• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.135-140
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• 1998

We investigated the initial growth mode of Cu deposited on polyimide at high temperature($350^{\circ}C$) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.761-762
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• 2006

W-Cu alloy was very useful material for a heat sink, high electric contact and EDM electrode. Powder injection molding (PIM) is the optimum manufacturing technology to provide W-Cu components with low-cost and high-volume. We used various compositions of tungsten coated copper powders (W-Cu with 10 to 80 wt-% of copper) to manufacture W-Cu components by PIM. The optimum mixing, injection molding, debinding and sintering conditions to provide the high performance W-Cu components were investigated. The thermal and mechanical properties of W-Cu parts by PIM were measured. Finally, we can verify the high performance of W-Cu components by PIM with the tungsten coated copper.

• Korean Journal of Metals and Materials
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• v.50 no.6
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• pp.419-425
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• 2012

The purpose of this research was to develop a low Ni austenitic cast iron through replacing Ni by Cu and Mn because they are cheaper than Ni. The effect of the Cu content (6-12 wt%) on the microstructure characteristics was investigated in Fe-3%C-16%(Ni+Cu+Mn) cast iron. Contrary to general effect of the Cu on cast iron, the result of the microstructure analysis indicated that bainite and cementite were formed in high Cu content (>8 wt%Cu). A crystallized Cu-solution (Cu-Mn) phase and MnS in the Cu-solution were formed. The quantity of those phases increased as the Cu content increased. Consequently, the high Cu content in the composition ratio (Ni+Cu+Mn=16%) caused the formation of Cu-Mn/MnS and those phases decreased the effect of Cu and Mn on austenite formation. For this reason, bainite and cementite were formed in high Cu content.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Journal of Powder Materials
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• v.7 no.4
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• pp.218-227
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• 2000

It is well known that the Cu-Cr alloys are very difficult to be made by conventional sintering methods. This difficulty originates both from limited solubility of Cr in the Cu matrix and from limited sintering temperature due to high vapor pressures of Cr and Cu components at the high temperature. Densification of Cu-50%Cr Powder compacts by conventional Powder metallurgy Process has been studied. Three kinds of sintering methods were tested in order to obtain high-density sintered compacts. Completely densified Cu-Cr compacts could be obtained neither by solid state sintering method nor by liquid phase sintering method. Both low degree of shrinkage and evolution of large pores in the Cu matrix during the solid state sintering are attributed to the anchoring effect of large Cr particles, which inhibits homogeneous densification of Cu matrix and induces pore generation in the Cu matrix. In addition, the effect of undiffusible gas coming from the reduction of Cu-oxide and Cr-oxide was observed during liquid phase sintering. A two-step sintering method, solid state sintering followed by liquid phase sintering, was proved to have beneficial effect on the fabrication of high-dendsity Cu-Cr sintered compacts. The sintered compacts have properties similar to those of commercial products.

• Journal of Welding and Joining
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• v.32 no.5
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• pp.80-86
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• 2014

We have successfully fabricated high strengthening Cu/STS/Cu 3 layered clad metal of $70kgf/mm^2$ grade for electric device lead frame, and investigated thermal effect of the mechanical and physical properties on the Cu/STS/Cu 3 layered clad metal lead frame material at different temperatures ranging from RT to $200^{\circ}C$. The fabricated clad metal shows a good thermal stability under 6% degrading of mechanical tensile strength and hardness change at $200^{\circ}C$ and also physical properties show stable thermal and electrical conductance of over $220W/m{\cdot}K$ and 58.44% IACS upto the $200^{\circ}$. The results confirm that fabricated high strengthening Cu/STS/Cu 3 layered clad metal can be applied for the high performed electrical lead frame devices.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.399-405
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• 2020

Hollow copper oxide/multi-walled carbon nanotubes (CuO/MWCNT) composites were fabricated via an optimized infiltration-reduction-oxidation method, which is more facile and easy to control. The crystalline structure and morphology were characterized by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The as-prepared CuO/MWCNT composites deliver an initial capacity of 612.3 mAh·g^-1 and with 80% capacity retention (488.2 mAh·g^-1) after 100 cycles at a current rate of 0.2 A·g^-1. The enhanced electrochemical performance is ascribed to the better electrical conductivity of MWCNT, the hollow structure of CuO particles, and the flexible structure of the CuO/MWCNT composites.

• Design & Manufacturing
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• v.6 no.1
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• pp.95-100
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• 2012

In this study, a novel Cu composite sheet with embedded high electric conduction path was developed as another alternative for the interconnect materials possessing high electrical conductivity as well as high strength. The Cu composite sheet was fabricated by forming Ag conduction paths not within the interior but on the surface of a high strength Cu substrate by damascene electroplating process. As a result, the electrical conductivity increased by 40% thanks to mesh type Ag conduction paths, while the ultimate tensile strength decreased by 20%. The interfacial fracture resistance of Cu composite sheet prepared by damascene electroplating increased by above 50 times compared to Cu composite sheet by conventional electroplating. For feasibility test for practical application, a leadframe for LED module was manufactured by a progressive blanking and piercing processes, and the blanked surface profile was evaluated as a function of the volume fraction of Ag conduction paths. As Ag conduction path became finer, pressing formability improved.

• Journal of Powder Materials
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• v.9 no.5
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• pp.329-335
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• 2002

Recently, the fabrication process of the W-Cu nanocomposite powders has been studied to improve the sinterability through the mechanical alloying and reduction of W and Cu oxide mixtures. In this study. the W-Cu composites were produced by mechanochemical process (MCP) using $WO_3-CuO$ mixtures with two different milling types of low and high energy, respectively. These ball-milled mixtures were reduced in $H_2$ atmosphere. The ball-milled and reduced powders were analyzed through XRD, SEM and TEM. The fine W-Cu powder could be obtained by the high energy ball-milling (HM) compared with the large Cu-cored structure powder by the low energy ball-milling (LM). After the HM for 20h, the W grain size of the reduced W-Cu powder was about 20-30 nm.