• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of the Korea Society of Computer and Information
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• v.14 no.12
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• pp.157-167
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• 2009

Recently, the leakage of confidential information and personal information is taking place on the Internet more frequently than ever before. Most of such online security incidents are caused by attacks on vulnerabilities in web applications developed carelessly. It is impossible to detect an attack on a web application with existing firewalls and intrusion detection systems. Besides, the signature-based detection has a limited capability in detecting new threats. Therefore, many researches concerning the method to detect attacks on web applications are employing anomaly-based detection methods that use the web traffic analysis. Much research about anomaly-based detection through the normal web traffic analysis focus on three problems - the method to accurately analyze given web traffic, system performance needed for inspecting application payload of the packet required to detect attack on application layer and the maintenance and costs of lots of network security devices newly installed. The UTM(Unified Threat Management) system, a suggested solution for the problem, had a goal of resolving all of security problems at a time, but is not being widely used due to its low efficiency and high costs. Besides, the web filter that performs one of the functions of the UTM system, can not adequately detect a variety of recent sophisticated attacks on web applications. In order to resolve such problems, studies are being carried out on the web application firewall to introduce a new network security system. As such studies focus on speeding up packet processing by depending on high-priced hardware, the costs to deploy a web application firewall are rising. In addition, the current anomaly-based detection technologies that do not take into account the characteristics of the web application is causing lots of false positives and false negatives. In order to reduce false positives and false negatives, this study suggested a realtime anomaly detection method based on the analysis of the length of parameter value contained in the web client's request. In addition, it designed and suggested a WAF(Web Application Firewall) that can be applied to a low-priced system or legacy system to process application data without the help of an exclusive hardware. Furthermore, it suggested a method to resolve sluggish performance attributed to copying packets into application area for application data processing, Consequently, this study provide to deploy an effective web application firewall at a low cost at the moment when the deployment of an additional security system was considered burdened due to lots of network security systems currently used.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.