• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• Journal of the Korean Chemical Society
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• v.24 no.4
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• pp.288-294
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• 1980

Methanolysis rate constants were determined for $CH_3O(CO)Cl,\;CH_3S(CO)Cl\;and\;CH_3S(CS)Cl\;in\;CH_3OH-CH_3CN$ mixtures. Results show that the rates are not predominantly influenced by the bulk solvent properties but are partly influenced by specific electrophilic solvation.Polarity of the solvent is not a dominant factor but it nevertheless plays a role in charge stabilization of the $S_N1$ like transition state. The methanolysis proceeds through $S_N1$ mechanism for $CH_3S(CS)Cl$ for which both specific solvation of leaving group by methanol and charge stabilization by a high dielectric medium are important, while for $CH_3O(CO)Cl\;methanolysis occurs\;via\;S_N2$ mechanism in which both of the solvent effects are unimportant.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.938-943
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• 2000

TiCl$_4$, 물 및 1-propanol의 혼합용액으로부터 미립 TiO$_2$분말 제조시, 1-propanol과 물의 부피비, 반응온도, 반응유지시간 및 TiCl$_4$mole 농도에 따른 분말 특성 및 결정상 생성에 대해 조사하였다. 반응온도가 3$0^{\circ}C$ 이상일 때 Ti 수화물의 초기 침전이 생성되었고 반응온도가 TiCl$_4$mole 농도가 증가함에 따라 입자크기는 증가하였고 $600^{\circ}C$ 하소시 1-propanol과 물의 부피비가 2보다 크고 반응온도가 7$0^{\circ}C$보다 낮을 때 주결정상은 anatase였다. 입자크기가 미세하고 입자크기 분포가 좁은 범위를 갖는 조건은 1-propanol과 물의 부피비가 2, 반응온도가 7$0^{\circ}C$, TiCl$_4$mole 농도가 0.2 mole/ι일 때였으며, 결정상의 생성은 1-propanol과 물의 부피비가 2, 반응온도가 3$0^{\circ}C$ 이상일 때 anatase에서 rutile로 전이하는 온도가 높아졌다. 이와 같은 반응인자에 따른 효과는 용매의 유전상수, 티타니아의 용해도, 입자의 표면전위 등의 효과와 관계가 있었다.

• Polymer(Korea)
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• v.35 no.5
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• pp.375-377
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• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.552-554
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• 1999

Phonon scattering and impact ionization models have been presented to analyze hot carrier transport in high energy region, using full band model and Fermi's golden rule. We have investigated temperature dependent properties for impact ionization process of Si using realistic energy band structures at 77K and look. The realistic full band model, obtained from the empirical pseudopotential method with local from factors, is used to calculate scattering rate. The accurate calculation of impact ionization rate requires the use of a wavevector- and frequency-dependent dielectric function ξ ( q,$\omega$). The empirical phonon scattering rate P$\sub$ph/, is given by deriving from linear function for P$\sub$ph/ versus D(E) since the phonon scattering rate is linearly depended on density of states D(E). Impact ionization rate p,, is calculated from the first principle's theory. and fitted by modified Keldysh formula having power of above 2.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.155-166
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• 2016

It is important to configure capacitance(C) of the capacitor and the induction coefficient(L) of the work coil on the resonant circuit design stage in order to induce heating on the object by a precise and constant frequency components in the electromagnetic induction heating equipment. Work coil conducts a direct induction heating according to heating point and area of the object which has a fixed heat factor so that work coil is designed to has fixed value. On the other hands, Capacitor should be designed to be changed in order to be the higher the utilization of the entire equipment. It is extracted the samples by variation of single electrode capacity from the selection stage of raw materials for capacity to the stage of process design for output of the high frequency LC resonance of 700kHz on 1000 VAC maximum voltage and current to $200I_{MAX}$. It is suggested fundamental experiment results in order to prove relation for the optimal design of HF-LC resonance conduction-cooled capacitor based on the response of frequency characteristics and results of output parameters according to variation of the capacitance size.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.