• 한국광학회지
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• 제4권3호
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• pp.294-300
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• 1993

표면광 마이크로 레잊, heterojunction phototransistor 그리고 저항을 단일 결정으로 성장시켜 집적시킨 NOR와 INVERTER 능동형 광 논리 소자에 대한 동작 특성을 조사하였다. 능동형 광 놀리 소자를 구성하는 개개 소자 중에서, 780 nm에서 발진하는 특정한 AlGaAs 초격자 마이크로 레이저의 미분 양자 효율은 15%로 나타났고, heterojunction phototransistor의 전류 이득은 에미터-컬렉터 전압이 4V이고, 입력 광의 세기가 $50{\mu}W$일 때 57으로 측정되었다. 직렬 저항이 370 ohm인 광 논리 소자의 출력은 입력광세기사 $47{\mu}W$일 때 $57{\mu}W$에서 $0{\mu}W$으로 감소하였다.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.268-272
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• 2007

A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.