• 제목/요약/키워드: Heterojunction structure

검색결과 131건 처리시간 0.033초

PHOTOSENSITIVITY OF HETEROJUNCTION TYPE GRAINS IN CUBIC SILVER HALIDE MICROCRYSTALS

  • Park, In Yeong
    • Journal of Photoscience
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    • 제3권3호
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    • pp.159-161
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    • 1996
  • Photosensitivity of silver halide emulsion depends on the properties of the microcrystals. Size, shape, grain distribution and chemical composition as well as the inner structure or the topography of the latent image specks affect on the optical properties and play an important role in the photographic process. In the present paper, a study on the sensitization of emulsion containing AgBrClI core/shell grains showed that for the given size, shape, halide content and crystal habit, under the optimal conditions the photosensitivity of the heterojunction type grains are different from that of the common regular grains. The optimal photosensitivity was obtained at the iodide content of 2.0 mo1%.

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The Interfacial Electronic Structure of Organic-organic Heterojunction: Effect of Molecular Orientation

  • 조상완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.114.2-114.2
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    • 2014
  • The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

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Heterojunction of FeOOH and TiO2 for the Formation of Visible Light Photocatalyst

  • Rawal, Sher Bahadur;Chakraborty, Ashok Kumar;Lee, Wan-In
    • Bulletin of the Korean Chemical Society
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    • 제30권11호
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    • pp.2613-2616
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    • 2009
  • FeOOH/$TiO_2$, a heterojunction structure between FeOOH and $TiO_2$, was prepared by covering the surface of the $\sim$100-nm-sized FeOOH particles with Degussa P25 by applying maleic acid as an organic linker. Under visible light irradiation (${\lambda}{\geq}$ 420 nm), FeOOH/$TiO_2$ showed a notable photocatalytic activity in removal of gaseous 2-propanol and evolution of $CO_2$. It was found that FeOOH reveals a profound absorption in the spectral range of 400 - 550 nm, and its valence band (VB) level is located relatively lower than that of $TiO_2$. The considerable photocatalytic efficiency of the FeOOH/$TiO_2$ under visible light irradiation was therefore deduced to be caused by the hole transfer between the VB of FeOOH and $TiO_2$.

Synthesis and Characterization of TiO2/CuS Nanocomposite Fibers as a Visible Light-Driven Photocatalyst

  • An, HyeLan;Kang, Leeseung;Ahn, Hyo-Jin;Choa, Yong-Ho;Lee, Chan Gi
    • 한국세라믹학회지
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    • 제55권3호
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    • pp.267-274
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    • 2018
  • $TiO_2/CuS$ nanocomposites were fabricated by precipitation of nanosized CuS via sonochemical method on electrospun $TiO_2$ nanofibers, and their structure, chemical bonding states, optical properties, and photocatalytic activity were investigated. In the $TiO_2/CuS$ nanocomposite, the position of the conduction band for CuS was at a more negative than that of TiO; meanwhile, the position of the valence band for CuS was more positive than those for TiO, indicating a heterojunction structure belonging to type-II band alignment. Photocatalytic activity, measured by decomposition of methylene blue under visible-light irradiation (${\lambda}$ > 400 nm) for the $TiO_2/CuS$ nanocomposite, showed a value of 85.94% at 653 nm, which represented an improvement of 52% compared to that for single $TiO_2$ nanofiber (44.97% at 653 nm). Consequently, the photocatalyst with $TiO_2/CuS$ nanocomposite had excellent photocatalytic activity for methylene blue under visible-light irradiation, which could be explained by the formation of a heterojunction structure and improvement of the surface reaction by increase in surface area.

Nanodome-patterned Transparent Conductor for Highly Responsive Photoelectric Device

  • 홍승혁;윤주형;박형호;강길모;서철원;김준동
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.458.1-458.1
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    • 2014
  • An effective light-managing structure has been achieved by using a nano-imprint method. A transparent conductor of indium-tin-oxide (ITO) was periodically nanodome-shaped to have a height of 200 nm with a diameter of 340 nm on a p-type Si substrate. This spontaneously formed a heterojunction between the ITO layer and Si substrate and effectively reduced the light-reflection. The ITO nanodome device response was significantly enhanced to 6010 from the value of 72.9 of a planar ITO film. The transparent conducting ITO nanodome structure efficiently manipulates the incident light driving into the light-absorber and can be applied in various photoelectric applications.

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The Fabrication and Characterization of the Photovoltaic Cells Composed of Polydiacetylene and Fullerene

  • Song Jeong-Ho;Kang Tae-Jo;Cho Young-Don;Lee Sun-Hyoung;Kim Jeong-Soo
    • Fibers and Polymers
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    • 제7권3호
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    • pp.217-222
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    • 2006
  • Propargyl alcohol was coupled to 2,4-hexadiyne-1,6-diol (HDD) and crystallized in the process of ultraviolet irradiation-induced topochemical polymerization. The HDD polymer crystals were used as one component in the fabrication of organic photovoltaic cells, in combination with fullerene as the electron acceptor. The various structures of the produced photovoltaic cells included bilayer, trilayer, and bulk heterojunction structures. Their photovoltaic properties were analyzed in relation to crystal structure, electrochemical properties, and band structure of the HOD polydiacetylene polymers.

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

  • Sim, Hana;Lee, Jeongmin;Cho, Seongjae;Cho, Eou-Sik;Kwon, Sang Jik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권2호
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    • pp.267-275
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    • 2015
  • In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

일산화질소 가스 검출을 위한 CuO 박막/ZnO 나노막대 이종접합 구조의 제작 및 특성 평가 (Fabrication and Characterization of CuO Thin Film/ZnO Nanorods Heterojunction Structure for Efficient Detection of NO Gas)

  • 유환수;김효진;김도진
    • 한국재료학회지
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    • 제28권1호
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    • pp.32-37
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    • 2018
  • We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

Initial Growth Mode and Nanostructure of Bulk Heterojunction Layers in Planar Type Metal Pthanlocyanine Molecules

  • Kim, Hyo-Jung;Kima, Ji-Whan;Lee, Hyun-Hwi;Lee, Byeon-Du;Kim, Jang-Joo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.162-162
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    • 2012
  • ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation. The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime. The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the different nanostructure in the mixed layer with C60 to form the bulk heterojunction.

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분극 엔지니어링을 통한 상시불통형 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 설계 (Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering)

  • 차호영;성혁기
    • 한국정보통신학회논문지
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    • 제16권12호
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    • pp.2741-2746
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    • 2012
  • 본 연구에서는 기존의 질화알루미늄갈륨/질화갈륨 이종접합 구조에서 강한 분극현상으로 인하여 구현하기 어려웠던 상시불통형 소자를 질화알루미늄갈륨 기판 혹은 버퍼층을 이용하여 구현하는 방법을 제안한다. 질화알루미늄갈륨 기판 혹은 버퍼층 위에 더 높은 Al 몰분율을 갖는 장벽층을 성장하고 최상부에 질화갈륨 층을 추가 성장하여 분극전하를 상쇄시키는 방법을 이용하여 선택적으로 게이트 아래의 채널만 공핍시켜 상시불통형 소자를 구현할 수 있다. 이를 통하여 본 연구에서는 상용 전력소자에서 요구하는 게이트 문턱전압 2 V 이상을 갖는 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 에피구조를 제안한다.