• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.468-468
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• 2011

Carbon nanotubes (CNTs) have been considered as one of the promising candidate for next-generation field emitters because of their unique properties, such as high field enhancement factor, good mechanical strength, and excellent chemical stability. So far, a lot of researchers have been interested in field emission properties of CNT itself. However, it is necessary to study proper field emitter shapes, as well as the fundamental properties of CNTs, to apply CNTs to real devices. For example, specific applications, such as x-ray sources, e-beam sources, and microwave amplifiers, need to get a focused electron beam from the field emitters. If we use planar-typed CNT emitters, it will need several focal lenses to reduce a size of electron beam. On the other hand, the point-typed CNT emitters can be an effective way to get a focused electron beam using a simple technique. Here, we introduce a fabrication of CNT fibers with nanoscale point tips which can be used as a point-typed emitter. The emitter made by the CNT fibers showed very low turn-on electric field, high current density, and large enhancement factor. In addition, it showed stable emission current during long operation period. The high performance of CNT point emitter indicated the potential e-beam source candidate for the applications requiring small electron beam size.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.301-306
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• 2008

Surface composite layers of 1.9~2.9 mm in thickness were fabricated by depositing metamorphic powders on a carbon steel substrate and by irradiating with a high-energy electron beam. In the surface composite layers, 48~64 vol.% of $Cr_{2}B$ or $Cr_{1.65}Fe_{0.35}B_{0.96}$ borides were densely precipitated in the austenite or martensite matrix. These hard borides improved the hardness of the surface composite layer. According to the otentiodynamic polarization test results of the surface composites, coatings, STS304 stainless steel, and carbon steel substrate, the corrosion potential of the surface composite fabricated with 'C+' powders was highest, and its corrosion current density was lowest, while its pitting potential was similar to that of the STS304 steel. This indicated that the overall corrosion resistance of the surface composite fabricated with 'C+' powders was the best among the tested materials. Austenite and martensite phases of the surface composites and coatings was selectively corroded, while borides were retained inside pits. In the coating fabricated with 'C+' powders, the localized corrosion additionally occurred along splat boundaries, and thus the corrosion resistance of the coating was worse than that of the surface composite.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.15-20
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• 2016

The effects of electron beam (EB) irradiation on the superconducting critical temperature ($T_c$) and critical current density ($J_c$) of YBCO films were studied. The YBCO thin films were irradiated using a KAERI EB accelerator with an energy of 0.2 MeV and a dose of $10^{15}-10^{16}e/cm^2$. A small $T_c$ decrease and a broad superconducting transition were observed as the EB dose increased. The value of $J_cs$ (at 20 K, 50 K and 70 K) increased at doses of $7.5{\times}10^{15}$ and $2.2{\times}10^{16}e/cm^2$. However, $J_cs$ decreased as the dose increased further. The X-ray diffraction (XRD) analysis showed that the c axis of YBCO was elongated and the full width at half maximum (FWHM) increased as the dose increased, which is strong evidence of the atomic displacement by EB irradiation. The transmission electron microscopy (TEM) showed that the amorphous layer formed in the vicinity of the surfaces of the irradiated films. The amorphous phase was often present as an isolated form in the interior of the films. In addition to the formation of the amorphous phase, many striations running along the a-b direction of YBCO were observed. The high magnification lattice image showed that the striations were stacking faults. The enhancement of $J_c$ by EB irradiation is likely to be due to the lattice distortion and the formation of defects such as vacancies and stacking faults. The decrease in $J_c$ at a high EB dose is attributed to the extension of the amorphous region of a non-superconducting phase.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.88-98
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• 1997

Welding defects, such as porosity and spike, have sometimes occurred in deep penetration electron beam welds. These defects are known to be one of the serious problem in electron beam welds. So, effects of active parameters ($a_b$) on bead shape and occurrence of defects in electron beam welds of heavy section 9%Ni steel plates were investigated. Partial penetration welding in flat position, and deep penetration welding of 10 ~ 28mm depth were investigated in this study. It is desirable to select low accelerating voltage and above the surface focus position $a_b$$\geq$1.2 at which a wine-cup shaped bead is obtained to avoid the welding defects such as spike and root porosity. When the accelerating voltage of electron beam was low (90kV), active parameter ($a_b$) did not influence on the bead width, penetration depth and weld defects significantly. However, in case of high voltage ($\geq$120kV), active parameter ($a_b$) was sensitively associated with penetraton depth and weld defects, i.e. when the active parameter (($a_b$) was in the range of 0.6 to 1.0, the depth of penetration was always over the target (23mm), while the depth of penetration was dramatically decreased with further increase of active parameter ($a_b$). The weld defects were decreased with the increase of active parameter $a_b$ resulting in the decrease of energy density of the focused beam in the root part of fusion zone.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.743-747
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• 2003

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

• Progress in Medical Physics
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• v.32 no.4
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• pp.165-171
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• 2021

Purpose: This study aimed to evaluate the effect of collimator width on effective atomic number (EAN), relative electron density (RED), and stopping power ratio (SPR) measured by dual-layer dual-energy computed tomography (DL-DECT). Methods: CIRS electron density calibration phantoms with two different arrangements of material plugs were scanned by DL-DECT with two different collimator widths. The first phantom included two dense bone plugs, while the second excluded dense bone plugs. The collimator widths selected were 64 mm×0.625 mm for wider collimators and 16 mm×0.625 mm for narrow collimators. The scanning parameters were 120 kVp, 0.33 second gantry rotation, 3 mm slice thickness, B reconstruction filter, and spectral level 4. An image analysis portal system provided by a computed tomography (CT) manufacturer was used to derive the EAN and RED of the phantoms from the combination of low energy and high energy CT images. The EAN and RED were compared between the images scanned using the two different collimation widths. Results: The CT images with the wider collimation width generated more severe artifacts, particularly with high-density material (i.e., dense bone). RED and EAN for tissues (excluding lung and bones) with the wider collimation width showed significant relative differences compared to the theoretical value (4.5% for RED and 20.6% for EAN), while those with the narrow collimation width were closer to the theoretical value of each material (2.2% for EAN and 2.3% for RED). Scanning with narrow collimation width increased the accuracy of SPR estimation even with high-density bone plugs in the phantom. Conclusions: The effect of CT collimation width on EAN, RED, and SPR measured by DL-DECT was evaluated. In order to improve the accuracy of the measured EAN, RED, and SPR by DL-DECT, CT scanning should be performed using narrow collimation widths.

• Polymer(Korea)
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• v.26 no.1
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• pp.80-87
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• 2002

A comparative study using electron-beam(EB) and thermal curing techniques was carried out to determine the effect of cure behavior and thermal stability of epoxy resins. In this work, benzylquinoxalinium hexafluoroantimonate(BQH) was used as a latent cationic catalyst for an epoxy resin. According to the thermogravimetric analysis(TGA), the decomposed activation energy based on Coats-Redfern method was higher in the case of thermal curing technique. This could be interpreted in terms of slow thermal diffusion rate resulted from high crosslink density of the thermally cured epoxy resin. However, the increase of hydroxyl group in the epoxy resin cured by EB technique was observed in near-infrared spectroscopy(NIRS) measurements, resulting in improving the stable short aromatic chain structure, integral procedural decomposition temperature, and finally ductile properties for high impact strengths.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.407-415
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• 2009

The change of the nitrogen-related centers and the color change of electron beam irradiated type Ia natural diamonds were studied. The irradiation of diamond with high-energy electron beam creates lattice defects which are neutral single vacancy $V^0$. It increased with increasing electron dose density. The B aggregation seems to produce vacancies more easily than the A aggregation, because diamonds with more B aggregation have more platelets, which are sufficient breakable size by electron beam. Greenish blue color of irradiated diamond is changed to darker with increasing electron dose density. GR1 centers with a zero-phonon line at 741 nm and phonon sidebands make transmit visible light at 530 nm and it moves to 500 nm with higher intensity of GR1 centers.