• 제목/요약/키워드: Heterojunction solar cell

검색결과 152건 처리시간 0.032초

Fabrication and Characterization of Electro-photonic Performance of Nanopatterned Organic Optoelectronics

  • 닐리쉬;한지영;권현근;이규태;고두현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.134.2-134.2
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    • 2014
  • Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

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Se 태양전지(太陽電池)의 고효율화(高效率化)에 관한 연구(硏究) (High-Efficiency ITO/Se Solar Cells)

  • 김태성
    • 태양에너지
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    • 제7권2호
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    • pp.7-13
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    • 1987
  • Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

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CBD법으로 제작된 CdS 박막의 thiourea/CdAc2 농도비에 따른 특성 (Properties of CdS Thin Films Prepared by Chemical Bath Deposition as a Function of Thiourea/CdAc2 Ratio in Solution)

  • 송우창
    • 한국표면공학회지
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    • 제41권1호
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    • pp.28-32
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    • 2008
  • In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

IR 레이저 스크라이빙에 의한 HJT 셀 분할 시 출력 감소율 최소화에 대한 연구 (Research on Minimizing Output Degradation in HJT Cell Separation Using IR Laser Scribing)

  • 이은비;윤성민;김민섭;신진호;김유진;김정훈;박민준;정채환
    • Current Photovoltaic Research
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    • 제12권2호
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    • pp.37-40
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    • 2024
  • One of the current innovation trends in the solar industry is the increase in the size of silicon wafers. As the wafer size increases, the series resistance of the module rises, highlighting the need for research on methods for cutting and bonding solar cells. Among these, the Infrared (IR) laser scribing technique has been extensively researched. However, there is still insufficient optimization research regarding the thermal damage caused by lasers on the Transparent Conductive Oxide (TCO) layer of Heterojunction (HJT) solar cells. Therefore, in this study, we systematically varied conditions such as IR laser scribing speed, frequency, power, and the number of scribes to investigate their impact on the performance of cut cells under each condition. Additionally, we conducted a comparative analysis of thermal damage effects on the TCO layer based on varying scribing depths.

Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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Dynamic Response of Charge Recombination from Post-Annealing Process in Organic Solar Cell Using Intensity Modulated Photovoltage Spectroscopy

  • Jeong, Hanbin;Yun, Suk-Jin;Lee, Jae Kwan
    • 통합자연과학논문집
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    • 제9권4호
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    • pp.275-280
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    • 2016
  • Intensity modulated photovoltage spectroscopy (IMVS) analysis of organic solar cells (OSCs) with a bulk-heterojunction (BHJ) film composed of P3HT and $PC_{61}BM$ was performed. The dynamic response of charge recombination by the post-annealing approach in $P3HT/PC_{61}BM$ BHJ solar cells characterized by IMVS demonstrated that post-annealing reduced the recombination of electron carriers in the device. The recombination times of $P3HT/PC_{61}BM$ BHJ solar cells post-annealed at room temperature, 80, 120, and $140^{\circ}C$ were 0.009, 0.020, 0.024, and 0.030 ms, respectively, at a short-circuit current of 0.18 mA. The results indicated that the IMVS analysis can be effectively used as powerful.

Characteristics of Polymer Solar Cells Depending on the Thickness of Active Layer

  • Lee, Dong-Gu;Noh, Seung-Uk;Suman, C.K.;Kim, Jun-Young;Lee, Seong-Hoon;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1204-1207
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    • 2009
  • We investigated the device performance of bulk heterojunction solar cells depending on the active layer thickness. For the systematic comparison, the polymer solar cells comprising RR-P3HT:PCBM (1:0.8 (wt%:wt%)) blend films with different thickness were characterized by impedance spectroscopy, and J-V measurement in dark and solar simulated illumination. The device with 120 nm thickness of active layer exhibited maximum power conversion efficiency of 3.5 % under AM 1.5 100mW/$cm^2$ illumination condition.

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CdS/(P)Si 이종접합 태양전지에 관한연구 (A Study on the Cd S/(p) Si heterojunction Solar Cell)

  • 전춘생;전창식;윤문수;허창수
    • 대한전기학회논문지
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    • 제37권2호
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    • pp.96-101
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    • 1988
  • This work is concerned with the fabrication process and photo-response characteristics of Cd S/(p) Si solar cells. In order to fabricate the cell. low grade Si wafer has been used as an absorber and Cd S which works as a window material has been prepared by vacuum evaporation. Cd S thin film, as evaporated, is polycristal and resistance is very high but these properties are improved by annealing. The properties of the fabricated cells are found to depend largely on the transmittance of Cd S. The effects of Cd S thickness and annealing condition on the fill factor and efficiency of the cell are investigated quantitatively.

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Performances and Electrical Properties of Vertically Aligned Nanorod Perovskite Solar Cell

  • Kwon, Hyeok-Chan;Kim, Areum;Lee, Hongseuk;Lee, Eunsong;Ma, Sunihl;Lee, Yung;Moon, Jooho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.429-429
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    • 2016
  • Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

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All Solution processed BiVO4/WO3/SnO2 Heterojunction Photoanode for Enhanced Photoelectrochemical Water Splitting

  • Baek, Ji Hyun;Lee, Dong Geon;Jin, Young Un;Han, Man Hyung;Kim, Won Bin;Cho, In Sun;Jung, Hyun Suk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.417-417
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    • 2016
  • Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

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