• 제목/요약/키워드: High Xe

검색결과 141건 처리시간 0.029초

Controlled Synthesis of Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition

  • Han, Jaehyun;Lee, Jun-Young;Kwon, Heemin;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.630-630
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    • 2013
  • Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

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ZnO 나노입자의 광전류 특성 (Photocurrent Characteristics of ZnO Nanoparticles)

  • 전진형;성호준;조경아;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.207-207
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    • 2008
  • ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

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단순화된 Pockels cell Q-switch용 구동기 개발 및 특성에 관한 연구 (A study of the development of a simple driver for the Pockels cell Q-switch and Its characteristics)

  • 박구렬;정종한;홍정환;김병균;문동성;김휘영;김희제;조정수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.2116-2118
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    • 2000
  • In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

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Fuzzy Logic PID controller based on FPGA

  • Tipsuwanporn, V.;Runghimmawan, T.;Krongratana, V.;Suesut, T.;Jitnaknan, P.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2003년도 ICCAS
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    • pp.1066-1070
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    • 2003
  • Recently technologies have created new principle and theory but the PID control system remains its popularity as the PID controller contains simple structure, including maintenance and parameter adjustment being so simple. Thus, this paper proposes auto tune PID by fuzzy logic controller based on FPGA which to achieve real time and small size circuit board. The digital PID controller design to consist of analog to digital converter which use chip TDA8763AM/3 (10 bit high-speed low power ADC), digital to analog converter which use two chip DAC08 (8 bit digital to analog converters) and fuzzy logic tune digital PID processor embedded on chip FPGA XC2S50-5tq-144. The digital PID processor was designed by fundamental PID equation which architectures including multiplier, adder, subtracter and some other logic gate. The fuzzy logic tune digital PID was designed by look up table (LUT) method which data storage into ROM refer from trial and error process. The digital PID processor verified behavior by the application program ModelSimXE. The result of simulation when input is units step and vary controller gain ($K_p$, $K_i$ and $K_d$) are similarity with theory of PID and maximum execution time is 150 ns/action at frequency are 30 MHz. The fuzzy logic tune digital PID controller based on FPGA was verified by control model of level control system which can control level into model are correctly and rapidly. Finally, this design use small size circuit board and very faster than computer and microcontroller.

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과학기술위성 3호 탑재를 위한 저전력 홀 추력기 개발 및 시험 (Development and Experiments of the Low Power Hall Thruster for STSAT-3)

  • 이종섭;서미희;선종호;최원호
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 제33회 추계학술대회논문집
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    • pp.298-302
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    • 2009
  • 홀 추력기는 전기추력기의 한 종류로 비교적 간단한 구조와 높은 추력밀도 및 비추력으로 소형위성에 적합하다고 판단되어 주목받고 있으며, 이에 국내에서도 과학기술위성 3호의 핵심기술로 선정되어 자체 개발 중에 있다. 여러 요구조건 분석을 통해 입력전력 300 W, 추력 10 mN, 추력효율 35% 및 비추력 1000 s이 개발목표로 설정되었으며, 이를 만족하는 추력기의 개발을 위해 다양한 구조의 프로토타입 제작 및 실험을 수행하였다. 그 결과 현재까지 약 290 W 입력전력과 0.97 mg/s의 제논 연료유량에서 11 mN의 추력을 37%의 추력효율로 얻는 만족할만한 결과를 얻었다.

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Transparent Conductive Films Composite with Copper Nanoparticle/Graphene Oxide Fabricated by dip Process and Electrospinning

  • 김진운;김경민;김용호;김수용;조수지;이응상;석중현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.382.2-382.2
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    • 2014
  • We explain a method to fabricate multi-layered transparent conductive films (TCF) using graphene oxide (GO), copper powder and polyurethane (PU) solution. The flexible graphene nanosheets (GNSs) serve as nanoscale connection between conductive copper nanoparticles (CuNps) and PU nanofibers, resulting in a highly flexible TCF. To fabricate conductive films with high transmittance, polyurethane (PU) nanofibers were used for a conductive network consisting of CuNps and GNSs (CuNps-GNSs). In this experiment, copper powder and graphene oxides were mixed in deionized water with the ultrasonication for 2 h. NaBH4 solution is used as a reduction agents of CuNps and GNSs (CuNps-GNSs) under a nitrogen atmosphere in the oil bath at 100% for 24 h to mixed. The purified and dispersed CuNp-GNS were obtained in deionized water, and diluted to a 10wt.% based on the contents of GNSs. Polyurethane (PU) nanofibers on a PET substrate were formed by electrospinning method. PET slides coated with the PU nanofibers were immersed into CuNp-GNS solution for several second, rinsed briefly in deionized water, and dried to obtain self-assembled CuNp-GNS/PU films. The morphology of the multi-layered films were characterized with a field emission scanning electron microscope (FE-SEM, Hitachi S-4700) and atomic force microscope (AFM, PSIA XE-100). The electrical property was analysed by the I-V measurement system and the optical property was measured by the UV/VIS spectroscopy.

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SCANNING ELECTRON MICROSCOPY ANALYSIS OF FUEL/MATRIX INTERACTION LAYERS IN HIGHLY-IRRADIATED U-Mo DISPERSION FUEL PLATES WITH Al AND Al-Si ALLOY MATRICES

  • Keiser, Dennis D. Jr.;Jue, Jan-Fong;Miller, Brandon D.;Gan, Jian;Robinson, Adam B.;Medvedev, Pavel;Madden, James;Wachs, Dan;Meyer, Mitch
    • Nuclear Engineering and Technology
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    • 제46권2호
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    • pp.147-158
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    • 2014
  • In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifially, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (~4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

비정질 실리콘 희생층을 이용한 니켈산화막 볼로미터 제작 (Fabrication of Nickel Oxide Film Microbolometer Using Amorphous Silicon Sacrificial Layer)

  • 김지현;방진배;이정희;이용수
    • 센서학회지
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    • 제24권6호
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    • pp.379-384
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    • 2015
  • An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

FISSION PRODUCT AND ACTINIDE RELEASE FROM THE DEBRIS BED TEST PHEBUS FPT4: SYNTHESIS OF THE POST TEST ANALYSES AND OF THE REVAPORISATION TESTING OF THE PLENUM SAMPLES

  • Bottomley P.D.W.;Gregoire A.C.;Carbol P.;Glatz J.P.;Knoche D.;Papaioannou D.;Solatie D.;Van Winckel S.;Gregoire G.;Jacquemain D.
    • Nuclear Engineering and Technology
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    • 제38권2호
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    • pp.163-174
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    • 2006
  • The $Ph{\acute{e}}bus$ FP project is an international reactor safety project. Its main objective is to study the release, transport and retention of fission products in a severe accident of a light water reactor (LWR). The FPT4 test was performed with a fuel debris bed geometry, to look at late phase core degradation and the releases of low volatile fission products and actinides. Post Test Analyses results indicate that releases of noble gases (Xe, Kr) and high-volatile fission products (Cs, I) were nearly complete and comparable to those obtained during $Ph{\acute{e}}bus$ tests performed with a fuel bundle geometry (FPT1, FPT2). Volatile fission products such as Mo, Te, Rb, Sb were released significantly as in previous tests. Ba integral release was greater than that observed during FPT1. Release of Ru was comparable to that observed during FPT1 and FPT2. As in other $Ph{\acute{e}}bus$ tests, the Ru distribution suggests Ru volatilization followed by fast redeposition in the fuelled section. The similar release fraction for all lanthanides and fuel elements suggests the released fuel particles deposited onto the plenum surfaces. A blockage by molten material induced a steam by-pass which may explain some of the low releases. The revaporisation testing under different atmospheres (pure steam, $H_2/N_2$ and steam /$H_2$) and up to $1000^{\circ}C$ was performed on samples from the first upper plenum. These showed high releases of Cs for all the atmospheres tested. However, different kinetics of revaporisation were observed depending on the gas composition and temperature. Besides Cs, significant revaporisations of other elements were observed: e.g. Ag under reducing conditions, Cd and Sn in steam-containing atmospheres. Revaporisation of small amounts of fuel was also observed in pure steam atmosphere.

Aluminum Borate 화합물에 있어서 EU2+이온의 발광성 (A Fundamental Study of Eu2+ Luminescence in Aluminum Borate Compounds)

  • 장기석
    • 대한화학회지
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    • 제44권4호
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    • pp.350-355
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    • 2000
  • 알루미늄 보레이트 화합물, $CaAl_2(BO_3)_2O$$BaAl_2(BO_3)_2O$은 매우 효과적으로 $Eu^{2+}$ 이온의 형광성을 나타내는 발광격자를 가지고 있다. 발광피크는 $Eu^{2+}$:$CaAl_2(BO_3)_2O$화합물에 있어서 450㎚이고 $Eu^{2+}$:$SrAl_2(BO_3)_2O$화합물에 있어서411㎚이며 $Eu^{2+}$:$BaAl_2(BO_3)_2O$ 화합물에 있어서 375㎚이다. 그러므로 $Eu^{2+}$:$CaAl_2(BO_3)_2O$ 화합물은 파란색을 내는 좋은 형광체이며, 특별히, 진공자외선 제논 플라마스 램프에 있어서 우수한 형광물질로 기대된다. $Eu^{2+}$ 이온은 PDP 형광체로써 관심이 높으며, Stokes shift는 형광물질의 도핑격자 크기에 의해서 결정이 된다. Stokes shift는 발광 파장을 결정하는 하나의 중요한 요소이다. 만일, 도핑격자의 크기가작아짐에 따라 $Eu^{2+}$ 이온의 5d 에너지 준위가 낮아지면, 발광 파장은 길어지고 Stokes shift크기는 커진다. 그러므로 결정격자의 크기를 측정하면 $Eu^{2+}$ 이온의 Stokes shift와 5d 에너지 준위 등의 발광성질을 예측할 수 있다.

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