• Title/Summary/Keyword: Hexa-aluminate

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Catalytic Decomposition of SF6 from Semiconductor Manufacturing Process (촉매를 이용한 반도체 공정 SF6 처리에 관한 연구)

  • Hwang, Cheol-Won;Choi, Kum-Chan
    • Journal of Environmental Science International
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    • v.22 no.8
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    • pp.1019-1027
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    • 2013
  • Sulfur hexa-fluoride has been used as a etching gas in semiconductor industry. From the globally environmental issues, it is urgent to control the emissions of this significant greenhouse gas. The main objective of this experimental investigation was to find the effective catalyst for $SF_6$ decomposition. The precursor catalyst of hexa-aluminate was prepared to investigate the catalytic activity and stability. The precursor catalyst of hexa-aluminate was modified with Ni to enhance the catalytic activities and stability. The catalytic activity for $SF_6$ decomposition increased by the addition of Ni and maximized at 6wt% addition of Ni. The addition of 6wt% Ni in precursor catalyst of hexa-aluminate improved the resistant to the HF and reduced the crystallization and phase transition of catalyst.

Synthesis of Gamma Aluina Powder for Catalytic Support from Kaolin (카올린으로부터 촉매담체용 감마알루미나 분말의 합성)

  • Kang, H.K.;Park, H.C.;Choi, I.S.;Lee, H.;Son, M.M.
    • Korean Journal of Materials Research
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    • v.6 no.9
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    • pp.943-949
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    • 1996
  • 카올린에서 추출된 황산알루미늄 용액으로부터 촉매담체용 r-AI2O3분말 합성에 대하여 연구하였다. 황산알루미늄 용액을 교반중의 에탄올(ethanol)에 적하하여 단일상(single phase)의 AI2(So4)3 18H2O석출물을 제조하고 이 석출물의 하소로부터 r-AI2O3분말을 합성하였다. 이 분말을 100$0^{\circ}C$에서 2시간 하소하였을 때 열적안정성을 보였으나, 120$0^{\circ}C$-2시간 하소에서 $\alpha$-AI2O3 로 전이하였다. r-AI2O3의 열적안정성에 미치는 BaO 첨가의 영향을 조사 연구하였다. 첨가량은 r-AI2O3에 대해서 1.0-6.0wt%로 하였다. BaO를 4.0wt%첨가한 시료는 AI2O3-BaO.6AI2O3(hexa-aluminate)혼합상생성으로 인하여 120$0^{\circ}C$에서 r-AI2O3의 전이를 방지하는데 효과적이었다. BaO를 4.0wt%첨가한 시료와 BaO를 첨가하지 않은 시료에 대하여 r-AI2O3$\longrightarrow$ $\alpha$-AI2O3전이에 따른 비표면적을 조사하여 보았다. 120$0^{\circ}C$-2시간에서 BaO 4.0wt% 첨가한 시료와 BaO를 첨가하지 않은 시료의 비표면적은 각각 95$m^2$/g과 50$m^2$/g을 유지하였다.

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Photoluminescence properties of $SrAl_{12}O_{19}:Mn^{4+}$ red phosphor depending on Mn concentration and fluxes ($SrAl_{12}O_{19}:Mn^{4+}$ 적색 형광체의 플럭스와 Mn 농도에 따른 영향 및 발광특성)

  • Park, W.J.;Jung, M.K.;Moon, J.W.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.4
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    • pp.156-159
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    • 2007
  • The red emission properties of $Mn^{4+}$ doped $SrAl_{12}O_{19}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum exhibits a narrow band between $600{\sim}700 nm $ with four sharp peaks occurring at about 643, 656, 666, 671 nm due to the $^2E\to^4A_2$ transition of $Mn^{4+}$. The excitation spectrum exhibits a broad band between $200{\sim}500 nm$ with three peaks occurring at about 338, 398 and 468 nm, respectively. Moreover, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ with or without $CaF_2$ and MgO fluxes measured at excitation source 390 nm. The relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67mol% MgO was approximately 30% higher than that of the base composition sample. Strontium hexa-aluminate measured at room temperature as a function of the substituted Mg concentration. MgO was added to replace part of the $Al_2O_3$. Also, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67 mol% MgO and 0.67 mol% $CaF_2$ was approximately about 48% higher than that of the base composition $SrAl_{12}O_{19}:Mn^{4+}$.