• Clean Technology
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• v.29 no.2
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• pp.126-134
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• 2023

Direct catalytic decomposition is a promising method for controlling the emission of nitrous oxide (N₂O) from the semiconductor and display industries. In this study, a γ-Al₂O₃ catalyst was developed to reduce N₂O emissions by a catalytic decomposition reaction. The γ-Al₂O₃ catalyst was prepared by an extrusion method using boehmite powder, and a N₂O decomposition test was performed using a catalyst reactor that was approximately 25.4 mm (1 in) in diameter packed with approximately 5 mm of catalysts. The N₂O decomposition tests were carried out with approximately 1% N₂O at 550 to 750 ℃, an ambient pressure, and a GHSV=1800-2000 h^-1. To confirm the N₂O decomposition properties and the effect of O₂ and steam on the N₂O decomposition, nitrogen, air, and air and steam were used as atmospheric gases. The catalytic decomposition tests showed that the 1% N₂O had almost completely disappeared at 700 ℃ in an N₂ atmosphere. However, air and steam decreased the conversion rate drastically. The long term stability test carried out under an N₂ atmosphere at 700 ℃ for 350 h showed that the N₂O conversion rate remained very stable, confirming no catalytic activity changes. From the results of the N₂O decomposition tests and long-term stability test, it is expected that the prepared γ-Al₂O₃ catalyst can be used to reduce N₂O emissions from several industries including the semiconductor, display, and nitric acid manufacturing industry.

• Korean Chemical Engineering Research
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• v.47 no.5
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• pp.639-645
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• 2009

In this study, alkanolamine was used to achieve high absorption rates for $CO_2$ as suggested at several literatures. The absorption rates of aqueous AMP and MEA solutions with $CO_2$, $SO_2$, $NO_2$ were measured using a stirredcell reactor. The reaction rate constants were determined from the measured absorption rates. The performances were evaluated under various operating conditions. As a result, the reactions with $SO_2$, $NO_2$ into aqueous AMP and MEA solutions were classified as an instantaneous reaction respectively. The absorption rates increased with increase of the reaction temperature and the concentration of absorbents. The simultaneous absorption rate of $CO_2/SO_2/NO_2$ into 3, 5, 10 wt.% MEA at various pressure of $CO_2/SO_2/NO_2$, was more increased 14~20% than AMP solution. We investigated the effect of $SO_2$ and $NO_2$ on the simultaneous absorption of $CO_2/SO_2/NO_2$ from a flue gas. The performances were evaluated under various operating conditions in order to investigate the absorption characteristic.

• Bulletin of the Korean Chemical Society
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• v.35 no.9
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• pp.2615-2620
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• 2014

Ni/$La_2O_3$ with a high dispersion was prepared by reduction of $La_2O_3$ perovskite oxide to examine the catalytic activity for the $CO_2-CH_4$ reaction. The Ni/$La_2O_3$ catalyst was found to be highly active for the reaction. The ratios of $H_2$/CO were measured in a flow of the reaction mixture containing $CO_2/CH_4$/Ar using an on-line gas chromatography system operated at 1 atm and found to be varied with temperature between 0.66 and 1 in the temperature range of $500-800^{\circ}C$. A kinetic study of the catalytic reaction was performed in a static reactor at 40 Torr total pressure of $CO_2/CH_4/N_2$ by using a photoacoustic spectroscopy technique. The $CO_2$ photoacoustic signal varying with the concentration of $CO_2$ during the catalytic reaction was recorded as a function of time. Rates of $CO_2$ disappearance in the temperature range of $550-700^{\circ}C$ were obtained from the changes in the $CO_2$ photoacoustic signal at early reaction stage. The plot of ln rate vs. 1/T showed linear lines below and above $610^{\circ}C$. Apparent activation energies were determined to be 10.4 kcal/mol in the temperature range of $550-610^{\circ}C$ and 14.6 kcal/mol in the temperature range of $610-700^{\circ}C$. From the initial rates measured at $640^{\circ}C$ under various partial pressures of $CO_2$ and $CH_4$, the reaction orders were determined to be 0.43 with respect to $CO_2$ and 0.33 with respect to $CH_4$. The kinetic results were compared with those reported previously and used to infer a reaction mechanism for the Ni/$La_2O_3$-catalyzed $CO_2-CH_4$ reaction.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.644-651
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• 2011

Storing hydrogen in solid state hydride is one of the best promising methods for the future hydrogen economy. The total performance of such systems depends on the rate at which the amount of mass and heat migration is supplied to solid hydride. Therefore, an accurate modeling of the heat and mass transfer is of prime importance in optimizing the design of such systems. In this work, Hydrogen storage in Pt-CNTs hydrogen reactor has been intensively investigated by solving 2 dimensional mathematical models. Using a CFD computer software, systematic studies have been performed to elucidate the effect of heat and mass transfer during hydrogen charging periods. It was revealed that the optimized design of hydrogen storage vessel can prevent the increase of system temperature and the charging time due to the convective cooling effects inside the vessels at even high charging pressure. Because none has reported the critical issues of heat and mass transfer for CNT based hydrogen storage system, this work can support the first insight of the optimal design for solid state hydrogen storage system based on CNT in the near future.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.370-374
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• 2004

Sr$_{l-x}$Ba$_{x}$Al$_2$O$_4$:Eu (x = 0, 0.1, 0.2, and 0.3 mol) phosphor was synthesized by the hydrothermal method and its properties of photoluminescence and long-afterglow were investigated. The mixtures of Sr(NO$_3$)$_2$, Al(NO$_3$)$_3$9$H_2O$, and Eu(NO$_3$)$_3$$.$6$H_2O$ salts dissolved in distilled water, after controlling their pH by NH$_4$OH solution, put into an Autoclave reactor with high temperature and pressure to react. Such synthesized SrAl$_2$O$_4$:Eu powders showed homogeneous and ultra-fine particles of sub-micron size. In order to have the photoluminescence characteristic, powders were heat treated at 1100 -140$0^{\circ}C$ for 2 h in Ar/H$_2$ reduction atmosphere. Photoluminescence spectra showed a excitation along the wide wavelength of 250 ∼ 450 nm, and broaden emission with maxima peak at 520 nm. Also, it showed a good long afterglow with decaying over 1000 sec after excitation illumination for 10 min. In addition, the microstructure and crystal structure of SrAl$_2$O$_4$:Eu powders were investigated by an SEM and XRD, respectively.

• Journal of the Korean Chemical Society
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• v.37 no.4
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• pp.453-461
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• 1993

Detection method was developed using a simply designed photochemical reactor made of teflon coil and low pressure mercury lamp. This method of UV photolysis of analytes followed by UV, fluorescence and electrochemical detection was found to be useful for four thiocarbamates. Analytes eluting from the column are irradiated with a high flux of 254 nm UV light, so that they change to either fluorescent active forms or highly electrochemically sensitive products. Appling this technique to the UV detection, thiocarbamates were converted into long wavelength absorbing products upon UV irradiation. In fluorescence detector four thiocarbamates are not detected at nonirradiated condition but fluorescence signals of MPTC, CPTC photolysates are appeared after irradiation with UV light. The electrochemical detection for the determination of thiocarbamates was enhanced up to 5∼20 fold signal after UV irradiation, compared to that of the nonirradiated. The detection limit of thiocarbamates on electrochemical detector was 13.3∼0.02 ng under pH 7.0, ionic strength $0.5{\times}10^{-2}$ M, phosphate buffer solution. Adducts produced by reaction of photolysates and OPA-MERC in the reaction coil were monitored at 425 nm with fluorescence detector, and one of the photolysates was primary amine.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.6
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• pp.323-328
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• 2016

Pressurized membrane used for side-stream MBR process requires fouling control strategy both for normal and abnormal operation conditions for stable operation of the facilities. In this study, $85m^3/day$ of pilot-scale side-stream MBR process was constructed for the evaluation of fouling mitigation by air bubble injection into the membrane module. In addition, fouling phenomena at abnormal operation conditions of low influent and/or loading rate were also investigated. Injection of air bubble was found to be effective in delaying transmembrane pressure (TMP) increase mainly due to scouring effect on the membrane surface, resulting in expanded filtration cycle at a high flux of $40L/m^2{\cdot}h$ (LMH). At abnormal operation condition, injection of PACl (53 mg/L as Al) into the bioreactor showed 19% reduction of TMP increase. However, inhibition of nitrifying bacteria by continuous PACl injection was observed from batch experiments. In contrast, injection of powdered activated carbon (PAC, 0.6 g/L) was able to maintain the initial TMP of $0.2kg/cm^2$ for 5 days at the abnormal conditions. It may have been caused from the adsorption of extracellular polymeric substances (EPS), which was known to be excessively released during growth inhibition condition and act as the major foulants in MBR operations.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.