001). Conclusion: Nurses seem to have higher levels of perception and do practice fluid I & O measurement correctly. In order to have reliable and valid I & O measures, nurses need to have continuous education on I & O measurement based on clinical guideline to utilize it as an invaluable clinical instrument.

• Journal of Environmental Science International
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• v.11 no.6
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• pp.577-582
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• 2002

Selective catalytic reduction and selective non-catalytic reduction processes are mainly used to treat nitrogen oxidants generated from fossil-fuel combustion. Especially, the selective non-catalytic reduction process can be operated more economical and designed more simply than the selective catalytic reduction. For this reason, many researchers carried out to increase the removal efficiency of nitrogen oxidants in the condition of low oxygen concentration by using the selective non-catalytic reduction process. However, this study was flue gas contained high oxygen concentration of 20(v/v%) with ammonia as a reducing agent. Moreover, it carried out experiment with many factors that are reaction temperature, retention time, initial NO concentration, NSR(normalized stoichiometric ratio). It was determined optimal operating conditions to improve NO removal efficiency with SNCR process. The De-NOx efficiency was increased with NSR, initial NO concentration and retention time increasement. This study has NO removal efficiency over 80% in the high oxygen concentration as well as low oxygen concentration. The injection of reducing agent may be considered for SNCR process and facility operation in 850$\^{C}$ of optimal condition.

• Journal of Microbiology and Biotechnology
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• v.24 no.12
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• pp.1654-1663
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• 2014

To examine the effect of tumor suppressor protein p53 on the antitumor activity of 2-methoxyestradiol (2-MeO-$E_2$), 2-MeO-$E_2$-induced cell cycle changes and apoptotic events were compared between the human colon carcinoma cell lines HCT116 ($p53^{+/+}$) and HCT116 ($p53^{-/-}$). When both cell types were exposed to 2-MeO-$E_2$, a reduction in the cell viability and an enhancement in the proportions of $G_2/M$ cells and apoptotic sub-$G_1$ cells commonly occurred dose-dependently. These 2-MeO-$E_2$-induced cellular changes, except for $G_2/M$ arrest, appeared to be more apparent in the presence of p53. Immunofluorescence microscopic analysis using anti-${\alpha}$-tubulin and anti-lamin B2 antibodies revealed that after 2-MeO-$E_2$ treatment, impaired mitotic spindle network and prometaphase arrest occurred similarly in both cell types. Following 2-MeO-$E_2$ treatment, only HCT116 ($p53^{+/+}$) cells exhibited an enhancement in the levels of p53, p-p53 (Ser-15), $p21^{WAF1/CIP1}$, and Bax; however, the Bak level remained relatively constant in both cell types, and the Bcl-2 level decreased only in HCT116 ($p53^{+/+}$) cells. Additionally, mitochondrial apoptotic events, including the activation of Bak and Bax, loss of ${\Delta}{\psi}m$, activation of caspase-9 and -3, and cleavage of lamin A/C, were more dominantly induced in the presence of p53. The Bak-specific and Bax-specific siRNA approaches confirmed the necessity of both Bak and Bax activations for the 2-MeO-$E_2$-induced apoptosis in HCT116 cells. These results show that among 2-MeO-$E_2$-induced apoptotic events, including prometaphase arrest, up-regulation of Bax level, down-regulation of Bcl-2 level, activation of both Bak and Bax, and mitochondria-dependent caspase activation, the modulation of Bax and Bcl-2 levels is the target of the pro-apoptotic action of p53.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1005-1011
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• 1994

The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.