• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.431-432
• /
• 2008

HIT Solar Cell은 단결정 실리콘 웨이퍼가 초박막 amorphos 실리콘 층으로 싸여있는 구조이다. HIT Solar Cell에서 amorphos 실리콘의 두께와 도핑 농도는 태양전지의 효율을 결정하는 매우 중요한 요인이다. 본 논문에서는 높은 효율을 갖는 태양전지 설계를 위해 AFORS HET 프로그램을 이용하여 TCO_a-Si:H(p)_a-Si:H(i)_c-Si(n)_Al 구조를 설계했다. 후에 a-Si:H(p)의 두께와 a-Si:H(i) 의 두께를 가변하며 효율을 측정하였고, p-i-n 구조에서 n+ 층을 추가함에 따라 변하는 효율을 측정하였다. 최적화 한 결과 $V_{oc}$ = 693mV, $J_{sc}$ = 3891mA/$cm^{-2}$, FF = 8363%, $E_{ff}$ = 22.55% 의 고효율을 얻었다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.3
• /
• pp.120-125
• /
• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.597-600
• /
• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.230-230
• /
• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.393-393
• /
• 2011

오늘 날 태양전지 산업에서 가장 많은 생산을 하고 있는 분야는 결정질 태양전지분야이다. 현재는 이러한 시대적 요구에 따라 많은 연구가 진행되고 있는데 특히 junction을 이루는 n layer의 doping profile을 선택적으로 형성하여 개방전압 및 단락전류를 향상시키는 연구가 활발히 진행되고 있다. 본 연구는 이러한 n type layer의 doping profile을 선택적으로 형성하는 selective emitter solar cell에 관한 연구로써 SILVACO simulation을 이용하여 low Rs 영역은 고정하고 high Rs 영역의 doping depth를 가변 함으로써 high Rs 영역을 달리 형성하는 방법으로 selective emitter solar cell의 high Rs영역의 최적화에 관한 전산모사를 실시하였다. 각각의 가변조건에 따라 quantum efficiency를 통한 광학적 분석과 I-V를 통한 전기적 분석을 하여 high Rs영역을 최적화 하였다.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.55.1-55.1
• /
• 2011

Dye-sensitized solar cell(DSSC) have been considered one of the promising alternatives to conventional solar cells, because of their low cost, easy fabrication and relatively high energy conversion efficiency. However, although the cell offers reasonable efficiency at least 11%, the use of a liquid electrolyte placed technological challenges for achieving the desired durability and operational stability of the cell. In order to prevent or reduce electrolyte leakage considerable efforts have been made, such as p-type semiconductor or organic hole-transport material that better mechanical properties and simple fabrication processes. In this work, we synthesized solid-state electrolyte containing LiI and KI metal salt with starting materials of poly ethylene oxide to substitute liquid electrolyte enhance the ionic conductivity and solar conversion efficiency. Li+ leads to faster diffusion and higher efficiency and K+ leading to higher ionic conductivity. The efficiency of poly ethylene oxide/LiI system electrolyte is 1.47% and poly ethylene oxide/potassium electrolyte is 1.21%. An efficiency of 3.24% is achieved using solid-state electrolyte containing LiI and KI concentrations. The increased solar conversion efficiency is attributed to decreased crystallinity in the polymer that leads to enhanced charge transfer.

• Applied Science and Convergence Technology
• /
• v.23 no.5
• /
• pp.221-239
• /
• 2014

The global demand for energy has been increasing since past decades. Various technologies have been working to find a suitable alternative for the generation of sustainable energy. Photovoltaic technologies for solar energy conversion represent one of the significant routes for the green and renewable energy production. Despite of remarkable improvement in solar cell technologies, the generation of power is still suffering with lower energy conversion efficiency, high production cost, etc. The major problem in improving the PV efficiency is spectral mismatch between the incident solar spectrum and bandgap of a semiconductor material used in solar cell. Luminescent materials such as rare-earth doped phosphor materials having the quantum efficiency higher than unity can be helpful for photovoltaic applications. Quantum cutting phosphors are the most suitable candidates for the generation of two or more low-energy photons for the absorption of every incident high-energy photons. The phosphors which are capable of converting UV photon to visible and near-IR (NIR) photon are studied primarily for photovoltaic applications. In this review, we will survey various near IR quantum cutting phosphors with respective to their synthesis method, energy transfer mechanism, nature of activator, sensitizer and dopant materials incorporation and energy conversion efficiency considering their applications in photovoltaics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.246-251
• /
• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.426.1-426.1
• /
• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• Current Photovoltaic Research
• /
• v.12 no.3
• /
• pp.61-73
• /
• 2024

All-perovskite tandem solar cells have been developed as a next-generation solar cell technology to surpass the efficiency limits of single-junction solar cells. By using perovskite materials with different bandgaps in the top and bottom cells, these tandem solar cells can effectively utilize a wider range of the solar spectrum. All-perovskite tandem solar cells have been focused as a next-generation solar cell due to their ability to achieve high efficiency while being manufactured through low-cost solution processing. This paper focuses on key components for improving the performance of all-perovskite tandem solar cells and essential components: wide bandgap perovskite solar cells, narrow bandgap perovskite solar cells, and charge recombination layers. The characteristics, main challenges, and strategies for overcoming these issues are discussed. For wide bandgap perovskites, efficiency is reduced by high trap densities and halide ion phase segregation. Improvement methods through additives and surface passivation are proposed to overcome these issues. In narrow bandgap perovskites, composition control and surface treatment techniques are being developed to reduce the oxidation of Sn-based materials and charge recombination in the perovskite. Additionally, the charge recombination layer is an essential component for efficient electron-hole recombination and minimizing optical losses, with materials such as transparent conductive oxides and ultrathin metals being used. These studies make a significant contribution to enhancing the efficiency and stability of all-perovskite tandem solar cells and suggest future research directions for commercialization.