• Macromolecular Research
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• v.12 no.1
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.370-375
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• 2015

In this study, to confirm the effect of alloying elements on the phase transformation and conditions of the friction stir process, we processed two materials, SS400 and SM45C steels, by a friction stir process (FSP) under various conditions. We analyzed the mechanical properties and microstructure of the friction stir processed zone of SS400 and SM45C steels processed under 400RPM - 100mm/min conditions. We detected no macro (tunnel defect) or micro (void, micro crack) defects in the specimens. The grain refinement in the specimens occurred by dynamic recrystallization and stirring. The microstructure at the friction stir processed zone of the SS400 specimen consisted of an ${\alpha}$-phase. On the other hand, the microstructure at the friction stir processed zone of the SM45 specimen consisted of an ${\alpha}$-phase, $Fe_3C$ and martensite due to a high cooling rate and high carbon content. Furthermore, the hardness and impact absorption energy of the friction stir processed zone were higher than those of base metals. The hardness and impact absorption energy of FSPed SM45C were higher than that of FSPed SS400. Our results confirmed the effect of alloying elements on the phase transformation and mechanical properties of the friction stir processed zone.

• Journal of Powder Materials
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• v.31 no.2
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• pp.152-162
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• 2024

The directed energy deposited (DED) alloys show higher hardness values than the welded alloys due to the finer microstructure following the high cooling rate. However, defects such as microcracks, pores, and the residual stress are remained within the DED alloy. These defects deteriorate the wear behavior so post-processing such as heat treatment and hot isostatic pressing (HIP) are applied to DED alloys to reduce the defects. HIP was chosen in this study because the high pressure and temperature uniformly reduced the defects. The HIP is processed at 1150℃ under 100 MPa for 4 hours. After HIP, microcracks are disappeared and porosity is reduced by 86.9%. Carbides are spherodized due to the interdiffusion of Cr and C between the dendrite and interdendrite region. After HIP, the nanohardness (GPa) of carbides increased from 11.1 to 12, and the Co matrix decreased from 8.8 to 7.9. Vickers hardness (HV) decreased by 18.9 % after HIP. The dislocation density (10^-2/m²) decreased from 7.34 to 0.34 and the residual stress (MPa) changed from tensile 79 to a compressive -246 by HIP. This study indicates that HIP is effective in reducing defects, and the HIP DED Stellite 6 exhibits a higher HV than welded Stellite 6.

• Journal of the Korean Applied Science and Technology
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• v.41 no.1
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• pp.46-57
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• 2024

In this study, the various process conditions for high-power DC Magnetron Sputtering (DCMS) on the surface roughness of carbon thin films were investigated. The optimal conditions for Si/C coating were 40min for deposition time, which does not deviate from normal plasma, to obtain the maximum deposition rate, and the conditions for the best surface roughness were -16volt bias voltage and 400watt DC power with 1.3x10-3torr chamber pressure. Under these optimal conditions, an excellent carbon thin film with a surface roughness of 1.62nm and a thickness of 724nm was obtained. As a result of XPS analysis, it was confirmed that the GLC structure (sp² bonding) was more dominant than the DLC structure (sp³ bonding) in the thin film structure of the carbon composite layer formed by DC sputtering. Except in infrequent cases of relatively plasma instability, the lower bias voltage and applied power induces smaller surface roughness value due to the cooling effect and particle densification. For the optimal conditions for Graphite/C composite layer coating, a roughness of 36.3 nm and a thickness of 711 nm was obtained under the same conditions of the optimal process conditions for Si/C coating. This layer showed a immensely low roughness value compared to the roughness of bare graphite of 242 nm which verifies that carbon coating using DC sputtering is highly effective in modifying the surface of graphite molds for glass forming.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Analytical Science and Technology
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• v.15 no.6
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• pp.514-520
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• 2002

The electrothermal vaporization (ETV) hollow cathode glow discharge atomic emission spectrometer for analysis of liquid sample has been developed and characterized. This system has improved the sample introduction method of electrothermal vaporization and the hollow cathode glow discharge. The sample introduction method was possible to provide high analyte transport efficiency to the plasma by helix coil made of tungsten material. In addition, small volume samples (<$30{\mu}{\ell}$) could be used. The system has glow discharge cell with special design for improvement of precision. The effect of discharge parameters such as discharge power, gas flow rate has been studied to find optimum condition. The emitted light was effectively carried into detector by fiber optic cable in UV region. The calibration curve of Pb, Cd were obtained with 3 samples.

• Journal of Energy Engineering
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• v.11 no.1
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• pp.1-9
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• 2002

The purpose of this study is to maintain high efficiency and reasonable use of cool thermal storage systems operated in the domestic building sector. As the result of efficiency test from the five types of operated cool storage systems on the condition that COP ranges are 2.6 to 3.4 during the day time and 2.1 to 3.0 during the night time and it decreased by more than 30% of rated COP given 3.8 to 3.0. The Analysis of cool storage rate shows that only 3 (21.4%) systems out of 15 buildings hold to over 40% capacity for its total capacity. To prevent the decrease in operating efficiency, it should correct the malfunction of 3-way valve and expansion valve and the mistake of control values for schedule program and increase cooling tower capacity. In order to improve piping line, it needs bypass brine line off refrigerator, separation of chilled water line with Ice Slurry system at day and night time and speed control of chilled and warm water pumps. This study does require the more studies on improving difficulty of increasing cooling load with Ice on Coil system, waterproofing with Ice Ball system, COP drop during the night time with Ice Lens, low operating temperature during the day time with Ice Slurry and increasing of Power loss due to hot gas de-icing with Ice Harvest in the future.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.25-29
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• 2022

Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.

• Journal of the Korea Concrete Institute
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• v.29 no.2
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• pp.141-148
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• 2017

This study is experimentally investigated the effects of various steam curing parameters on the early-age compressive strength development of high strength concrete (over 40 MPa) in the precast plant production. High strength concrete are used only ordinary portland cement (type I) and water-cement ratio selected 3cases (25%, 35% and 45%). Also, steam curing parameters are as followings ; (1) Preset period 2cases (3 hours and 6 hours) (2) Maximum curing temperature 3cases ($45^{\circ}C$, $55^{\circ}C$ and $65^{\circ}C$) (3) Maintenance time of curing temperature 3cases (4 hours, 6 hours and 8 hours) (4) Maximum rate of heating and cooling $15^{\circ}C$/hr. Initial setting time and adiabatic temperature rising ratio of these concrete according to water-cement ratio are tested before main tests and examined the compressive strength development for the steam curing parameters. Also compressive strength are compared with optimum steam curing condition and standard curing at test ages. As test results, the optimum steam curing conditions for high strength concrete(over 40 MPa) are as followings. (1) Preset period ; over initial setting time of concrete (2) Maximum curing temperature ; bellow $55^{\circ}C$ (3) Maintenance time of curing temperature ; bellow 6hours. Also strength development of steam curing concrete show in the reversed strength at 28 days. It is to propose an efficient steam curing condition for high strength concrete in the precast method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.