• Journal of Information Display
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• 제11권2호
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• pp.52-56
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• 2010

High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1561-1563
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and tan${\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4},\;2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan${\delta}$ of XLPF/ semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan${\delta}$ was small.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.497-501
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• 2003

In order to manufacture ceramic capacitors for the industrial electronic parts application using Tape casting method, the dielectric properties as a functions of sintering temperatures and the fabrication conditions of green sheet were investigated to consider the possibility of applications. When the mixing ratio of powder and solvent in slurry was 65:35, the uniform and dense green sheets was obtained. The dielectric constant was increased as the sintering temperature Over 94% of relative density and high were obtained to the specimens sintered at $1000^{\circ}C$. We can find that the device sintered at higher temperature than $1000^{\circ}C$ showed the relative density over 94% and the dielectric constant over 2000.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.77-82
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• 2004

본 연구에서는 고유전율(K100) 및 저유전율(K7.8) LTCC(Low Temperature Co-fired Ceramics) 그린 시트를 이종 LTCC 기판으로 동시 소성하는 경우, 고유전율 LTCC 내의 유리 분말 함유량에 따라 발생하는 수축 거동 변화가 이종 LTCC기판의 휨 특성에 미치는 영향에 대하여 평가하였다. 유리 분말 함유량의 증가에 따른 고유전율 LTCC 그린시트의 수축률 및 유전 특성을 측정하였으며, 고유전율/저유전율 비대칭형 적층체의 소결 거동을 고온 현미경을 이용하여 실시간으로 측정하였다. $50\%$ 유리가 첨가된 K100 조성의 경우 수축 개시 온도 및 수축 구간의 범위 , 최종 수축률이 K7.8 조성과 유사하였으며, 동시 소성 시 가장 우수한 휨 특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 한국재료학회지
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• 제3권1호
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• pp.12-18
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• 1993

단결정 실리콘위에 스퍼터법으로 증착된 티타니움막을 급속가열로에서 고상반응에 의해 형성시킨 면저항 1.2 ohm/sq. 내외의 TiS$i_2$ 박막에 있어서 열안정성을 상부절연막의 유무 및 종류에 따라 조사하였다. 상부절연막은 상압 CVD로 증착한 USG(Undoped Silicate Glass, Si$i_2$) 막과 플라즈마 CVD법으로 증착한 PE-SiN(S$i_3$$N_4$)막을 사용했다. 열안정성 평가는 90$0^{\circ}C$에서 시간을 달리하여 TiS$i_2$막, PE-SiN막, USG막의 스트레스는 각각 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$의 인장응력을 나타내었다. 응집현상은 TiS$i_2$의 응집현상은 Nabarro-Herring 마이크로 크리프에 의한 원자의 확산관점에서 검토되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.289-292
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• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• 한국분말재료학회지
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• 제15권4호
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• pp.292-296
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• 2008

The electromagnetic (EM) wave absorption properties of the $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline powder mixed with 5 to 20 vol% of Ni-Zn ferrites has been investigated in a frequency range from 100MHz to 10GHz. Amorphous ribbons prepared by a planar flow casting process were pulverized and milled after annealing at 425 for 1 hour. The powder was mixed with a ferrite powder at various volume ratios to tape-cast into a 1.0mm thick sheet. Results showed that the EM wave absorption sheet with Ni-Zn ferrite powder reduced complex permittivity due to low dielectric constant of ferrite compared with nanocrystalline powder, while that with 5 vol% of ferrite showed relatively higher imaginary part of permeability. The sheet mixed with 5 vol% ferrite powder showed the best electromagnetic wave absorption properties at high frequency ranges, which resulted from the increased imaginary part of permeability due to reduced eddy current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.